NXP Semiconductors BUK6507-55C,127

Overview

BUK6507-55C from Nexperia is an N-channel TrenchMOS logic- and standard-level power MOSFET in TO-220AB (SOT78A) package, rated for 55 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 7 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching in 12 V/24 V systems.

For engineers reviewing the BUK6507-55C datasheet, BUK6507-55C pinout, BUK6507-55C application, or BUK6507-55C equivalent, key selection considerations include its 175 °C junction rating, avalanche ruggedness (128 mJ), low gate charge (82 nC at V_GS = 10 V), and compatibility with both logic-level and standard gate drives in thermally demanding environments.

Technical Context

The BUK6507-55C employs advanced TrenchMOS technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage ranges from 1.8 V to 2.8 V at 25 °C, enabling reliable turn-on with 4.5 V–10 V gate drive, and maintains functional operation down to 0.8 V at 175 °C.

It features a robust unclamped inductive switching capability with 128 mJ non-repetitive avalanche energy, integrated source-drain diode (V_SD = 0.8–1.2 V at I_S = 25 A), and thermal resistance of 0.95 K/W from junction to mounting base - optimized for heatsink-mounted automotive power stages.

Key Specifications

Pinout & Package

BUK6507-55C uses the SOT78A (TO-220AB) plastic single-ended package with heatsink mounting and three leads. The mounting base is electrically connected to the drain terminal and serves as the primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N55F7 and IRF1404ZLPBF, the BUK6507-55C uniquely balances AEC-Q101 compliance, 55 V rating, and 7 mΩ on-resistance - making it the only option among the three qualified for 24 V automotive power switching with validated long-term reliability.

Availability

BUK6507-55C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission valve actuation requiring stable component supply across automotive production lifecycles.

Supply support for BUK6507-55C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK6507-55C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in safety-critical 12 V and 24 V vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for BUK6507-55C at 100 °C mounting base temperature?

The BUK6507-55C supports 72 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints of the TO-220AB package and must be verified against actual PCB heatsinking and ambient conditions in the final design. The BUK6507-55C datasheet provides normalized power dissipation curves to assist in thermal modeling.

Is BUK6507-55C suitable for high-side switching configurations?

Yes, the BUK6507-55C can be used in high-side configurations, but requires a gate driver capable of providing V_GS ≥10 V relative to the drain potential. Its 16 V maximum gate-source voltage (DC) and robust avalanche rating make it viable for such topologies in automotive power distribution units. The BUK6507-55C mounting base is tied to the drain, so mechanical isolation from heatsink ground is essential in high-side layouts.

Does BUK6507-55C have a built-in ESD protection diode on the gate?

No - the BUK6507-55C does not integrate gate ESD protection diodes. Gate leakage is specified at ±100 nA (max) with ±20 V pulsed gate voltage, indicating reliance on external layout practices (e.g., RC snubbers, TVS clamping) for ESD robustness. This is consistent with high-power automotive MOSFETs where integrated protection would compromise R_DS(on) and switching speed. Always observe handling precautions per JESD22-A114.

What is the reverse recovery time of the body diode in BUK6507-55C?

The source-drain body diode of the BUK6507-55C has a reverse recovery time (t_rr) of 48 ns under test conditions of I_S = 20 A, dI_S/dt = −100 A/µs, V_DS = 25 V, and V_GS = 0 V (Table 6). This fast recovery supports efficient freewheeling in synchronous rectification and half-bridge topologies. The BUK6507-55C recovered charge (Q_r) is 86 nC, confirming low stored charge for minimal switching loss.

Can BUK6507-55C replace older NXP BUK7507-55B in existing designs?

The BUK6507-55C is not a direct replacement for BUK7507-55B: while both are 55 V N-channel MOSFETs in TO-220AB, the BUK7507-55B has higher R_DS(on) (10.5 mΩ typ) and lower current rating (75 A). The BUK6507-55C offers improved performance but may require gate drive strength verification due to higher Q_G (82 nC vs. ~65 nC). Layout changes are not needed, but thermal and SOA validation is recommended before substitution. The BUK6507-55C remains pin-compatible.