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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BST82,235

Name: BST82,235
Brand: Nexperia USA Inc.
SKU: BST82,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BST82,235

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BST82,235.pdf

Description:: MOSFET N-CH 100V 190MA TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BST82,235 from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, designed for low-voltage logic-level switching with R_DS(on) = 5 Ω at V_GS = 5 V and I_D = 150 mA, 100 V drain-source breakdown voltage, and fast 3 ns turn-on/12 ns turn-off times. It serves as a compact high-speed line driver or relay driver in space-constrained industrial control and interface circuits.

For engineers reviewing the BST82,235 datasheet, BST82,235 pinout, BST82,235 application, or BST82,235 equivalent, this page delivers verified electrical parameters, thermal behavior under solder-point heating, gate threshold stability across −55 °C to +150 °C, and real-world diode recovery performance (t_rr = 30 ns, Q_r = 30 nC) critical for snubberless inductive load switching.

Technical Context

The BST82,235 uses TrenchMOS™ technology to achieve low on-resistance and fast switching in a subminiature SOT23 footprint. Its gate threshold voltage (V_GS(th)) ranges from 0.6 V at 150 °C to 3.5 V at −55 °C, enabling reliable turn-on with 3.3 V or 5 V logic drivers without external level shifting.

It features integrated source-drain body diode with V_SD = 0.95 V at I_S = 300 mA and t_rr = 30 ns under dI/dt = −100 A/µs, supporting flyback energy recirculation in relay and solenoid drive applications without added freewheeling components.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V DC - supports operation across 24 V industrial bus and 48 V telecom systems with margin against transients.
R_DS(on)	5 Ω max at V_GS = 5 V, I_D = 150 mA - enables <150 mW conduction loss at rated current, suitable for thermally constrained PCB layouts.
t_on/t_off	3 ns / 12 ns - allows >30 MHz switching in digital line driving and pulse-width modulated load control.
V_GS(th)	1 V min to 2 V typ at 25 °C - ensures robust gate turn-on with standard CMOS/TTL outputs without gate boosting.
C_iss/C_oss	25 pF / 8.5 pF - low input/output capacitance minimizes driver power demand and improves noise immunity in high-dV/dt environments.
P_tot	0.83 W at T_sp = 25 °C - defines maximum continuous power dissipation on standard FR-4 with minimal copper area.
R_th(j-sp)	150 K/W - junction-to-solder-point thermal resistance enables accurate thermal modeling when mounted on metal-clad substrates.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm, e = 1.9 mm, bp = 0.48 mm.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal requiring ≤100 nA leakage at ±20 V; driven directly by 3.3 V/5 V logic with <25 pF input capacitance.
2	Source (S)	Reference node for gate drive and current return path; internally connected to body diode cathode.
3	Drain (D)	High-side switching node; rated for 100 V DC and 0.8 A pulsed current; connects to inductive load or transmission line.

Key Features

Feature	Design Value
TrenchMOS™ architecture	Enables 5 Ω R_DS(on) in SOT23, reducing conduction loss by 40% vs. planar MOSFETs of same size.
Logic-level gate drive	Guaranteed turn-on at V_GS = 3 V across full temperature range, eliminating need for gate driver ICs in 3.3 V systems.
Fast switching (t_on/t_off)	3 ns / 12 ns enables clean edge integrity in 10–50 MHz digital line driving without overshoot or ringing.
Integrated body diode	30 ns reverse recovery time and 30 nC recovered charge support snubberless relay coil demagnetization.
Subminiature SOT23	0.95 mm height and 2.8 × 1.4 mm footprint allow placement in dense signal routing layers or near microcontroller GPIOs.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 24 V DC electromagnetic relays in PLC I/O modules with microcontroller GPIOs.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles 150 mA steady-state and 0.8 A inrush.

Use Value: Integrated body diode with 30 ns t_rr clamps inductive kickback without external diode, saving board space and BOM cost.

Use Scenario: Transmitting TTL/CMOS pulses across 50 Ω coaxial cable in test equipment backplanes.

IC Role / Device Role / Timing Role: Current-buffered output stage delivering fast edges into capacitive and resistive loads.

Use Value: 3 ns t_on and 25 pF C_iss preserve signal rise time below 1 ns, maintaining timing integrity up to 300 Mbps.

Logic Level Translator

Low-Power Load Switch

Use Scenario: Interfacing 3.3 V FPGA I/O to 5 V peripheral buses in embedded instrumentation.

IC Role / Device Role / Timing Role: Bidirectional level-shifting element using gate-controlled conduction path.

Use Value: V_GS(th) ≤ 2 V at 25 °C ensures full enhancement with 3.3 V drive, achieving <100 mV drop at 100 mA.

Use Scenario: Enabling/disabling 5 V power rails to sensors and communication ICs in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by MCU GPIO.

Use Value: 0.83 W P_tot and 150 K/W R_th(j-sp) allow continuous 190 mA operation on 10 mm² copper pour, minimizing thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 3.5 Ω @ 4.5 V, higher C_iss (50 pF), same SOT23 package.	Better conduction efficiency at 3.3 V drive but slower edge rates due to higher capacitance.	Prefer for low-loss DC switching where speed is secondary to thermal performance.
2N7002K	R_DS(on) = 3.5 Ω @ 4.5 V, lower V_DS rating (60 V), identical pinout and footprint.	Limited to 24 V systems; unsuitable for 48 V or transient-prone industrial buses.	Select only when system voltage stays below 40 V and board space requires strict SOT23 compatibility.

Compared with DMN2004K-7 and 2N7002K, BST82,235 uniquely balances 100 V ruggedness, 5 Ω on-resistance at 5 V, and 3 ns switching-making it optimal for 24–48 V industrial interfaces where both voltage margin and edge fidelity matter.

Availability

BST82,235 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, logic level translators, and low-power load switches requiring stable component supply across automotive qualification cycles, industrial automation deployments, and medical device production programs.

Supply support for BST82,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with core focus on automotive, industrial, computing, and consumer markets.

The BST82,235 belongs to Nexperia's TrenchMOS™ logic-level MOSFET product line, engineered specifically for space-constrained, high-reliability switching in 3.3 V/5 V digital systems where fast edge control and body-diode performance are critical.

FAQ

What is the maximum continuous drain current for BST82,235 at 100 °C solder point temperature?

At T_sp = 100 °C, the maximum continuous drain current is 120 mA, as defined in Table 3 (Limiting Values) under "ID drain current (DC)" with derating applied per Figure 2. This reflects thermal limitation of the SOT23 package on standard PCBs, not intrinsic silicon capability.

Does BST82,235 require a gate resistor for safe switching into inductive loads?

A gate resistor is recommended to limit peak gate current and damp ringing, especially when driving relays or solenoids. With C_iss = 25 pF and typical MCU GPIO drive strength, a 10–47 Ω series resistor controls dv/dt and prevents unintended oscillation without compromising 3 ns t_on.

Can BST82,235 be used in a high-side configuration with 5 V gate drive?

No-BST82,235 is an N-channel MOSFET optimized for low-side switching. High-side use would require gate voltage ≥ V_DS + V_GS(th), exceeding practical 5 V drive. For high-side 5 V applications, a P-channel alternative like PMV21EN must be selected.

What is the significance of the 30 ns reverse recovery time (t_rr) in BST82,235's body diode?

The 30 ns t_rr indicates rapid minority-carrier recombination in the integrated body diode, allowing efficient flyback energy handling in relay/solenoid drivers without external snubbers. Measured at dI/dt = −100 A/µs and V_DS = 25 V, it ensures minimal voltage overshoot during turn-off.

BST82,235 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BST82,235 FAQ

1.How can I place an order for BST82,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BST82,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BST82,235 reliable?

The price and inventory of BST82,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BST82,235 is usually 5 days.

3.What payment methods are accepted for BST82,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BST82,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BST82,235?

BST82,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BST82,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BST82,235?

For technical support, including BST82,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BST82,235 requirements.

6.How does Aetrix verify that BST82,235 is sourced from the original manufacturer or authorized distributors?

All BST82,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BST82,235 meets industry standards.

7.What is the process for return or replacement of BST82,235?

All BST82,235 units undergo pre-shipment inspection (PSI). If there is an issue with BST82,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BST82,235 part is unused and in its original packaging.

Return procedure for BST82,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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