Infineon Technologies BSZ033NE2LS5ATMA1

Overview

BSZ033NE2LS5ATMA1 from Infineon Technologies is an N-channel OptiMOSTM5 Power-MOSFET rated for 25 V V_DS, with R_DS(on) = 3.3 mΩ @ V_GS = 4.5 V, Q_G = 6.3 nC (0–4.5 V), and Q_OSS = 9.1 nC - optimized for high-frequency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSZ033NE2LS5ATMA1 datasheet, BSZ033NE2LS5ATMA1 pinout, BSZ033NE2LS5ATMA1 application, or BSZ033NE2LS5ATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche tested ruggedness, JEDEC-qualified reliability for industrial power stages, and TSDSON-8 FL (S3O8) thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs Infineon's OptiMOSTM5 trench-gate process to minimize conduction and switching losses simultaneously. Its low Q_G(0–4.5 V) = 6.3 nC and Q_OSS = 9.1 nC enable efficient operation above 1 MHz in hard-switched topologies, while R_DS(on) = 3.3 mΩ @ 4.5 V supports high-current POL regulation without external gate drivers.

The device integrates a robust body diode with Q_rr = 12 nC and V_SD = 0.82 V @ I_F = 20 A, enabling reliable synchronous rectification and reverse recovery handling in continuous conduction mode (CCM) buck stages. Thermal resistance R_thJC = 4.1 K/W ensures effective heat transfer to PCB copper in compact 40 mm × 40 mm layouts.

Key Specifications

Pinout & Package

TSDSON-8 FL (S3O8) package: thermally enhanced leadless 8-pin exposed-drain DFN with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch; drain terminals occupy pins 1–3 and 5–7 for low-inductance parallel current paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, BSZ033NE2LS5ATMA1 delivers superior FOM_SW and guaranteed avalanche capability - critical for unclamped inductive loads and high-reliability server VRMs where failure modes must be bounded.

Availability

BSZ033NE2LS5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, POL DC-DC converters, industrial motor gate drivers, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for BSZ033NE2LS5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM5 family - engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and ultra-low gate charge are co-optimized.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 49 A with V_GS = 10 V and 44 A with V_GS = 4.5 V, as specified in Table 2 of the datasheet. Derating follows the ID = f(T_C) curve in Diagram 2, where current decreases linearly beyond 25 °C case temperature due to thermal limits.

Is BSZ033NE2LS5ATMA1 suitable for 3.3 V gate drive without level-shifting?

Yes - its gate threshold voltage range (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V allow full enhancement using 3.3 V logic with sufficient margin. At 3.3 V, typical R_DS(on) rises to ~4.8 mΩ (per Diagram 6), still supporting ≤55 A continuous current with acceptable thermal rise on standard PCBs.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.82 V @ 20 A and Q_rr = 12 nC, offering lower forward drop than most 25 V discrete Schottkys (typically 0.45–0.55 V) but with controlled reverse recovery. This tradeoff is intentional for synchronous rectification in CCM buck converters where Q_rr predictability matters more than ultra-low V_F.

Does the TSDSON-8 FL package require solder paste stencil adjustments versus standard DFN-8?

Yes - the TSDSON-8 FL (S3O8) uses a non-standard 0.65 mm pitch and exposes the drain on six pins plus the thermal pad. Recommended stencil aperture is 100% opening for the thermal pad (3.1 mm × 3.1 mm) and 85% for perimeter pads to prevent bridging. Reflow profile must achieve ≥245 °C peak for void-free thermal pad wetting, per Infineon's S3O8 assembly guidelines.