Nexperia USA Inc. BUK625R2-30C,118
- Part No.:
- BUK625R2-30C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
BUK625R2-30C,118.pdf
- Description:
- MOSFET N-CH 30V 90A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,110
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK625R2-30C from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in DPAK (SOT428) package, designed for automotive power switching with 30 V VDS, 4.4 mΩ RDS(on) @ 10 VGS/25 °C, 90 A continuous drain current, and 175 °C junction rating-used in electric power steering and start-stop micro-hybrid systems.
For engineers reviewing the BUK625R2-30C datasheet, BUK625R2-30C pinout, BUK625R2-30C application, or BUK625R2-30C equivalent, key selection criteria include gate drive compatibility (standard/logic-level), thermal robustness in constrained mounting-base environments, avalanche energy handling (153 mJ), and automotive-grade reliability validation per AEC-Q101.
Technical Context
This intermediate-level gate-drive MOSFET employs TrenchMOS technology to achieve low on-resistance while maintaining stable threshold voltage (1.8–2.8 V) across -55 to 175 °C. Its optimized charge profile delivers QG(tot) = 54.8 nC and QGD = 16.2 nC at 10 VGS, enabling fast switching with controlled dV/dt in high-current automotive loads.
The device integrates a monolithic source-drain diode with VSD = 0.8–1.2 V @ 25 A and trr = 45 ns, supporting synchronous rectification and freewheeling in motor control. Thermal resistance Rth(j-mb) = 1.17 K/W ensures efficient heat transfer to the PCB-mounted base, critical for sustained 81 A operation at 100 °C mounting temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking capability in 12 V automotive battery systems with load-dump transients. |
| RDS(on) | 4.4 mΩ typical @ VGS = 10 V, ID = 15 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements. |
| ID (continuous) | 90 A @ Tmb = 25 °C - limited by package thermal capacity; derates to 81 A at Tmb = 100 °C per Figure 1. |
| EAS | 153 mJ non-repetitive avalanche energy - supports unclamped inductive turn-off in solenoid and motor control without external snubbers. |
| Tj max | 175 °C - allows operation in under-hood environments where ambient exceeds 125 °C with proper thermal design. |
| QG(tot) | 54.8 nC @ VDS = 24 V, ID = 25 A - determines gate driver current demand and switching loss trade-off in PWM applications. |
| Ciss | 2600–3470 pF @ VDS = 25 V - influences high-frequency gate drive stability and EMI filtering requirements. |
Pinout & Package
Package: SOT428 (DPAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain for low-inductance thermal and power path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts standard (10 V) or logic-level (4.5–5 V) drive; threshold VGS(th) = 1.8–2.8 V ensures reliable turn-on with MCU GPIO. |
| 2 | D (Drain) | Main power output; internally bonded to mounting base (mb) - requires direct thermal pad connection to PCB copper for Rth(j-mb) = 1.17 K/W performance. |
| 3 | S (Source) | Power return and reference node; internal source inductance LS = 7.5 nH impacts high-speed switching ringing and layout sensitivity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification testing in Tier-1 designs. |
| 175 °C junction rating | Enables operation in high-ambient under-hood locations (e.g., near engine block or transmission) without derating beyond datasheet curves. |
| Logic-level gate compatibility | RDS(on) = 7.1 mΩ @ VGS = 4.5 V ensures full enhancement with 3.3 V/5 V MCUs - avoids level-shifter complexity in compact ECUs. |
| Mounting-base thermal path | Low Rth(j-mb) = 1.17 K/W allows >80% of total power dissipation to be routed through PCB copper, reducing reliance on external heatsinks. |
| Integrated source-drain diode | VSD = 0.8–1.2 V and trr = 45 ns support efficient freewheeling in brushed DC motor drives without discrete diode addition. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Systems |
|---|---|
|
Use Scenario: High-current H-bridge phase leg switching for brushless EPS motor commutation under transient torque demands up to 150 A peak. IC Role / Device Role / Timing Role: Low-side and high-side power switch; handles bidirectional current with integrated body diode recovery during PWM dead-time. Use Value: 4.4 mΩ RDS(on) minimizes conduction loss at 90 A continuous, while 153 mJ avalanche rating absorbs inductive kickback during fault shutdown. |
Use Scenario: 12 V battery main contactor replacement in start-stop systems, cycling thousands of times over vehicle lifetime. IC Role / Device Role / Timing Role: Solid-state relay replacement; switches battery to starter motor and auxiliary loads with precise timing control and zero arcing. Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability across extreme thermal cycles; 81 A @ 100 °C Tmb supports sustained cranking loads. |
| Transmission Control Solenoids | LED Headlamp Dimming Drivers |
|
Use Scenario: Proportional current control of electro-hydraulic solenoids regulating line pressure and shift timing in automatic transmissions. IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side switch; operates at 100–500 Hz with tight duty-cycle resolution. Use Value: Low QGD = 16.2 nC and fast tf = 66 ns enable clean PWM edges, minimizing solenoid coil heating and improving position accuracy. |
Use Scenario: High-efficiency dimming driver for adaptive LED headlamps requiring >100 W per channel with thermal margin in sealed housings. IC Role / Device Role / Timing Role: Synchronous buck switch; handles 5–10 A continuous LED current with high-frequency (200–500 kHz) switching. Use Value: Ciss = 2600–3470 pF and QG(tot) = 54.8 nC allow stable gate drive with standard 1 A drivers; RDS(on) < 5 mΩ reduces thermal load in confined optics modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V - larger die, higher current, TO-263 package; QG(tot) = 105 nC. | Requires higher gate drive strength; better suited for high-power inverters than space-constrained EPS modules. | Select when >120 A continuous current or lower RDS(on) is required; verify PCB thermal relief for TO-263 footprint. |
| IRF3205PBF | 55 V, 110 A, RDS(on) = 8.0 mΩ @ 10 V - non-automotive grade, 175 °C rated but not AEC-Q101 qualified. | Lacks automotive reliability validation; unsuitable for safety-critical EPS or transmission control per ISO 26262. | Acceptable only for non-safety 12 V industrial motor controls; avoid in OEM automotive production. |
Compared with STL220N3LLH6 and IRF3205PBF, BUK625R2-30C offers optimal balance of AEC-Q101 compliance, DPAK-mounting flexibility, and 4.4 mΩ conduction loss - making it preferred for thermally constrained, high-reliability automotive modules where gate drive simplicity and qualification traceability are mandatory.
Availability
BUK625R2-30C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control solenoids requiring stable component supply across multi-year automotive production programs.
Supply support for BUK625R2-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability components for automotive, industrial, and consumer markets.
BUK625R2-30C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where AEC-Q101 compliance and thermal resilience are non-negotiable.
FAQ
Is BUK625R2-30C suitable for logic-level gate drive from a 3.3 V microcontroller?
Yes - BUK625R2-30C achieves RDS(on) = 7.1 mΩ @ VGS = 4.5 V and 15 A, confirming full enhancement with 3.3 V logic-level sources when used with appropriate gate resistor and layout. VGS(th) ranges from 1.8–2.8 V, ensuring reliable turn-on even at elevated temperatures.
What is the maximum continuous drain current at 100 °C mounting base temperature?
The datasheet specifies ID = 81 A continuous at Tmb = 100 °C and VGS = 10 V (Figure 1). This derating reflects thermal limits of the DPAK package; operation above this requires active cooling or reduced duty cycle per SOA curves in Figure 3.
Does BUK625R2-30C include an integrated body diode, and what are its key parameters?
Yes - it features a monolithic source-drain diode with forward voltage VSD = 0.8–1.2 V @ 25 A and reverse recovery time trr = 45 ns (Tj = 25 °C). Qr = 61 nC supports efficient freewheeling in motor and solenoid applications without external diodes.
How does the mounting base connection affect PCB layout and thermal design?
The mounting base (mb) is electrically tied to the drain and serves as the primary thermal path. It must be soldered to a large, low-thermal-resistance copper pour (≥200 mm² recommended) with ≥4 thermal vias to inner ground planes to achieve the specified Rth(j-mb) = 1.17 K/W and prevent junction overheating.
BUK625R2-30C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 54.8 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3470 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 128W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
BUK625R2-30C,118 FAQ
1.How can I place an order for BUK625R2-30C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK625R2-30C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK625R2-30C,118 reliable?
The price and inventory of BUK625R2-30C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK625R2-30C,118 is usually 5 days.
3.What payment methods are accepted for BUK625R2-30C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK625R2-30C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK625R2-30C,118?
BUK625R2-30C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK625R2-30C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK625R2-30C,118?
For technical support, including BUK625R2-30C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK625R2-30C,118 requirements.
6.How does Aetrix verify that BUK625R2-30C,118 is sourced from the original manufacturer or authorized distributors?
All BUK625R2-30C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK625R2-30C,118 meets industry standards.
7.What is the process for return or replacement of BUK625R2-30C,118?
All BUK625R2-30C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK625R2-30C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK625R2-30C,118 part is unused and in its original packaging.
Return procedure for BUK625R2-30C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK625R2-30C,118 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

