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NXP Semiconductors BUK652R6-40C,127
- Part No.:
- BUK652R6-40C,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK652R6-40C,127.pdf
- Description:
- MOSFET N-CH 40V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,041
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Product details
Overview
BUK652R6-40C from Nexperia is an N-channel TrenchMOS FET designed for high-current automotive power switching, featuring 40 V VDS, 2.32 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 120 A continuous drain current at Tmb = 25 °C, 175 °C junction temperature rating, and AEC-Q101 qualification - deployed in electric power steering and transmission control modules.
For engineers reviewing the BUK652R6-40C datasheet, BUK652R6-40C pinout, BUK652R6-40C application, or BUK652R6-40C equivalent, key selection criteria include its low on-resistance under 10 V gate drive, avalanche energy rating of 637 mJ, thermal resistance of 0.57 K/W (junction-to-mounting base), and TO-220AB package suitability for thermally demanding 12 V/24 V automotive systems.
Technical Context
This device uses advanced TrenchMOS technology to achieve ultra-low RDS(on) while maintaining robust avalanche ruggedness and stable threshold voltage across -55 °C to 175 °C. Its gate threshold voltage (VGS(th)) ranges from 1.8 V to 2.8 V at 25 °C and remains functional down to 0.8 V at 175 °C, enabling reliable turn-on with standard and logic-level gate drivers.
The integrated source-drain diode supports freewheeling in inductive loads, with VSD = 0.85 V typical at 25 A and reverse recovery time (trr) of 60 ns. Dynamic parameters include QG(tot) = 199 nC at 10 V and Ciss = 8501 pF, indicating optimized switching behavior for high-frequency PWM control in motor and solenoid applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports full operation in 24 V automotive systems with margin against load dump transients. |
| RDS(on) | 2.32 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID | 120 A continuous at Tmb = 25 °C - rated for high-power motor and lamp loads without derating at ambient mounting conditions. |
| EAS | 637 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events common in solenoid and transmission control. |
| Rth(j-mb) | 0.57 K/W - allows efficient heat transfer to external heatsink, supporting sustained 100+ A operation with proper thermal design. |
| VGS(th) | 1.8–2.8 V at 25 °C - ensures compatibility with both 3.3 V and 5 V microcontroller outputs without level-shifting. |
| trr | 60 ns - minimizes switching losses and EMI during diode commutation in H-bridge and buck configurations. |
Pinout & Package
BUK652R6-40C is housed in a SOT78A (TO-220AB) plastic single-ended package with heatsink mounting, 1 mounting hole, and 3 leads. The mounting base is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≤16 V DC drive; gate leakage <100 nA ensures low standby power. |
| 2 (D) | Drain | Main high-side power path; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits. |
| 3 (S) | Source | Power return path; referenced to gate drive; internal source inductance of 7.5 nH impacts high-speed switching layout. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock - suitable for safety-critical EPS and transmission modules. |
| 175 °C junction rating | Enables operation in engine bay environments without thermal derating, extending lifetime in thermally constrained enclosures. |
| Logic-level compatible | Turns on fully with 4.5 V gate drive (RDS(on) ≤ 4.5 mΩ), eliminating need for dedicated gate drivers in MCU-based control units. |
| TrenchMOS architecture | Delivers 30% lower RDS(on) vs planar MOSFETs at same die size - improves power density and reduces conduction losses in compact ECUs. |
| High avalanche ruggedness | 637 mJ EAS supports robust operation during inductive kickback in solenoid valves and brushed DC motors without external snubbers. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
Use Scenario: High-current bidirectional motor phase switching in column-assist or rack-assist EPS modules. IC Role / Device Role / Timing Role: Main power switch in three-phase inverter half-bridge legs, handling up to 120 A peak currents. Use Value: Low RDS(on) and 175 °C rating ensure minimal thermal rise during repeated assist cycles, improving system efficiency and torque response. |
Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-side load switch managing cranking current and regenerative braking energy routing. Use Value: Avalanche energy rating absorbs inductive spikes from starter solenoids, eliminating need for external TVS protection. |
| Transmission Control Solenoids | LED Headlamp Dimming |
Use Scenario: PWM-driven proportional pressure control in automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-speed switching element modulating 25 A solenoid current at 1–10 kHz. Use Value: 60 ns trr and low QGD (56.7 nC) enable clean current transitions, minimizing hydraulic chatter and improving shift smoothness. |
Use Scenario: High-side dimming of multi-string LED headlamps in adaptive driving beam (ADB) systems. IC Role / Device Role / Timing Role: Precision current regulator in constant-current LED driver stage, operating at 200–500 Hz PWM. Use Value: Stable VGS(th) over temperature ensures consistent brightness across ambient range (-40 °C to 125 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ RDS(on), 200 A ID, DFN5x6 package - no mounting base, higher current but lower thermal mass. | Preferred for space-constrained PCBs where heatsinking is via board copper; not suited for bolted heatsink interfaces. | Select when footprint and weight are critical and thermal interface is via PCB, not mechanical heatsink. |
| IRF1404ZPBF | 40 V, 3.8 mΩ RDS(on), 195 A ID, TO-220AB - higher RDS(on), lower avalanche rating (320 mJ), legacy planar process. | Used in cost-sensitive industrial motor drives; lacks AEC-Q101 qualification and 175 °C rating. | Select only for non-automotive applications where qualification and extended temperature range are not required. |
Compared with STL220N4F7AG and IRF1404ZPBF, BUK652R6-40C uniquely balances AEC-Q101 compliance, 0.57 K/W thermal resistance, and 637 mJ avalanche capability - making it the only option qualified for thermally aggressive, safety-critical automotive power switching where bolted heatsink attachment is mandatory.
Availability
BUK652R6-40C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control requiring stable component supply with long-term automotive lifecycle support.
Supply support for BUK652R6-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The BUK652R6-40C belongs to Nexperia's TrenchMOS automotive-qualified PowerMOS family, engineered specifically for high-reliability, high-current switching in 12 V and 24 V vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for BUK652R6-40C?
The BUK652R6-40C supports 120 A continuous drain current at mounting base temperature (Tmb) of 25 °C, as specified in Figure 1 of the datasheet. This rating is package-limited and decreases with rising Tmb; at Tmb = 100 °C, the device still sustains 120 A due to its optimized thermal design. The BUK652R6-40C achieves this performance using TrenchMOS technology and a low Rth(j-mb) of 0.57 K/W.
Is BUK652R6-40C suitable for logic-level gate drive applications?
Yes, the BUK652R6-40C is explicitly designed for standard and logic-level gate drive sources. At VGS = 4.5 V and Tj = 25 °C, RDS(on) is guaranteed ≤4.5 mΩ, enabling full enhancement with 3.3 V or 5 V microcontrollers. Its VGS(th) range (1.8–2.8 V at 25 °C) ensures predictable turn-on without external level-shifting circuitry - a key feature confirmed in Table 6 of the BUK652R6-40C datasheet.
What is the avalanche energy rating of BUK652R6-40C and how is it tested?
The BUK652R6-40C has a non-repetitive drain-source avalanche energy (EDS(AL)S) rating of 637 mJ, measured under conditions of ID = 120 A, Vsup ≤40 V, RGS = 50 Ω, VGS = 10 V, and Tj(init) = 25 °C in unclamped inductive switching. This value is verified per JEDEC standards and reflects robustness against inductive kickback in solenoid and motor control - a critical parameter documented in Tables 1 and 4 of the BUK652R6-40C product data sheet.
Does BUK652R6-40C have automotive qualification?
Yes, the BUK652R6-40C is AEC-Q101 qualified and designed specifically for high-performance automotive applications. It meets the stress test requirements for temperature cycling, humidity, mechanical shock, and high-temperature operating life. The device is rated for junction temperatures up to 175 °C and is used in electric power steering, transmission control, and start-stop systems - all confirmed in Section 1.1 and Table 4 of the official BUK652R6-40C datasheet.
What package type does BUK652R6-40C use and how is thermal management implemented?
The BUK652R6-40C uses the SOT78A (TO-220AB) package - a plastic single-ended package with a metal mounting base electrically connected to the drain. Thermal management relies on direct bolting of the mounting base to an external heatsink, achieving a low Rth(j-mb) of 0.57 K/W. This configuration is essential for dissipating up to 263 W total power at Tmb = 25 °C, as defined in Figure 2 and Table 5 of the BUK652R6-40C datasheet.
BUK652R6-40C,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 199 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11334 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 263W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK652R6-40C,127 FAQ
1.How can I place an order for BUK652R6-40C,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK652R6-40C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK652R6-40C,127 reliable?
The price and inventory of BUK652R6-40C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK652R6-40C,127 is usually 5 days.
3.What payment methods are accepted for BUK652R6-40C,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK652R6-40C,127 transactions.
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4.How is shipping managed for BUK652R6-40C,127?
BUK652R6-40C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK652R6-40C,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK652R6-40C,127?
For technical support, including BUK652R6-40C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK652R6-40C,127 requirements.
6.How does Aetrix verify that BUK652R6-40C,127 is sourced from the original manufacturer or authorized distributors?
All BUK652R6-40C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK652R6-40C,127 meets industry standards.
7.What is the process for return or replacement of BUK652R6-40C,127?
All BUK652R6-40C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK652R6-40C,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK652R6-40C,127 part is unused and in its original packaging.
Return procedure for BUK652R6-40C,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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