Infineon Technologies BSZ0910NDXTMA1

Overview

BSZ0910NDXTMA1 from Infineon Technologies is a dual N-channel OptiMOS™ PowerStage MOSFET in PG-WISON-8 package, rated for 30 V V_DS, 9.5 mΩ max R_DS(on) at 4.5 V V_GS, and 25 A continuous drain current. It integrates high-side and low-side FETs with logic-level gate drive, avalanche rating, and optimized gate charge (Q_G = 4.0 nC @ 0–4.5 V) for synchronous buck converters in server VRMs and POL modules.

For engineers reviewing the BSZ0910NDXTMA1 datasheet, BSZ0910NDXTMA1 pinout, BSZ0910NDXTMA1 application, or BSZ0910NDXTMA1 equivalent, key selection criteria include its 4.5 V logic-level compatibility, 4.6 nC Q_OSS, 100% lead-free RoHS compliance, and thermal resistance of 4 °C/W (junction-to-case), critical for high-density DC-DC power stages.

Technical Context

This PowerStage integrates two enhancement-mode N-channel MOSFETs in a single 3×3 mm WISON-8 package with bottom-side thermal pad. Its dual-FET topology supports synchronous rectification with matched dynamic characteristics: Q_G = 4.0 nC (0–4.5 V), Q_GD = 1.0 nC, and t_r/t_f = 3.2/2.8 ns under 6 Ω gate resistance.

The device operates in hard-switched topologies with V_GS(th) = 1.2–2.0 V, R_DS(on) = 7.7–13.0 mΩ (dependent on V_GS and T_j), and features an integrated body diode with Q_RR = 5 nC and V_SD = 0.86 V @ 9 A, enabling efficient freewheeling in buck regulators.

Key Specifications

Pinout & Package

BSZ0910NDXTMA1 uses the PG-WISON-8 package: 3×3 mm body with exposed thermal pad on bottom side, 8-pin configuration (dual-source, dual-drain, shared gate terminals). Pin numbering follows standard WISON-8 outline per Infineon Package Outline PL0012.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel PowerStage applications.

Compared with IRFH7107TRPBF and SI7157DN-T1-GE3, BSZ0910NDXTMA1 delivers superior power density (3×3 mm), lower Q_G at logic-level drive, and guaranteed avalanche ruggedness-making it optimal for space-constrained, high-reliability POL applications.

Availability

BSZ0910NDXTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial PLC power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for BSZ0910NDXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BSZ0910NDXTMA1 belongs to the OptiMOS™ PowerStage product line, engineered specifically for high-frequency, high-current DC-DC conversion in data center, telecom, and industrial power systems where thermal efficiency and layout simplicity are critical.

FAQ

What is the maximum recommended gate resistor for BSZ0910NDXTMA1 in a 1 MHz buck converter?

The datasheet specifies t_r = 3.2 ns and t_f = 2.8 ns with R_G,ext = 6 Ω. For 1 MHz operation, a 2–5 Ω gate resistor balances switching speed and EMI control while maintaining safe dV/dt (<5 V/ns) and avoiding shoot-through. Lower values increase peak gate current but require careful PCB routing to minimize inductance.

Does BSZ0910NDXTMA1 require external Schottky diodes for body diode recovery?

No. The integrated body diode has Q_RR = 5 nC and soft recovery characteristics confirmed in Figure 12 of the datasheet. In synchronous buck topologies, the low-side FET actively commutates before reverse recovery completes, eliminating need for external diodes-provided gate timing avoids cross-conduction.

Can BSZ0910NDXTMA1 be used in half-bridge configurations with floating high-side drive?

Yes. Its high-side source terminal is electrically isolated from the package thermal pad, enabling use in half-bridge circuits with bootstrap or isolated gate drivers. The V_GS rating of ±20 V and V_DS = 30 V support typical 12 V bus applications with adequate margin for ringing.

How does the PG-WISON-8 thermal pad affect PCB layout requirements?

The exposed bottom thermal pad must be soldered to a minimum 6 cm² copper area on inner or outer PCB layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground planes. This achieves the rated 4 °C/W R_thJC; omitting vias or undersizing copper raises junction temperature by >25 °C at full load.