Infineon Technologies BSZ15DC02KDHXTMA1

Overview

BSZ15DC02KDHXTMA1 from Infineon Technologies is a dual-channel complementary P+N MOSFET in a single PG-TSDSON-8 package, designed for half-bridge and synchronous rectification circuits. It delivers ±20 V V_DS, 150 mΩ (P) / 55 mΩ (N) R_DS(on) at ±4.5 V_GS, and supports 175 °C operation with AEC-Q101 qualification - used in automotive DC-DC converters and motor gate drivers.

For engineers reviewing the BSZ15DC02KDHXTMA1 datasheet, BSZ15DC02KDHXTMA1 pinout, BSZ15DC02KDHXTMA1 application, or BSZ15DC02KDHXTMA1 equivalent, key selection criteria include complementary channel matching, logic-level gate drive compatibility down to 2.5 V, avalanche ruggedness (11 mJ), thermal resistance (60 K/W), and automotive-grade reliability under transient load conditions.

Technical Context

This dual MOSFET integrates matched P- and N-channel silicon die in a thermally optimized TSDSON-8 leadless package with exposed drain pads. Its common-drain configuration enables compact high-side/low-side switching without external interconnects, reducing parasitic inductance in fast-switching topologies.

The device features super logic-level gate thresholds (–1.0 V typ. for P, +1.1 V typ. for N), low gate charge (Q_g = –4.5 nC / +2.8 nC), and tightly controlled dynamic parameters - including Cr_ss of 140 pF (P) and 24 pF (N) - enabling precise timing control in synchronous buck and H-bridge applications.

Key Specifications

Pinout & Package

BSZ15DC02KDHXTMA1 uses the PG-TSDSON-8 (3.3 mm × 3.3 mm) package with exposed drain thermal pad on both P- and N-channel dies. Pin numbering follows standard TSDSON layout with source terminals isolated per channel and shared drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with IPG20N04S4L32AATMA1 and DMTH6016LSDQ-13, BSZ15DC02KDHXTMA1 uniquely provides matched P+N characteristics in one package, enabling true common-drain half-bridge operation with minimal layout complexity and guaranteed channel timing alignment - critical for automotive functional safety designs.

Availability

BSZ15DC02KDHXTMA1 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and industrial solid-state switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSZ15DC02KDHXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap device technologies.

BSZ15DC02KDHXTMA1 belongs to the OptiMOS™ 2+ family, engineered specifically for high-efficiency, space-constrained automotive and industrial DC-DC and motor drive applications demanding AEC-Q101 reliability and logic-level gate compatibility.

FAQ

What is the maximum allowable gate-source voltage for BSZ15DC02KDHXTMA1?

The absolute maximum V_GS is ±20 V for both channels, but recommended operating range is ±12 V. Exceeding ±12 V increases gate oxide stress risk without performance benefit, especially since full enhancement occurs at ±2.5 V. The device includes built-in gate protection diodes rated for ±100 nA leakage at ±12 V.

Can BSZ15DC02KDHXTMA1 be used in a bootstrap high-side configuration?

No - its common-drain topology requires the drain node to be the switching node, making it unsuitable for bootstrap-based high-side N-MOSFET drive. It is intended for common-drain half-bridge or synchronous rectifier use where both sources are independently accessible and the drain is tied to the switched rail.

How does the avalanche rating impact system design?

The 11 mJ single-pulse E_AS rating allows safe operation during inductive energy dump events like motor stall or relay de-energization without external clamping. Designers must ensure pulse duration stays within the SOA curve's single-pulse limit and that PCB thermal mass prevents junction temperature from exceeding 175 °C during the event.

Is the PG-TSDSON-8 package compatible with standard reflow profiles?

Yes - the lead-free, halogen-free construction supports JEDEC J-STD-020D-compliant reflow with peak temperature up to 260 °C ±12 °C. Thermal pad soldering requires stencil aperture ≥80% of pad area and paste volume sufficient to achieve voiding <20%, verified by X-ray inspection for automotive applications.