Diodes Incorporated BSS84TA

Overview

BSS84TA from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT23 package, rated for -50V V_DSS, 10Ω R_DS(ON) @ V_GS = -5V, and -130mA continuous drain current. It delivers low gate threshold voltage (-0.8 to -2.0V), fast switching, and low input capacitance (C_iss = 24.6–45pF), enabling efficient power management in space-constrained analog and digital interface circuits.

For engineers reviewing the BSS84TA datasheet, BSS84TA pinout, BSS84TA application, or BSS84TA equivalent, key selection criteria include verified R_DS(ON) at low gate drive, thermal resistance (R_θJA = 417°C/W), leakage performance (I_DSS ≤ -2µA @ +125°C), and JEDEC-qualified reliability for industrial and automotive-adjacent designs.

Technical Context

This MOSFET operates in enhancement mode with negative gate control logic, requiring V_GS ≤ -0.8V to initiate conduction and fully turning on near -5V. Its low C_iss/C_oss ratio (24.6pF / 4.7pF) supports high-frequency switching up to several MHz in load-switching and signal-gating roles.

The device uses planar DMOS technology with optimized channel geometry to balance R_DS(ON) and gate charge (Q_g = 0.28nC @ V_GS = -4.5V). Thermal derating follows a defined curve: power dissipation drops linearly from 300mW at 25°C to zero at ~150°C ambient, per Figure 1.

Key Specifications

Pinout & Package

Package: SOT23 (Standard), 3-terminal surface-mount plastic package with matte tin finish, UL 94V-0 rating, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMN2053LW-7 and SI2301DDS-T1-GE3, BSS84TA offers superior -50V blocking headroom and lowest gate charge among the three, making it optimal for mixed-voltage industrial interfaces where reliability and low drive energy matter more than peak current capability.

Availability

BSS84TA is available at Aetrix Electronics and suitable for USB power switching, microcontroller I/O translation, low-power sensor bias control, and LED current sink switching requiring stable component supply across industrial, medical, and consumer electronics programs.

Supply support for BSS84TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The BSS84TA belongs to Diodes' general-purpose MOSFET product line, engineered for compact, high-reliability signal and power switching in space-constrained embedded systems where low gate drive, predictable threshold, and JEDEC-qualified robustness are essential.

FAQ

What is the maximum safe operating temperature for BSS84TA?

The BSS84TA has a specified junction temperature range of -55°C to +150°C. Its thermal resistance is 417°C/W on standard FR-4 PCB, so at 300mW max power dissipation, junction temperature rises 125°C above ambient. To stay within 150°C T_J, ambient must remain ≤25°C at full power - derating is required above that point per Figure 1.

Can BSS84TA be used with 3.3V GPIO without level shifting?

Yes. With a gate threshold voltage range of -0.8V to -2.0V, BSS84TA reliably turns on when driven by a 3.3V MCU GPIO pulling the gate to 0V (i.e., V_GS = -3.3V). At that drive, R_DS(ON) is typically ≤5Ω, supporting up to ~65mA with <325mV drop - sufficient for most logic-level switching tasks.

Is BSS84TA suitable for automotive applications?

The standard BSS84TA is not AEC-Q200 qualified, but Diodes offers the automotive-grade BSS84Q variant, which shares identical electrical specs and is qualified to AEC-Q101. For production automotive use, BSS84Q must be specified; BSS84TA is appropriate for industrial, medical, and consumer applications meeting JEDEC reliability standards.

How does BSS84TA's leakage compare at elevated temperatures?

At +25°C, I_DSS is guaranteed ≤-1µA; at +125°C, it increases to ≤-2µA. This is confirmed in the Electrical Characteristics table (Note 7). The device maintains sub-µA leakage up to 100°C, making it suitable for battery-powered systems where off-state current must remain below 1µA across operating temperature ranges.