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NXP Semiconductors BUK6208-40C,118

Part No.:
BUK6208-40C,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixBUK6208-40C,118.pdf
Description:
MOSFET N-CH 40V 90A DPAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:6,482

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Product details

Overview

BUK6208-40C from NXP Semiconductors is an AEC-Q101-qualified N-channel TrenchMOS FET in DPAK (SOT428) package, designed for automotive power switching. It delivers 90 A continuous drain current at 25 °C mounting base temperature, 40 V drain-source voltage rating, and 5.2 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C - enabling high-efficiency control of motors, solenoids, and lamps in 12 V systems.

For engineers reviewing the BUK6208-40C datasheet, BUK6208-40C pinout, BUK6208-40C application, or BUK6208-40C equivalent, this page provides verified thermal resistance (1.17 K/W junction-to-mounting-base), avalanche energy (113 mJ non-repetitive), gate charge (67 nC total), and automotive-grade reliability data to support robust power stage design and qualification.

Technical Context

This intermediate-level gate drive MOSFET uses NXP's TrenchMOS technology to achieve low on-resistance while maintaining compatibility with both standard (10 V) and logic-level (4.5–5 V) gate drive sources. Its 175 °C maximum junction temperature and AEC-Q101 qualification confirm suitability for thermally demanding automotive environments including start-stop micro-hybrid and electric power steering.

The device integrates a robust intrinsic body diode (VSD = 0.8–1.2 V at 25 A), supports unclamped inductive switching with 113 mJ non-repetitive avalanche energy, and features low internal inductance (LD = 3.5 nH, LS = 7.5 nH) to minimize switching overshoot in high-di/dt applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum drain-source blocking voltage; defines safe operation in 12 V automotive systems with load dump transients.
ID (continuous)90 A at Tmb = 25 °C - Continuous current capability limited by package thermal performance; derates to 70 A at 100 °C mounting base.
RDS(on)5.2 mΩ typ @ VGS = 10 V, ID = 15 A, Tj = 25 °C - Enables <1 W conduction loss at 40 A, critical for thermal management in compact modules.
Ptot128 W @ Tmb = 25 °C - Total power dissipation limit determined by thermal resistance and mounting conditions.
Rth(j-mb)1.17 K/W - Junction-to-mounting-base thermal resistance; enables accurate heatsink sizing when mounted on PCB copper or metal-core substrate.
EAS113 mJ non-repetitive - Unclamped avalanche energy rating; supports reliable operation during inductive turn-off without external snubbers.
QG(tot)67 nC @ VDS = 32 V, VGS = 10 V - Gate charge value used to calculate required gate driver peak current and switching losses.

Pinout & Package

Package: DPAK (SOT428), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl input; accepts 4.5–16 V DC gate drive; threshold voltage 1.8–2.8 V ensures reliable turn-on with logic-level sources.
2 (D)DrainMain power output terminal; internally bonded to mounting base for low-inductance, high-current path and thermal conduction.
3 (S)SourcePower return path; referenced to system ground; forms common node for gate drive return and current sensing.
Mounting base (mb)Drain connectionExposed metal pad soldered to PCB copper pour; serves as primary thermal and electrical path for drain current and heat dissipation.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive use per stress test requirements including temperature cycling, HTRB, and ESD - ensures long-term reliability in engine bay and chassis locations.
175 °C max junction temperatureEnables operation in under-hood environments where ambient temperatures exceed 125 °C; extends lifetime under thermal cycling stress.
Logic-level compatible gateTurns on fully at VGS = 4.5 V (RDS(on) ≤ 10.7 mΩ), eliminating need for gate boosters in MCU-driven 3.3 V/5 V control circuits.
Low internal inductanceLD = 3.5 nH, LS = 7.5 nH - minimizes voltage spikes during fast switching, reducing EMI and gate oscillation risk.
Robust body diodeVSD = 0.8–1.2 V @ 25 A, trr = 43 ns - supports freewheeling in inductive loads without external diode; low Qr (56 nC) reduces recovery losses.

Applications

Electric Power Steering (EPS)Start-Stop Micro-Hybrid Control

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules operating in ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: Main power switch in three-phase inverter bridge; handles bidirectional motor current up to 90 A peak with minimal conduction loss.

Use Value: 5.2 mΩ RDS(on) and 1.17 K/W thermal resistance enable compact heatsink-free designs while meeting ASIL-B functional safety thermal limits.

Use Scenario: Controlling starter motor engagement and battery disconnect during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side load switch managing 50–80 A cranking pulses with <100 ns turn-off delay to prevent backfeed during transition.

Use Value: 113 mJ avalanche rating absorbs inductive kickback from solenoid coils without failure; 175 °C rating sustains repeated thermal cycling over 10-year vehicle life.

Transmission Control SolenoidsLED Headlamp Dimming

Use Scenario: PWM-driven proportional pressure control in automatic transmission valve bodies exposed to oil-immersed, high-vibration environments.

IC Role / Device Role / Timing Role: Low-side switch modulating 2–5 A solenoid current at 100–500 Hz; requires stable RDS(on) across -40 to 150 °C.

Use Value: RDS(on) variation <2.5× from -55 to 175 °C ensures consistent current regulation; AEC-Q101 qualification covers vibration and fluid exposure.

Use Scenario: High-side dimming switch for adaptive LED headlamps requiring precise 0–100% brightness control and short-circuit protection.

IC Role / Device Role / Timing Role: Constant-current switch with integrated overtemperature shutdown; operates at 20–200 kHz PWM frequency.

Use Value: 40 V VDS rating accommodates 12 V supply + load dump transients; low QG (67 nC) enables efficient high-frequency switching with minimal gate driver power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 220 A, 1.7 mΩ RDS(on), PowerFLAT 5x6 package; higher current, lower RDS(on), but no AEC-Q101 certification.Targeted at industrial motor drives; lacks automotive qualification and 175 °C rating.Select only for non-automotive applications requiring higher current density and lower conduction loss.
ON Semiconductor NTMFS4C09NT1G40 V, 100 A, 4.5 mΩ RDS(on), SO-8FL package; AEC-Q101 qualified, but 0.95 K/W Rth(j-mb) and smaller thermal pad.Better suited for space-constrained PCB layouts; lower thermal performance limits sustained 90 A operation.Prefer for compact designs with active cooling; avoid in passive-heatsink-only configurations needing >100 W dissipation.

Compared with STL220N4F7AG and NTMFS4C09NT1G, the BUK6208-40C offers balanced trade-offs: certified automotive reliability, proven 128 W thermal capability via DPAK mounting base, and gate drive flexibility - making it optimal for cost-sensitive, thermally demanding 12 V automotive power stages where qualification and field-proven ruggedness are mandatory.

Availability

BUK6208-40C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK6208-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK6208-40C belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability 12 V power switching in engine, chassis, and body control units where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

What is the maximum continuous drain current rating for BUK6208-40C?

The BUK6208-40C supports 90 A continuous drain current at Tmb = 25 °C, derating to 70 A at Tmb = 100 °C. This rating is package-limited and assumes proper PCB copper area for thermal conduction via the mounting base. The BUK6208-40C datasheet specifies these values in Figure 1 and Table 4 under limiting values.

Is BUK6208-40C suitable for logic-level gate drive applications?

Yes, the BUK6208-40C is explicitly designed for logic-level compatibility: RDS(on) remains ≤10.7 mΩ at VGS = 4.5 V and ID = 15 A, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry. This feature is confirmed in Table 6 of the BUK6208-40C datasheet under static characteristics.

What is the thermal resistance from junction to mounting base for BUK6208-40C?

The BUK6208-40C has a maximum thermal resistance of 1.17 K/W from junction to mounting base (Rth(j-mb)), as specified in Table 5 of its datasheet. This value assumes optimal soldering to a large copper pour and is critical for calculating junction temperature rise under load - a key parameter for BUK6208-40C thermal design validation.

Does BUK6208-40C have avalanche capability, and how is it rated?

The BUK6208-40C is rated for 113 mJ non-repetitive drain-source avalanche energy (EAS) under defined test conditions (ID = 90 A, Vsup ≤ 40 V, RGS = 50 Ω). This rating, found in Tables 1 and 4, confirms ruggedness against inductive switching stresses in automotive solenoid and motor control - a key differentiator of the BUK6208-40C over non-avalanche-rated MOSFETs.

What package type does BUK6208-40C use, and how is the mounting base connected?

The BUK6208-40C uses the DPAK (SOT428) package, with the mounting base electrically connected to the drain terminal (Pin 2). As shown in Table 2 and Figure 17 of the BUK6208-40C datasheet, this configuration provides low-inductance current paths and efficient heat transfer to the PCB, making it essential for high-current automotive power switching applications.

BUK6208-40C,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3720 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
128W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

BUK6208-40C,118 FAQ

1.How can I place an order for BUK6208-40C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK6208-40C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK6208-40C,118 reliable?

The price and inventory of BUK6208-40C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6208-40C,118 is usually 5 days.

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Once your BUK6208-40C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK6208-40C,118?

For technical support, including BUK6208-40C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6208-40C,118 requirements.

6.How does Aetrix verify that BUK6208-40C,118 is sourced from the original manufacturer or authorized distributors?

All BUK6208-40C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6208-40C,118 meets industry standards.

7.What is the process for return or replacement of BUK6208-40C,118?

All BUK6208-40C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6208-40C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK6208-40C,118 part is unused and in its original packaging.

Return procedure for BUK6208-40C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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