NXP Semiconductors BUK652R3-40C,127

Overview

BUK652R3-40C from Nexperia is an N-channel TrenchMOS power MOSFET in TO-220AB (SOT78A) package, designed for intermediate-level gate drive in automotive 12 V systems. It delivers 120 A continuous drain current at T_mb = 25 °C, features 2.0 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 175 °C junction temperature, and is AEC-Q101 qualified for electric power steering and transmission control.

For engineers reviewing the BUK652R3-40C datasheet, BUK652R3-40C pinout, BUK652R3-40C application, or BUK652R3-40C equivalent, key selection criteria include its 40 V V_DS, low thermal resistance (R_th(j-mb) = 0.49 K/W), avalanche energy rating (1.02 J), gate charge profile (Q_G(tot) = 260 nC), and suitability for thermally demanding 12 V automotive switching.

Technical Context

This device uses advanced TrenchMOS technology to achieve low on-resistance and high current capability while maintaining robustness under pulsed and avalanche conditions. Its gate threshold voltage (V_GS(th)) ranges from 1.8 V to 2.8 V at 25 °C, enabling reliable turn-on with standard 5 V or 10 V gate drivers in automotive control modules.

The integrated source-drain diode exhibits 0.8–1.2 V forward voltage at 25 A and 25 °C, with 63 ns reverse recovery time and 127 nC recovered charge - critical for minimizing switching losses in inductive load control such as solenoids and motors.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected internally to the drain terminal. Features 3 leads and one mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRFB4115PBF, the BUK652R3-40C offers the lowest R_DS(on) and highest continuous current in a standard TO-220AB footprint, making it optimal for thermally aggressive 12 V automotive switching where conduction efficiency and avalanche margin are prioritized.

Availability

BUK652R3-40C is available at Aetrix Electronics and suitable for electric power steering, transmission control, and Start-Stop micro-hybrid systems requiring stable component supply and long-term automotive-grade availability.

Supply support for BUK652R3-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK652R3-40C belongs to Nexperia's TrenchMOS automotive power MOSFET family, engineered specifically for high-current, high-temperature 12 V automotive subsystems including EPS, TCM, and Start-Stop systems.

FAQ

What is the maximum continuous drain current rating for BUK652R3-40C?

The BUK652R3-40C supports 120 A continuous drain current at mounting base temperature (T_mb) of 25 °C, as specified in the datasheet's Quick Reference Data table. This rating is package-limited and decreases with rising T_mb; at T_mb = 100 °C, it remains 120 A due to thermal design margins, but actual usable current depends on heatsink performance and ambient conditions. The BUK652R3-40C achieves this via low R_th(j-mb) (0.49 K/W) and robust TrenchMOS die construction.

Is BUK652R3-40C suitable for gate drive with 5 V logic-level controllers?

Yes, the BUK652R3-40C is characterized for intermediate-level gate drive and exhibits 2.5 mΩ typical R_DS(on) at V_GS = 5 V and T_j = 25 °C. While optimized for 10 V drive, its gate threshold voltage (1.8–2.8 V) ensures reliable turn-on with 5 V microcontrollers or gate drivers. However, designers should verify dynamic performance - Q_G(tot) drops to 147 nC at 5 V - and confirm thermal margin given higher on-resistance versus 10 V operation. The BUK652R3-40C remains viable in cost-sensitive 5 V automotive modules.

Does BUK652R3-40C have an integrated body diode, and what are its key parameters?

Yes, the BUK652R3-40C includes an integrated source-drain diode rated for 120 A continuous forward current at T_mb = 25 °C. Key parameters include 0.8–1.2 V forward voltage at 25 A and 25 °C, 63 ns reverse recovery time (t_rr), and 127 nC recovered charge (Q_r). These values enable efficient freewheeling in inductive loads like solenoids and motors without external diodes. The BUK652R3-40C's diode is co-packaged and thermally coupled to the MOSFET die, ensuring matched thermal behavior during high-frequency PWM operation.

What is the avalanche energy rating of BUK652R3-40C, and how is it tested?

The BUK652R3-40C has a non-repetitive drain-source avalanche energy rating (E_DS(AL)S) of 1.02 J, measured under conditions of I_D = 120 A, V_sup ≤ 40 V, R_GS = 50 Ω, V_GS = 10 V, and initial junction temperature of 25 °C in unclamped inductive switching. This rating validates single-event fault tolerance during inductive load interruption - critical for solenoid and motor control. The BUK652R3-40C does not specify repetitive avalanche energy, so repeated avalanche stress must be avoided in design. Testing follows JEDEC standards per the datasheet's Limiting Values section.

How does the thermal resistance of BUK652R3-40C impact heatsink selection?

The BUK652R3-40C has a junction-to-mounting-base thermal resistance (R_th(j-mb)) of 0.49 K/W, meaning each watt dissipated raises the junction temperature 0.49 °C above the mounting base temperature. For example, at 200 W dissipation and 50 °C heatsink temperature, junction temperature reaches 149 °C - within the 175 °C limit. This low R_th allows compact heatsinks but demands direct, low-thermal-resistance mounting (e.g., thermal paste + screw torque control). The BUK652R3-40C's mounting base is electrically connected to Drain, so insulation must be considered if the heatsink is grounded.