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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK6507-75C,127

Name: BUK6507-75C,127
Brand: Nexperia USA Inc.
SKU: BUK6507-75C,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK6507-75C,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK6507-75C,127.pdf

Description:: MOSFET N-CH 75V 100A TO220AB

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Product details

Overview

BUK6507-75C from NXP Semiconductors is an AEC-Q101-qualified N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for intermediate-level gate drive in automotive power switching. It delivers 100 A continuous drain current at 25 °C mounting base temperature, 75 V drain-source breakdown voltage, and 6.5 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C - enabling high-efficiency control of motors, solenoids, and lamps in 12 V/24 V vehicle systems.

For engineers reviewing the BUK6507-75C datasheet, BUK6507-75C pinout, BUK6507-75C application, or BUK6507-75C equivalent, this device supports thermally demanding automotive subsystems requiring 175 °C junction operation, unclamped avalanche ruggedness (191 mJ), and robust gate charge characteristics (Q_G(tot) = 123 nC at 10 V) for reliable start-stop micro-hybrid and electric power steering actuation.

Technical Context

This N-channel enhancement-mode MOSFET uses advanced TrenchMOS technology to achieve low on-resistance with high thermal stability across -55 °C to +175 °C junction range. Its gate threshold voltage (V_GS(th)) ranges from 1.8 V to 2.8 V at 25 °C and remains functional down to 0.8 V at 175 °C, supporting stable turn-on under elevated temperature conditions.

The device features integrated source-drain diode with 0.8–1.2 V forward voltage at 25 A and 54 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Its dynamic parameters - including Q_GD = 35 nC, C_iss = 5610 pF, and t_d(off) = 247 ns - are optimized for controlled switching transitions in high-current automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V maximum - defines safe blocking capability in 24 V automotive systems with transient overvoltage margin.
I_D (continuous)	100 A at T_mb = 25 °C - enables high-power load control without external parallel devices in compact designs.
R_DS(on)	6.5 mΩ typ @ V_GS = 10 V, T_j = 25 °C - minimizes conduction loss and heatsink requirements in motor/solenoid drivers.
P_tot	204 W @ T_mb = 25 °C - supports high-duty-cycle operation when mounted on adequately sized heatsinks.
R_th(j-mb)	0.74 K/W - quantifies thermal path efficiency from die to mounting base, critical for junction temperature prediction.
E_AS	191 mJ non-repetitive avalanche energy - ensures single-pulse robustness during inductive load switching transients.
Q_G(tot)	123 nC @ V_GS = 10 V - determines gate driver strength requirement for fast, low-loss switching.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected internally to drain terminal. Requires mechanical mounting via single hole; leads are tin-plated except for designated non-tinned zones.

Pin/Terminal	Circuit Role	Design Meaning
1 - G	Gate	Control input; requires ≥10 V drive for full enhancement; gate leakage ≤100 nA at ±20 V.
2 - D	Drain	Main high-side power terminal; electrically tied to mounting base for direct heatsink connection.
3 - S	Source	Power return path; referenced to gate drive circuit; supports 100 A continuous source current.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per standard.
175 °C maximum junction temperature	Enables operation in engine bay and transmission control environments without derating below rated current.
Low R_DS(on) temperature coefficient	R_DS(on) increases only to 19.8 mΩ at 175 °C - maintains predictable conduction loss across full thermal range.
Unclamped avalanche rating	191 mJ energy handling allows safe operation during inductive flyback without external snubbers.
Integrated source-drain diode	54 ns t_rr and 129 nC Q_r support efficient freewheeling in brushed DC motor and solenoid circuits.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules.

IC Role / Device Role / Timing Role: Main power switch controlling bidirectional torque assist; operates in PWM mode at 10–20 kHz.

Use Value: 6.5 mΩ R_DS(on) reduces I²R losses during sustained assist, while 175 °C rating accommodates under-hood ambient temperatures up to 125 °C.

Use Scenario: Starter motor engagement/disengagement and battery load management during engine restart.

IC Role / Device Role / Timing Role: High-side load switch isolating starter circuit and managing regenerative braking energy routing.

Use Value: 191 mJ avalanche energy withstands inductive kickback from starter solenoid coil; 100 A rating handles peak cranking currents.

Transmission Control Solenoids

LED Headlamp Dimming Drivers

Use Scenario: Precision current regulation for pressure-control and shift-solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: Low-side or high-side switch modulating 2–5 A solenoid current with 1–10 kHz PWM.

Use Value: Tight V_GS(th) distribution (1.8–2.8 V) ensures consistent turn-on across temperature; low Q_GD enables clean edge control.

Use Scenario: High-current dimming and on/off control of multi-LED headlamp arrays (e.g., adaptive driving beams).

IC Role / Device Role / Timing Role: High-side switching element delivering up to 8 A per channel with fast rise/fall times.

Use Value: 54 ns t_rr and low C_oss (441–530 pF) minimize switching losses and EMI during high-frequency PWM dimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	75 V V_DS, 220 A I_D, 3.7 mΩ R_DS(on) - higher current rating but larger TO-247 package and 150 °C max T_j.	Requires larger PCB footprint and heatsink; better suited for dual-motor EPS or high-power inverters.	Select when >100 A continuous current or lower R_DS(on) is required, accepting larger form factor and reduced thermal margin.
IRFB4115PBF	150 V V_DS, 110 A I_D, 7.5 mΩ R_DS(on) - wider voltage margin but no AEC-Q101 qualification or 175 °C rating.	Not qualified for automotive use; suitable only for industrial 24 V systems with less stringent reliability requirements.	Choose only for non-automotive applications where 150 V blocking is needed and AEC-Q101 compliance is not mandatory.

Compared with STL220N4F7AG and IRFB4115PBF, the BUK6507-75C uniquely balances AEC-Q101 compliance, 175 °C operation, and TO-220AB compactness - making it optimal for space-constrained, thermally aggressive automotive modules where qualification and thermal resilience outweigh raw current or voltage headroom.

Availability

BUK6507-75C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control solenoids requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK6507-75C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK6507-75C belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability, high-current switching in engine, chassis, and body electronics where AEC-Q101 qualification and 175 °C operation are mandatory.

FAQ

What is the maximum continuous drain current for BUK6507-75C at 100 °C mounting base temperature?

The BUK6507-75C supports 72 A continuous drain current at T_mb = 100 °C, as specified in Table 4 (Limiting Values). This derating reflects thermal resistance constraints and is validated by Figure 1 in the datasheet, which shows ID vs. T_mb curves for both 25 °C and 100 °C conditions.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 (Pinning information) and Figure 17 (Package outline). This design enables direct thermal coupling to a heatsink while requiring electrical isolation of the heatsink from system ground if used in high-side configurations.

Does BUK6507-75C include integrated gate protection diodes?

No - the BUK6507-75C does not integrate gate protection diodes. Its absolute maximum V_GS rating is ±16 V DC (±20 V pulsed), and external Zener clamping is recommended when driving from logic-level sources or in noisy automotive environments to prevent gate oxide damage.

Can BUK6507-75C be used in synchronous rectification applications?

No - the BUK6507-75C is not optimized for synchronous rectification. Its body diode has relatively high V_SD (0.8–1.2 V) and moderate t_rr (54 ns), and its gate charge profile lacks the low Q_G/Q_GD ratio required for high-frequency, low-loss SR operation. It is intended for controlled switching, not passive rectification.

BUK6507-75C,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 204W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK6507-75C,127 FAQ

1.How can I place an order for BUK6507-75C,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK6507-75C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK6507-75C,127 reliable?

The price and inventory of BUK6507-75C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6507-75C,127 is usually 5 days.

3.What payment methods are accepted for BUK6507-75C,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6507-75C,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK6507-75C,127?

BUK6507-75C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK6507-75C,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK6507-75C,127?

For technical support, including BUK6507-75C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6507-75C,127 requirements.

6.How does Aetrix verify that BUK6507-75C,127 is sourced from the original manufacturer or authorized distributors?

All BUK6507-75C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6507-75C,127 meets industry standards.

7.What is the process for return or replacement of BUK6507-75C,127?

All BUK6507-75C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6507-75C,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK6507-75C,127 part is unused and in its original packaging.

Return procedure for BUK6507-75C,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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