Infineon Technologies BSZ010NE2LS5ATMA1

Overview

BSZ010NE2LS5ATMA1 from Infineon Technologies is an N-channel 25 V OptiMOSTM 5 power MOSFET in TSDSON-8 FL package, optimized for high-efficiency buck converters with 1 mΩ R_DS(on) @ V_GS=4.5 V, 212 A continuous drain current, and 100% avalanche tested robustness. It delivers ultra-low conduction loss in server VRMs, GPU power stages, and POL converters.

For engineers reviewing the BSZ010NE2LS5ATMA1 datasheet, BSZ010NE2LS5ATMA1 pinout, BSZ010NE2LS5ATMA1 application, or BSZ010NE2LS5ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g (21 nC), Q_oss (30 nC), thermal resistance (R_thJC = 1.8 °C/W bottom-side), and TSDSON-8 FL footprint compatibility with high-current PCB layouts.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture delivering low gate charge (Q_g = 21 nC @ 0–4.5 V) and minimized output charge (Q_oss = 30 nC), enabling high-frequency switching up to 1 MHz in synchronous buck topologies. Its 1.8 °C/W junction-to-case (bottom) thermal resistance supports direct thermal coupling to heatsinks or copper planes.

The integrated body diode exhibits 0.76 V forward voltage at 20 A and 25 °C, with 20 nC reverse recovery charge (Q_rr) under 400 A/µs di/dt-critical for minimizing shoot-through losses and EMI in hard-switched converters.

Key Specifications

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) is a 5 mm × 6 mm, 0.5 mm pitch, thermally enhanced surface-mount package with exposed drain pad on bottom and source/gate terminals on top side. It supports dual-side cooling and high-current routing via large-area copper connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242TRPBF and DMTH10H015LPS-13, BSZ010NE2LS5ATMA1 offers the best balance of ultra-low R_DS(on), moderate Q_g, and industry-leading thermal performance in the smallest standard 5×6 mm footprint-making it optimal for space-constrained, high-efficiency buck converters.

Availability

BSZ010NE2LS5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery stages, and automotive ADAS domain controllers requiring stable component supply, long-term lifecycle support, and traceable industrial-grade qualification.

Supply support for BSZ010NE2LS5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-frequency, high-current DC/DC conversion in computing, communications, and automotive applications where low R_DS(on), fast switching, and thermal reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSZ010NE2LS5ATMA1 supports 118 A continuous drain current at T_C = 100 °C with V_GS ≥ 4.5 V, as specified in Table 2 of the Rev. 2.2 datasheet. This rating assumes proper PCB copper area (6 cm²) and still-air conditions. Derating is required above 100 °C case temperature per Diagram 2.

Does this MOSFET have an integrated Schottky body diode?

No. It features a standard parasitic body diode with 0.76 V forward voltage at 20 A and 25 °C (Table 7). The diode is not a Schottky structure but is fully characterized for reverse recovery (Q_rr = 20 nC) and rated for 76 A continuous forward current at T_C = 25 °C.

Can BSZ010NE2LS5ATMA1 be used in synchronous rectification?

Yes-it is commonly deployed as the high-side switch in synchronous buck converters. Its low Q_g (21 nC), fast switching times (t_r = 6 ns, t_f = 7.2 ns), and low Q_oss (30 nC) make it suitable for synchronous rectification up to 1 MHz, provided gate drive timing avoids shoot-through.

Is the TSDSON-8 FL package compatible with standard reflow profiles?

Yes. The package is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. Its flat-lead design and exposed drain pad require controlled solder paste volume and stencil aperture design to ensure void-free thermal interface and mechanical reliability.