Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK6510-75C,127

Name: BUK6510-75C,127
Brand: NXP Semiconductors
SKU: BUK6510-75C,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BUK6510-75C,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK6510-75C,127.pdf

Description:: MOSFET N-CH 75V 77A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,274

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BUK6510-75C from Nexperia is an AEC Q101-qualified N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for high-reliability automotive power switching. It delivers 77 A continuous drain current at 10 V gate drive, 75 V drain-source breakdown voltage, and 8.9 mΩ typical R_DS(on) at 25 °C - enabling efficient control of motors, solenoids, and lamps in 12 V systems.

For engineers reviewing the BUK6510-75C datasheet, BUK6510-75C pinout, BUK6510-75C application, or BUK6510-75C equivalent, key selection criteria include its 175 °C junction rating, non-repetitive avalanche energy of 122 mJ, thermal resistance of 0.95 K/W (junction-to-mounting-base), suitability for thermally demanding environments, and compatibility with intermediate-level gate drive sources.

Technical Context

This device uses advanced TrenchMOS technology to achieve low on-resistance and robust avalanche ruggedness. Its gate threshold voltage ranges from 1.8 V to 2.8 V at 25 °C, supporting both standard and logic-level drive, while maintaining stable operation across -55 °C to 175 °C junction temperature.

The integrated source-drain diode exhibits 0.8–1.2 V forward voltage at 25 A and 50.5 ns reverse recovery time, enabling reliable commutation in inductive load switching. Dynamic parameters include 81 nC total gate charge (V_GS = 10 V) and 3938–5251 pF input capacitance, defining switching speed and driver requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V maximum - supports full 12 V automotive system transients including load dump up to ISO 7637-2 Pulse 5a.
I_D	77 A continuous at T_mb = 25 °C - enables high-current loads like power steering motors without forced cooling.
R_DS(on)	8.9 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - minimizes conduction loss and thermal rise in high-duty-cycle applications.
E_DS(AL)S	122 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events without failure.
R_th(j-mb)	0.95 K/W - allows direct heatsink mounting for efficient thermal management in space-constrained engine bay layouts.
V_GS(th)	1.8–2.8 V at 25 °C - ensures turn-on with common microcontroller GPIOs and low-voltage drivers.
T_j max	175 °C - qualified per AEC Q101 for sustained operation in under-hood environments.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain. Three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). Mounting base serves as thermal and electrical connection to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤16 V DC gate-source voltage; 52 nC total gate charge defines driver sizing.
2 (D)	Drain	Main high-side power terminal; electrically and thermally tied to mounting base for heatsinking.
3 (S)	Source	Power return path; referenced to system ground in low-side switch configurations.
Mounting base (mb)	Drain extension	Provides primary thermal path to heatsink; must be insulated if drain is not at chassis potential.

Key Features

Feature	Design Value
AEC Q101 qualification	Validated for automotive-grade reliability, including temperature cycling, humidity testing, and mechanical shock per AEC standards.
175 °C junction rating	Enables uninterrupted operation in high-ambient under-hood locations without derating at elevated temperatures.
TrenchMOS architecture	Delivers lower R_DS(on) and higher figure-of-merit than planar MOSFETs, reducing conduction losses by >25% at same die size.
Non-repetitive avalanche capability	122 mJ energy rating allows safe clamping of inductive kickback in motor and solenoid drives without external snubbers.
Logic-level compatible gate	Turns on fully with 4.5 V–5 V gate drive, eliminating need for level-shifting circuitry when driven by 5 V MCUs or ASICs.

Applications

Electric Power Steering (EPS)	Start-Stop Micro-Hybrid Control
Use Scenario: High-current bidirectional motor control in column-assist or rack-assist EPS modules. IC Role / Device Role / Timing Role: Low-side or high-side power switch managing phase current in brushless DC motor inverter legs. Use Value: 77 A continuous current and 122 mJ avalanche energy ensure robust response to sudden torque demand and fault conditions.	Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-current solid-state relay replacing electromechanical contactors for faster, quieter, and more reliable start-stop cycles. Use Value: 0.95 K/W thermal resistance and 175 °C rating sustain repeated high-pulse currents without thermal shutdown.
Transmission Valve Control	LED Headlamp Dimming
Use Scenario: PWM-driven solenoid actuation for hydraulic pressure modulation in automatic transmission shift control units. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in high-side or low-side configuration driving 12 V solenoid coils. Use Value: 50.5 ns reverse recovery time and low gate charge enable clean, jitter-free PWM at frequencies up to 20 kHz.	Use Scenario: High-efficiency dimming of LED headlamp arrays via constant-current buck regulation or direct PWM switching. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET in DC/DC converter output stage or high-side lamp driver. Use Value: 8.9 mΩ R_DS(on) minimizes conduction loss at 5–10 A load currents, improving system efficiency and reducing thermal load on PCB.

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Control

Use Scenario: High-current bidirectional motor control in column-assist or rack-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side or high-side power switch managing phase current in brushless DC motor inverter legs.

Use Value: 77 A continuous current and 122 mJ avalanche energy ensure robust response to sudden torque demand and fault conditions.

Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current solid-state relay replacing electromechanical contactors for faster, quieter, and more reliable start-stop cycles.

Use Value: 0.95 K/W thermal resistance and 175 °C rating sustain repeated high-pulse currents without thermal shutdown.

Transmission Valve Control

LED Headlamp Dimming

Use Scenario: PWM-driven solenoid actuation for hydraulic pressure modulation in automatic transmission shift control units.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in high-side or low-side configuration driving 12 V solenoid coils.

Use Value: 50.5 ns reverse recovery time and low gate charge enable clean, jitter-free PWM at frequencies up to 20 kHz.

Use Scenario: High-efficiency dimming of LED headlamp arrays via constant-current buck regulation or direct PWM switching.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET in DC/DC converter output stage or high-side lamp driver.

Use Value: 8.9 mΩ R_DS(on) minimizes conduction loss at 5–10 A load currents, improving system efficiency and reducing thermal load on PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DS, 220 A I_D, 1.6 mΩ R_DS(on) - lower voltage rating, higher current, lower on-resistance.	Not suitable for 75 V transient protection; intended for 24 V industrial or 48 V mild-hybrid systems.	Select only if operating voltage stays below 40 V and higher current/efficiency is prioritized over automotive transients.
IRF1404ZPBF	40 V V_DS, 195 A I_D, 3.8 mΩ R_DS(on), TO-220 package - no AEC Q101 qualification, higher R_DS(on) at 100 °C.	Lacks automotive qualification; thermal performance degrades faster above 100 °C; unsuitable for safety-critical EPS or transmission control.	Acceptable for cost-sensitive 12 V consumer or industrial switching where AEC compliance is not required.

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK6510-75C uniquely balances 75 V rating, AEC Q101 qualification, 175 °C operation, and 8.9 mΩ on-resistance - making it the only option among the three validated for demanding 12 V automotive power switching with transient immunity and long-term reliability.

Availability

BUK6510-75C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, transmission valve actuation, and LED headlamp dimming requiring stable component supply and automotive-grade traceability.

Supply support for BUK6510-75C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 with focus on automotive, industrial, computing, and consumer markets.

The BUK6510-75C belongs to Nexperia's TrenchMOS automotive-qualified PowerMOS family, engineered specifically for high-reliability 12 V automotive power switching in thermally demanding, safety-critical applications.

FAQ

What is the maximum continuous drain current rating for the BUK6510-75C?

The BUK6510-75C supports 77 A continuous drain current at mounting base temperature (T_mb) of 25 °C and V_GS = 10 V. At T_mb = 100 °C, the rating drops to 54 A due to thermal derating. This value is defined in Figure 1 of the datasheet and reflects real-world conduction capability under heatsink-cooled conditions.

Is the BUK6510-75C suitable for use in automotive start-stop systems?

Yes, the BUK6510-75C is explicitly qualified to AEC Q101 and designed for start-stop micro-hybrid applications. Its 175 °C junction rating, 122 mJ avalanche energy, and robust thermal resistance (0.95 K/W) allow it to handle repeated high-current pulses during engine restart without degradation - as confirmed in Section 1.3 and Table 4 of the datasheet.

What is the gate-source threshold voltage range for the BUK6510-75C?

The BUK6510-75C has a gate-source threshold voltage (V_GS(th)) of 1.8 V to 2.8 V at T_j = 25 °C and ID = 1 mA. At 175 °C, it decreases to 0.5–0.8 V, ensuring reliable turn-on even at extreme temperatures. These values are specified in Table 6 and visualized in Figures 9 and 11.

Does the BUK6510-75C have avalanche ruggedness, and how is it rated?

Yes, the BUK6510-75C is rated for non-repetitive drain-source avalanche energy (E_DS(AL)S) of 122 mJ under defined test conditions (ID = 77 A, V_sup ≤ 75 V, R_GS = 50 Ω, T_j(init) = 25 °C). This rating is documented in Tables 1 and 4 and supports safe operation during inductive load switching without external protection.

What package type does the BUK6510-75C use, and how is thermal management implemented?

The BUK6510-75C uses the TO-220AB (SOT78A) package, where the mounting base is electrically and thermally connected to the drain. Thermal resistance from junction to mounting base is 0.95 K/W, enabling direct attachment to a heatsink. This configuration is detailed in Table 5, Figure 4, and the package outline in Section 7.

BUK6510-75C,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5251 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK6510-75C,127 FAQ

1.How can I place an order for BUK6510-75C,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK6510-75C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK6510-75C,127 reliable?

The price and inventory of BUK6510-75C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6510-75C,127 is usually 5 days.

3.What payment methods are accepted for BUK6510-75C,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6510-75C,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK6510-75C,127?

BUK6510-75C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK6510-75C,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK6510-75C,127?

For technical support, including BUK6510-75C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6510-75C,127 requirements.

6.How does Aetrix verify that BUK6510-75C,127 is sourced from the original manufacturer or authorized distributors?

All BUK6510-75C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6510-75C,127 meets industry standards.

7.What is the process for return or replacement of BUK6510-75C,127?

All BUK6510-75C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6510-75C,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK6510-75C,127 part is unused and in its original packaging.

Return procedure for BUK6510-75C,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…