Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK6217-55C,118

Part No.:
BUK6217-55C,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixBUK6217-55C,118.pdf
Description:
MOSFET N-CH 55V 44A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,543

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK6217-55C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in DPAK (SOT428) package, designed for automotive power switching with 55 V VDS, 44 A ID (Tmb = 25 °C), 16 mΩ RDS(on) @ 10 V, and 175 °C junction rating - deployed in electric power steering, start-stop micro-hybrid systems, and transmission control.

For engineers reviewing the BUK6217-55C,118 datasheet, BUK6217-55C,118 pinout, BUK6217-55C,118 application, or BUK6217-55C,118 equivalent, this part supports thermally demanding 12 V/24 V automotive loads requiring intermediate-level gate drive compatibility, unclamped avalanche ruggedness (45 mJ), and mounting-base thermal management (Rth(j-mb) = 1.87 K/W).

Technical Context

This device uses advanced TrenchMOS technology to achieve low RDS(on) while maintaining robust avalanche performance and wide gate drive flexibility (VGS(th) = 1.8–2.8 V at 25 °C). Its DPAK package integrates the mounting base directly to the drain, enabling high-current conduction and efficient heat transfer to the PCB heatsink.

The FET supports both standard (10 V) and logic-level (4.5–5 V) gate drive sources, with dynamic parameters including QGD = 11.2 nC and Ciss = 1453 pF (typ.) - optimized for fast switching in motor and solenoid control where EMI and turn-off energy must be tightly managed.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - maximum drain-source blocking voltage for 12 V/24 V automotive bus protection
ID 44 A @ Tmb = 25 °C - continuous current capability with PCB heatsinking
RDS(on) 16 mΩ @ VGS = 10 V, ID = 12 A, Tj = 25 °C - low conduction loss enabling <1 W dissipation at 25 A
EDS(AL)S 45 mJ - unclamped single-pulse avalanche energy at ID = 44 A, supporting inductive load turn-off without external snubbers
Rth(j-mb) 1.87 K/W - thermal resistance from junction to mounting base, enabling >60 W sustained power with proper heatsinking
VGS(th) 1.8–2.8 V @ Tj = 25 °C - enables reliable turn-on with 3.3 V or 5 V microcontroller outputs
QGD 11.2 nC - gate-drain charge determining Miller plateau duration and switching loss in hard-switched topologies

Pinout & Package

DPAK (SOT428) plastic surface-mount package with integral mounting base connected to drain; requires solder pad thermal relief and mechanical anchoring per JEDEC MS-012 standards.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal accepting 0–16 V DC or pulsed gate drive; low input capacitance (Ciss = 1453 pF) reduces driver loading
2 (D) Drain Main high-side power terminal; electrically tied to mounting base for direct PCB thermal path
3 (S) Source Power return node; referenced to gate drive ground; internal source inductance = 7.5 nH affects high-dI/dt ringing
Mounting Base (mb) Drain Extension Exposed copper pad soldered to PCB thermal plane; carries full drain current and dissipates >90% of heat

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive underhood use up to 175 °C junction temperature with lifetime reliability testing
Intermediate gate drive compatibility Operates reliably with both 5 V logic-level and 10 V standard gate drivers - no level-shifting required
Thermal robustness 175 °C max junction temperature and 1.87 K/W Rth(j-mb) enable operation in engine bay environments without forced cooling
Unclamped avalanche rating 45 mJ single-pulse energy handling allows safe interruption of inductive motor/solenoid currents without external clamping
Low RDS(on) at elevated temperature RDS(on) ≤ 42 mΩ @ Tj = 175 °C ensures stable on-state performance across full automotive temperature range

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Systems

Use Scenario: High-reliability MOSFET switching in 12 V EPS motor phase legs, enduring vibration, thermal cycling, and transient overvoltages.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling brushed or BLDC motor current with precise PWM timing.

Use Value: 45 mJ avalanche ruggedness prevents failure during motor back-EMF spikes; 16 mΩ RDS(on) minimizes resistive heating in compact EPS housings.

Use Scenario: Controlling starter motor engagement and battery isolation in 12 V start-stop systems with frequent cold cranking cycles.

IC Role / Device Role / Timing Role: Main battery disconnect switch activated by vehicle ECU during engine stop/start transitions.

Use Value: 44 A continuous current rating supports peak cranking loads; AEC-Q101 qualification ensures longevity under repeated thermal stress.

Transmission Control Solenoids 12 V/24 V Lamp Drivers

Use Scenario: Driving electro-hydraulic transmission solenoids requiring precise current regulation and fast response.

IC Role / Device Role / Timing Role: PWM-controlled power switch modulating solenoid current for gear shift actuation timing.

Use Value: Low QGD (11.2 nC) enables clean turn-off edges critical for accurate current control; 175 °C rating accommodates under-transmission-pan placement.

Use Scenario: Switching high-intensity LED headlamps or incandescent cabin lighting in automotive body control modules.

IC Role / Device Role / Timing Role: High-side or low-side load switch managing steady-state and inrush current for lighting loads.

Use Value: Logic-level gate compatibility (VGS(th) down to 1.8 V) allows direct MCU GPIO drive; integrated source-drain diode handles inductive kickback from filament lamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4L5AG 40 V VDS, 220 A ID, TO-263 package, lower RDS(on) (1.5 mΩ), but not AEC-Q101 qualified Targeted at industrial motor drives, not automotive underhood use Select only for non-automotive 12 V systems requiring higher current and lower conduction loss
IRF1404ZPBF 40 V VDS, 195 A ID, TO-220 package, RDS(on) = 3.7 mΩ, no AEC-Q101 certification Designed for commercial power supplies and UPS, lacks automotive thermal and reliability validation Use only in cost-sensitive non-automotive applications where AEC-Q101 compliance is not required

Compared with STL220N4L5AG and IRF1404ZPBF, BUK6217-55C,118 trades peak current capacity for AEC-Q101 qualification, 55 V rating, and DPAK thermal integration - making it uniquely suitable for space-constrained, safety-critical automotive power nodes where reliability trumps raw current density.

Availability

BUK6217-55C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK6217-55C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive vehicle subsystems requiring AEC-Q101 compliance, robust avalanche behavior, and seamless integration into DPAK-based PCB layouts.

FAQ

Is BUK6217-55C,118 suitable for high-side switching configurations?

Yes - its DPAK package features a mounting base internally connected to the drain, enabling direct high-side placement on heatsinked PCB areas. Gate drive must be referenced to the source, requiring either isolated gate drivers or level-shifted control signals when used above ground potential.

What is the maximum allowable gate-source voltage for continuous operation?

The absolute maximum DC VGS is ±16 V per the datasheet limiting values table. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, keep VGS ≤ ±12 V, especially at elevated temperatures where leakage increases.

Does BUK6217-55C,118 include an integrated body diode, and what are its characteristics?

Yes - it has a built-in source-drain diode with VSD = 0.9–1.2 V at IS = 25 A and Tj = 25 °C, and trr = 43 ns. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification due to moderate recovery charge (Qr = 70 nC).

How does thermal performance change when mounted on a 2-layer versus 4-layer PCB?

Rth(j-mb) remains fixed at 1.87 K/W, but system-level Rth(j-a) improves significantly with 4-layer boards: adding internal copper planes and thermal vias can reduce total junction-to-ambient resistance by 30–50%, enabling ~20% higher continuous current at same ambient temperature.

BUK6217-55C,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
19mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
33.8 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
80W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

BUK6217-55C,118 FAQ

1.How can I place an order for BUK6217-55C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK6217-55C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK6217-55C,118 reliable?

The price and inventory of BUK6217-55C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6217-55C,118 is usually 5 days.

3.What payment methods are accepted for BUK6217-55C,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6217-55C,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK6217-55C,118?

BUK6217-55C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK6217-55C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK6217-55C,118?

For technical support, including BUK6217-55C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6217-55C,118 requirements.

6.How does Aetrix verify that BUK6217-55C,118 is sourced from the original manufacturer or authorized distributors?

All BUK6217-55C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6217-55C,118 meets industry standards.

7.What is the process for return or replacement of BUK6217-55C,118?

All BUK6217-55C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6217-55C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK6217-55C,118 part is unused and in its original packaging.

Return procedure for BUK6217-55C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK6217-55C,118 Tags

  • BUK6217-55C,118
  • BUK6217-55C,118 PDF
  • BUK6217-55C,118 Datasheet
  • BUK6217-55C,118 Specifications
  • BUK6217-55C,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK6217-55C,118
  • Buy BUK6217-55C,118
  • BUK6217-55C,118 Price
  • BUK6217-55C,118 Distributor
  • BUK6217-55C,118 Supplier
  • BUK6217-55C,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER