Infineon Technologies BSZ215CHXTMA1

Overview

BSZ215CHXTMA1 from Infineon Technologies is a dual-channel complementary P+N enhancement-mode MOSFET in a single PG-TSDSON-8 package, rated for ±20 V V_DS, 3.2 A (P) / 5.1 A (N) continuous drain current at T_A=25 °C, and qualified to AEC-Q101 for automotive use in power management and motor control circuits.

For engineers reviewing the BSZ215CHXTMA1 datasheet, BSZ215CHXTMA1 pinout, BSZ215CHXTMA1 application, or BSZ215CHXTMA1 equivalent, this device supports logic-level drive (2.5 V threshold), avalanche-rated operation, common-drain configuration, and high-temperature operation up to 175 °C in space-constrained automotive and industrial DC-DC modules.

Technical Context

This dual MOSFET integrates matched P- and N-channel devices optimized for half-bridge and synchronous rectifier topologies. Its super logic-level gate drive (V_GS(th) = –1.4 to –0.7 V for P, 0.8 to 1.4 V for N) enables direct interface with 2.5 V/3.3 V microcontrollers without level-shifting.

The device features low R_DS(on) (95 mΩ P-ch / 41 mΩ N-ch @ V_GS = ±4.5 V), tight dynamic parameter matching (C_iss 300–419 pF, t_r/t_f < 4 ns / 2 ns), and robust avalanche energy rating (11 mJ per channel), supporting fast-switching, high-reliability power stages.

Key Specifications

Pinout & Package

BSZ215CHXTMA1 uses the PG-TSDSON-8 package with an exposed drain pad on the bottom side for thermal dissipation. Pin numbering follows standard JEDEC MS-012AC orientation (top view, notch at top-left).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LVT-7 and SI6926ADQ-T1-GE3, BSZ215CHXTMA1 delivers superior thermal capability (175 °C), validated automotive reliability, and tighter parametric matching-making it the preferred choice for safety-critical or high-temperature deployments.

Availability

BSZ215CHXTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and USB-C power delivery systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSZ215CHXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap technologies.

BSZ215CHXTMA1 belongs to the OptiMOS™2+ family, engineered specifically for high-efficiency, space-constrained automotive power switches and synchronous rectifiers requiring logic-level drive and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating for BSZ215CHXTMA1?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±12 V is not recommended, as gate oxide integrity degrades above that level. The device is characterized up to ±12 V for leakage (I_GSS ≤ ±100 nA), and gate drive circuits should include clamping or Zener protection if transient overshoot is possible.

Can BSZ215CHXTMA1 be used in a standard half-bridge configuration?

No - BSZ215CHXTMA1 has a common-drain internal connection, meaning both MOSFETs share one drain terminal. It is designed for source-follower (high-side P-ch + low-side N-ch) or complementary load-switch topologies, not traditional high-side/low-side half-bridges with independent drains. Using it in a conventional half-bridge would short the power rail.

Is the thermal pad on the bottom of the package electrically isolated?

No - the exposed drain pad is internally connected to both MOSFET drains and is electrically active. It must be soldered to a PCB copper pour tied to the system drain net (typically ground for N-ch or supply rail for P-ch configurations). Thermal vias beneath the pad must avoid isolation layers and connect directly to inner-layer copper for effective heat transfer.

Does BSZ215CHXTMA1 support 1.8 V logic-level drive?

No - while V_GS(th) starts conduction near 0.8 V (N) and –0.7 V (P), full enhancement requires ≥2.5 V to achieve specified R_DS(on). At 1.8 V, R_DS(on) increases >3× (to ~240 mΩ N / ~600 mΩ P), causing excessive conduction loss and thermal risk. It is rated as "super logic-level" for 2.5 V systems, not sub-2 V.