Infineon Technologies BSZ021N04LS6ATMA1

Overview

BSZ021N04LS6ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM6 power MOSFET in PG-TSDSON-8 FL package, optimized for synchronous rectification with 2.1 mΩ max R_DS(on) at V_GS=10 V, 147 A continuous drain current, and 175 °C junction rating. It serves as a high-efficiency low-side switch in DC-DC converters for server VRMs and telecom POL modules.

For engineers reviewing the BSZ021N04LS6ATMA1 datasheet, BSZ021N04LS6ATMA1 pinout, BSZ021N04LS6ATMA1 application, or BSZ021N04LS6ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (2.4 mΩ), Q_G(0–4.5 V) = 15 nC, Q_oss = 34 nC, thermal resistance R_thJC = 1.8 °C/W, and internal body diode recovery (Q_rr = 55 nC, t_rr = 22 ns).

Technical Context

This MOSFET employs Infineon's OptiMOSTM6 trench-gate process to minimize conduction and switching losses simultaneously. Its low Q_G(0–4.5 V)/Q_gd ratio (15 nC / 3.8 nC ≈ 3.9) enables fast, controllable turn-on with reduced Miller-induced oscillation risk in high-frequency synchronous buck stages.

The device integrates a robust, 100% avalanche-tested body diode with V_SD = 0.79 V at 20 A and T_j = 25 °C, supporting efficient reverse recovery in hard-switched and quasi-resonant topologies. Thermal design leverages bottom-side cooling via the exposed drain pad (R_thJC = 1.8 °C/W) and supports operation up to 175 °C ambient-referenced case temperature.

Key Specifications

Pinout & Package

PG-TSDSON-8 FL is a thermally enhanced 5 mm × 6 mm leadless package with exposed drain pad on bottom side. Pins 5–8 are internally connected to drain; Pin 4 is gate; Pins 1–3 are source terminals. Internal body diode anode connects to source, cathode to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, BSZ021N04LS6ATMA1 delivers the lowest thermal resistance (1.8 °C/W) and guaranteed avalanche rating (189 mJ), making it optimal for space-constrained, high-reliability DC-DC stages where thermal margin and transient robustness are prioritized over marginal gate charge reduction.

Availability

BSZ021N04LS6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and automotive ADAS power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSZ021N04LS6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM6 family-designed specifically for high-frequency, high-efficiency synchronous rectification in DC-DC conversion, emphasizing low R_DS(on), low Q_G, and robust thermal performance in compact packages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 104 A with V_GS = 10 V, as specified in Table 2 of the datasheet. This reflects thermal de-rating from the 147 A rating at 25 °C case temperature, based on the device's R_thJC = 1.8 °C/W and safe operating area limits.

Does BSZ021N04LS6ATMA1 support 3.3 V gate drive in practice?

Yes-its V_GS(th) range (1.3–2.3 V) and R_DS(on) = 2.4 mΩ max at V_GS = 4.5 V enable functional operation with 3.3 V logic-level drivers. However, full 147 A rating requires V_GS ≥ 4.5 V; at 3.3 V, R_DS(on) increases significantly and must be verified per application thermal constraints.

How is the internal body diode characterized for reverse recovery?

The integrated body diode has t_rr = 22 ns and Q_rr = 55 nC at I_F = 20 A, dI_F/dt = 400 A/µs, and V_R = 20 V (Table 7). These values are design-specified-not production-tested-but validated in application circuits per Infineon's OptiMOSTM6 characterization methodology.

Is PG-TSDSON-8 FL compatible with standard SMT reflow profiles?

Yes-the PG-TSDSON-8 FL package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for ≤ 30 seconds. The exposed drain pad requires full solder coverage to achieve specified R_thJC; stencil design must allocate ≥80% paste area to the thermal pad.