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Nexperia USA Inc. BUK625R2-30C,118

Part No.:
BUK625R2-30C,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixBUK625R2-30C,118.pdf
Description:
MOSFET N-CH 30V 90A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,110

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Product details

Overview

BUK625R2-30C from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in DPAK (SOT428) package, designed for automotive power switching with 30 V VDS, 4.4 mΩ RDS(on) @ 10 VGS/25 °C, 90 A continuous drain current, and 175 °C junction rating-used in electric power steering and start-stop micro-hybrid systems.

For engineers reviewing the BUK625R2-30C datasheet, BUK625R2-30C pinout, BUK625R2-30C application, or BUK625R2-30C equivalent, key selection criteria include gate drive compatibility (standard/logic-level), thermal robustness in constrained mounting-base environments, avalanche energy handling (153 mJ), and automotive-grade reliability validation per AEC-Q101.

Technical Context

This intermediate-level gate-drive MOSFET employs TrenchMOS technology to achieve low on-resistance while maintaining stable threshold voltage (1.8–2.8 V) across -55 to 175 °C. Its optimized charge profile delivers QG(tot) = 54.8 nC and QGD = 16.2 nC at 10 VGS, enabling fast switching with controlled dV/dt in high-current automotive loads.

The device integrates a monolithic source-drain diode with VSD = 0.8–1.2 V @ 25 A and trr = 45 ns, supporting synchronous rectification and freewheeling in motor control. Thermal resistance Rth(j-mb) = 1.17 K/W ensures efficient heat transfer to the PCB-mounted base, critical for sustained 81 A operation at 100 °C mounting temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum - defines safe blocking capability in 12 V automotive battery systems with load-dump transients.
RDS(on) 4.4 mΩ typical @ VGS = 10 V, ID = 15 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements.
ID (continuous) 90 A @ Tmb = 25 °C - limited by package thermal capacity; derates to 81 A at Tmb = 100 °C per Figure 1.
EAS 153 mJ non-repetitive avalanche energy - supports unclamped inductive turn-off in solenoid and motor control without external snubbers.
Tj max 175 °C - allows operation in under-hood environments where ambient exceeds 125 °C with proper thermal design.
QG(tot) 54.8 nC @ VDS = 24 V, ID = 25 A - determines gate driver current demand and switching loss trade-off in PWM applications.
Ciss 2600–3470 pF @ VDS = 25 V - influences high-frequency gate drive stability and EMI filtering requirements.

Pinout & Package

Package: SOT428 (DPAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain for low-inductance thermal and power path.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts standard (10 V) or logic-level (4.5–5 V) drive; threshold VGS(th) = 1.8–2.8 V ensures reliable turn-on with MCU GPIO.
2 D (Drain) Main power output; internally bonded to mounting base (mb) - requires direct thermal pad connection to PCB copper for Rth(j-mb) = 1.17 K/W performance.
3 S (Source) Power return and reference node; internal source inductance LS = 7.5 nH impacts high-speed switching ringing and layout sensitivity.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification testing in Tier-1 designs.
175 °C junction rating Enables operation in high-ambient under-hood locations (e.g., near engine block or transmission) without derating beyond datasheet curves.
Logic-level gate compatibility RDS(on) = 7.1 mΩ @ VGS = 4.5 V ensures full enhancement with 3.3 V/5 V MCUs - avoids level-shifter complexity in compact ECUs.
Mounting-base thermal path Low Rth(j-mb) = 1.17 K/W allows >80% of total power dissipation to be routed through PCB copper, reducing reliance on external heatsinks.
Integrated source-drain diode VSD = 0.8–1.2 V and trr = 45 ns support efficient freewheeling in brushed DC motor drives without discrete diode addition.

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Systems

Use Scenario: High-current H-bridge phase leg switching for brushless EPS motor commutation under transient torque demands up to 150 A peak.

IC Role / Device Role / Timing Role: Low-side and high-side power switch; handles bidirectional current with integrated body diode recovery during PWM dead-time.

Use Value: 4.4 mΩ RDS(on) minimizes conduction loss at 90 A continuous, while 153 mJ avalanche rating absorbs inductive kickback during fault shutdown.

Use Scenario: 12 V battery main contactor replacement in start-stop systems, cycling thousands of times over vehicle lifetime.

IC Role / Device Role / Timing Role: Solid-state relay replacement; switches battery to starter motor and auxiliary loads with precise timing control and zero arcing.

Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability across extreme thermal cycles; 81 A @ 100 °C Tmb supports sustained cranking loads.

Transmission Control Solenoids LED Headlamp Dimming Drivers

Use Scenario: Proportional current control of electro-hydraulic solenoids regulating line pressure and shift timing in automatic transmissions.

IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side switch; operates at 100–500 Hz with tight duty-cycle resolution.

Use Value: Low QGD = 16.2 nC and fast tf = 66 ns enable clean PWM edges, minimizing solenoid coil heating and improving position accuracy.

Use Scenario: High-efficiency dimming driver for adaptive LED headlamps requiring >100 W per channel with thermal margin in sealed housings.

IC Role / Device Role / Timing Role: Synchronous buck switch; handles 5–10 A continuous LED current with high-frequency (200–500 kHz) switching.

Use Value: Ciss = 2600–3470 pF and QG(tot) = 54.8 nC allow stable gate drive with standard 1 A drivers; RDS(on) < 5 mΩ reduces thermal load in confined optics modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N3LLH6 30 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V - larger die, higher current, TO-263 package; QG(tot) = 105 nC. Requires higher gate drive strength; better suited for high-power inverters than space-constrained EPS modules. Select when >120 A continuous current or lower RDS(on) is required; verify PCB thermal relief for TO-263 footprint.
IRF3205PBF 55 V, 110 A, RDS(on) = 8.0 mΩ @ 10 V - non-automotive grade, 175 °C rated but not AEC-Q101 qualified. Lacks automotive reliability validation; unsuitable for safety-critical EPS or transmission control per ISO 26262. Acceptable only for non-safety 12 V industrial motor controls; avoid in OEM automotive production.

Compared with STL220N3LLH6 and IRF3205PBF, BUK625R2-30C offers optimal balance of AEC-Q101 compliance, DPAK-mounting flexibility, and 4.4 mΩ conduction loss - making it preferred for thermally constrained, high-reliability automotive modules where gate drive simplicity and qualification traceability are mandatory.

Availability

BUK625R2-30C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control solenoids requiring stable component supply across multi-year automotive production programs.

Supply support for BUK625R2-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability components for automotive, industrial, and consumer markets.

BUK625R2-30C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where AEC-Q101 compliance and thermal resilience are non-negotiable.

FAQ

Is BUK625R2-30C suitable for logic-level gate drive from a 3.3 V microcontroller?

Yes - BUK625R2-30C achieves RDS(on) = 7.1 mΩ @ VGS = 4.5 V and 15 A, confirming full enhancement with 3.3 V logic-level sources when used with appropriate gate resistor and layout. VGS(th) ranges from 1.8–2.8 V, ensuring reliable turn-on even at elevated temperatures.

What is the maximum continuous drain current at 100 °C mounting base temperature?

The datasheet specifies ID = 81 A continuous at Tmb = 100 °C and VGS = 10 V (Figure 1). This derating reflects thermal limits of the DPAK package; operation above this requires active cooling or reduced duty cycle per SOA curves in Figure 3.

Does BUK625R2-30C include an integrated body diode, and what are its key parameters?

Yes - it features a monolithic source-drain diode with forward voltage VSD = 0.8–1.2 V @ 25 A and reverse recovery time trr = 45 ns (Tj = 25 °C). Qr = 61 nC supports efficient freewheeling in motor and solenoid applications without external diodes.

How does the mounting base connection affect PCB layout and thermal design?

The mounting base (mb) is electrically tied to the drain and serves as the primary thermal path. It must be soldered to a large, low-thermal-resistance copper pour (≥200 mm² recommended) with ≥4 thermal vias to inner ground planes to achieve the specified Rth(j-mb) = 1.17 K/W and prevent junction overheating.

BUK625R2-30C,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
54.8 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3470 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
128W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

BUK625R2-30C,118 FAQ

1.How can I place an order for BUK625R2-30C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK625R2-30C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK625R2-30C,118 reliable?

The price and inventory of BUK625R2-30C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK625R2-30C,118 is usually 5 days.

3.What payment methods are accepted for BUK625R2-30C,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK625R2-30C,118 transactions.

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4.How is shipping managed for BUK625R2-30C,118?

BUK625R2-30C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK625R2-30C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK625R2-30C,118?

For technical support, including BUK625R2-30C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK625R2-30C,118 requirements.

6.How does Aetrix verify that BUK625R2-30C,118 is sourced from the original manufacturer or authorized distributors?

All BUK625R2-30C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK625R2-30C,118 meets industry standards.

7.What is the process for return or replacement of BUK625R2-30C,118?

All BUK625R2-30C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK625R2-30C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK625R2-30C,118 part is unused and in its original packaging.

Return procedure for BUK625R2-30C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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