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Diodes Incorporated BSS84W-7

Part No.:
BSS84W-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixBSS84W-7.pdf
Description:
MOSFET P-CH 50V 130MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,902

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Product details

Overview

BSS84W-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT323 package, rated for -50V VDSS, 10Ω RDS(ON) at VGS = -5V, and -130mA continuous drain current. It delivers low gate threshold voltage (-0.8V to -2.0V), fast switching (tD(ON) = 10ns), and low input capacitance (Ciss = 45pF), making it suitable for compact power-management and analog switching circuits in space-constrained portable electronics.

For engineers reviewing the BSS84W-7 datasheet, BSS84W-7 pinout, BSS84W-7 application, or BSS84W-7 equivalent, key selection criteria include verified P-channel logic-level drive capability, thermal resistance (RθJA = 625°C/W), JEDEC-qualified reliability, RoHS-compliant lead-free plating, and SOT323 footprint compatibility with high-density PCB layouts.

Technical Context

This MOSFET operates in enhancement mode with negative gate control, requiring VGS ≤ -0.8V to initiate conduction and fully enhancing at VGS = -5V. Its low RDS(ON) and sub-2V VGS(TH) enable direct interfacing with 3.3V and 5V logic outputs without level-shifting.

Designed for discrete load switching rather than synchronous rectification, it features guaranteed dynamic parameters (Ciss, Coss, Crss) and switching times under defined test conditions (VDD = -30V, RGEN = 50Ω), with thermal derating defined per Fig. 1 up to +150°C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-50V - supports blocking of common negative-rail supply voltages in battery-powered systems
RDS(ON)10Ω @ VGS = -5V - enables <13mW conduction loss at -130mA, critical for low-power standby operation
VGS(TH)-0.8V to -2.0V - ensures turn-on with standard 3.3V microcontroller GPIOs driving gate through pull-up
Ciss45pF - limits gate drive current demand and improves EMI performance in high-frequency switching
tD(ON)10ns - supports >10MHz digital switching in signal routing and power gating applications
PD200mW @ TA = +25°C - defines maximum steady-state dissipation on FR-4 PCB without heatsinking
RθJA625°C/W - quantifies thermal bottleneck from junction to ambient; requires layout-aware copper pour for >100mW use

Pinout & Package

Package: SOT323 - surface-mount plastic package measuring 2.00 × 2.225 × 0.90 mm (L × W × H), UL 94V-0 rated, moisture sensitivity level 1, with matte tin-plated Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
Source (S)Reference node for gate control and current return pathConnected to higher potential rail (e.g., VCC or battery +) in high-side switch configuration
Gate (G)Control electrode modulating channel conductivityRequires negative voltage relative to source to conduct; driven by open-drain or inverted logic
Drain (D)Current output terminal delivering switched load currentConnected to load (e.g., LED anode, sensor supply, or logic input) referenced to ground or lower potential

Key Features

FeatureDesign Value
Low RDS(ON) at logic-level drive6Ω typical at VGS = -5V - reduces I²R losses in always-on bias networks and battery disconnect paths
Low gate threshold voltageVGS(TH) down to -0.8V - allows reliable turn-on with weak pull-down drivers or partial-voltage gate control
Fast switching speedtD(OFF) = 18ns - minimizes transition time in PWM-controlled analog switches and power sequencing
JEDEC-qualified reliabilityQualified per AEC-Q standards - validated for extended temperature cycling and humidity exposure in industrial environments
Green, halogen-free construction<900ppm Br/Cl, <1000ppm Sb - meets automotive and medical regulatory requirements for material content compliance

Applications

Portable Power SwitchingLogic-Level Signal Routing

Use Scenario: Enabling/disabling power to Bluetooth LE modules or PMIC rails in wearables during sleep mode.

IC Role / Device Role / Timing Role: High-side load switch controlling VBAT delivery to subsystems with minimal quiescent current.

Use Value: Achieves <1µA off-state leakage (IDSS ≤ -1µA at TJ = +25°C), extending battery life beyond 6 months in deep-sleep cycles.

Use Scenario: Isolating I²C bus segments between MCU and sensor clusters to prevent address conflicts.

IC Role / Device Role / Timing Role: Bidirectional analog switch enabling signal pass-through only when gate is actively pulled low.

Use Value: Input capacitance (Ciss = 45pF) and low RDS(ON) preserve rise/fall times below 300ns at 400kHz clock rates.

Automotive Body ControlIndustrial Sensor Interface

Use Scenario: Driving small solenoids or LED indicators in door module ECUs where 12V system voltage must be switched with 3.3V MCU outputs.

IC Role / Device Role / Timing Role: Logic-compatible P-channel switch replacing discrete transistor+resistor solutions.

Use Value: VGS(TH) ≤ -2.0V ensures full enhancement even with MCU VOH degradation over temperature and voltage tolerance.

Use Scenario: Multiplexing analog sensor outputs (e.g., thermistors, RTDs) into a shared ADC channel in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-leakage analog switch maintaining signal integrity across 0–100°C operating range.

Use Value: IDSS ≤ -100nA at TJ = +125°C prevents measurable offset error (<10µV) in 16-bit measurement chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2041L-7RDS(ON) = 4.5Ω @ VGS = -4.5V; SOT23 package; higher ID rating (-200mA)Lower on-resistance enables higher current loads but requires larger board area and has higher Ciss (60pF)Select when >150mA load current or lower conduction loss is required; verify SOT23 pad compatibility
SI2301DS-T1-GE3VGS(TH) = -0.7V min; RDS(ON) = 90mΩ @ VGS = -2.5V; same SOT323 footprintSuperior logic-level drive at lower gate voltage but higher RDS(ON) at -5V (12Ω vs. 10Ω)Prefer for ultra-low-voltage MCU interfaces (1.8V IO); confirm thermal margin given lower PD rating (350mW)

Compared with DMN2041L-7 and SI2301DS-T1-GE3, BSS84W-7 offers optimal balance of SOT323 footprint, -50V rating, and verified -130mA capability with JEDEC qualification-making it preferred for cost-sensitive, space-constrained industrial and portable designs where moderate current and robustness are prioritized over ultra-low RDS(ON).

Availability

BSS84W-7 is available at Aetrix Electronics and suitable for portable power switching, logic-level signal routing, and industrial sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for BSS84W-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The BSS84W-7 belongs to Diodes' general-purpose MOSFET product line, engineered for high-reliability discrete switching in consumer, industrial, and automotive-qualified systems where small-signal control, low leakage, and JEDEC-compliant robustness are essential.

FAQ

What is the maximum continuous drain current for BSS84W-7 at 85°C ambient?

At TA = +85°C, the maximum continuous drain current is derated to approximately -80mA, calculated using the 200mW power limit and RDS(ON) increase with temperature (Fig. 5 shows ~12Ω at 125°C junction). This assumes no additional copper pour; PCB layout directly impacts actual usable current.

Can BSS84W-7 be used as a high-side switch with a 3.3V microcontroller GPIO?

Yes - its VGS(TH) range (-0.8V to -2.0V) ensures turn-on when the GPIO pulls the gate to ground while the source is at 3.3V. A 10kΩ pull-up resistor from gate to source provides clean turn-off; no level shifter is needed for basic on/off control.

Is BSS84W-7 suitable for analog signal switching above 1MHz?

It supports analog switching up to ~5MHz based on its 45pF Ciss and 10ns tD(ON), but channel resistance variation with VDS (Fig. 2) introduces distortion above 100kHz for precision AC signals. For >1MHz RF or wideband analog, dedicated analog switches are recommended.

Does BSS84W-7 have automotive-grade qualification?

The BSS84W-7 itself is not AEC-Q200 qualified; however, the automotive-compliant variant BSS84WQ is explicitly qualified to AEC-Q200 standards and shares identical electrical specs and SOT323 packaging - use BSS84WQ for automotive body electronics or infotainment subsystems.

BSS84W-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
45 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

BSS84W-7 FAQ

1.How can I place an order for BSS84W-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84W-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84W-7 reliable?

The price and inventory of BSS84W-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84W-7 is usually 5 days.

3.What payment methods are accepted for BSS84W-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84W-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84W-7?

BSS84W-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84W-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84W-7?

For technical support, including BSS84W-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84W-7 requirements.

6.How does Aetrix verify that BSS84W-7 is sourced from the original manufacturer or authorized distributors?

All BSS84W-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84W-7 meets industry standards.

7.What is the process for return or replacement of BSS84W-7?

All BSS84W-7 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84W-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84W-7 part is unused and in its original packaging.

Return procedure for BSS84W-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS84W-7 Tags

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