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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK652R7-30C,127

Name: BUK652R7-30C,127
Brand: NXP Semiconductors
SKU: BUK652R7-30C,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK652R7-30C,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK652R7-30C,127.pdf

Description:: MOSFET N-CH 30V 100A TO220AB

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Product details

Overview

BUK652R7-30C from NXP Semiconductors is an AEC Q101-qualified N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for intermediate-level gate drive in automotive power switching. It delivers 100 A continuous drain current at 25 °C mounting base temperature, features 2.72 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, and supports 30 V drain-source voltage with 175 °C maximum junction temperature - enabling use in electric power steering and Start-Stop micro-hybrid systems.

For engineers reviewing the BUK652R7-30C datasheet, BUK652R7-30C pinout, BUK652R7-30C application, or BUK652R7-30C equivalent, key selection considerations include its 3.3 mΩ max R_DS(on) at 10 V drive, 501 mJ non-repetitive avalanche energy rating, thermal resistance of 0.74 K/W (junction-to-mounting-base), and suitability for thermally demanding 12 V automotive subsystems requiring high-current, low-loss switching.

Technical Context

This device employs advanced TrenchMOS technology to achieve low on-resistance and robust avalanche ruggedness. Its gate threshold voltage ranges from 1.8 V to 2.8 V at 25 °C, enabling reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining stable operation across -55 °C to 175 °C junction temperatures.

The integrated source-drain diode exhibits 0.8–1.2 V forward voltage at 25 A and 25 °C, with 50 ns reverse recovery time and 73 nC recovered charge - supporting synchronous rectification and freewheeling in inductive load control. Its dynamic characteristics include 114 nC total gate charge and 33.3 nC gate-drain charge at V_GS = 10 V, defining switching speed and driver sizing requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - defines safe operating voltage ceiling for 12 V automotive battery-supplied circuits with transient spikes.
I_D (continuous)	100 A at T_mb = 25 °C - enables high-power motor and solenoid control without external parallel devices.
R_DS(on)	2.72 mΩ typical at V_GS = 10 V, T_j = 25 °C - minimizes conduction loss and heat generation in high-current paths.
P_tot	204 W at T_mb = 25 °C - reflects package-limited power handling with heatsink mounting.
T_j max	175 °C - allows operation in under-hood environments where ambient temperatures exceed 100 °C.
E_AS	501 mJ non-repetitive avalanche energy - provides robustness against inductive switching transients in transmission and steering actuators.
R_th(j-mb)	0.74 K/W - quantifies thermal path efficiency from die to heatsink, critical for thermal design margin in sealed enclosures.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain. Features 3 leads and one mounting hole; mounting base serves as primary thermal and electrical connection point.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V logic-level drive; threshold voltage 1.8–2.8 V ensures compatibility with standard microcontroller GPIOs.
2 (D)	Drain	Main high-side power output node; electrically and thermally tied to mounting base for efficient heat transfer to heatsink.
3 (S)	Source	Power return path; referenced to system ground in low-side switch configurations; carries full load current.
Mounting base (mb)	Drain connection	Integral metal tab bonded to drain; must be electrically isolated from chassis unless circuit topology requires common-drain configuration.

Key Features

Feature	Design Value
AEC Q101 qualification	Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock - required for safety-critical power steering and transmission modules.
175 °C junction rating	Enables uninterrupted operation in engine bay locations where ambient exceeds 125 °C, eliminating need for derating or forced cooling in many applications.
2.72 mΩ R_DS(on) @ 10 V	Reduces I²R losses by >40% versus comparable 5 mΩ devices, lowering thermal stress and improving system efficiency in 100 A loads.
501 mJ avalanche energy	Withstands unclamped inductive kickback from 100 A solenoids or motors without failure - eliminates need for external snubbers in space-constrained designs.
TO-220AB thermal performance	0.74 K/W junction-to-mounting-base resistance enables >150 W dissipation with standard 10 K/W heatsink - simplifies thermal management vs. surface-mount alternatives.

Applications

Electric Power Steering (EPS)	Start-Stop Micro-Hybrid Systems
Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules exposed to under-hood temperatures up to 150 °C. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET controlling motor winding current with precise PWM timing and fast fall time (113 ns). Use Value: 2.72 mΩ R_DS(on) minimizes resistive heating during sustained 80 A assist pulses, while 175 °C rating prevents thermal shutdown during peak torque events.	Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-current power switch managing bidirectional energy flow between starter, battery, and regenerative braking circuits. Use Value: 501 mJ avalanche ruggedness absorbs inductive energy from starter coil de-energization, eliminating external clamping diodes and reducing BOM count.
Transmission Control Solenoids	12 V Automotive Lamp Drivers
Use Scenario: Driving electro-hydraulic pressure control solenoids in automatic transmissions subjected to vibration, oil immersion, and wide temperature swings. IC Role / Device Role / Timing Role: Intermediate-level gate drive FET delivering precise current regulation via PWM-controlled on-resistance. Use Value: 100 A continuous rating supports multiple solenoids per channel; AEC Q101 qualification ensures long-term reliability in harsh transmission fluid environments.	Use Scenario: Switching high-intensity LED headlamps and matrix lighting arrays requiring rapid dimming and fault protection. IC Role / Device Role / Timing Role: High-efficiency power switch enabling pulse-width modulation at >1 kHz with minimal switching loss. Use Value: 114 nC total gate charge enables fast turn-on/turn-off with standard gate drivers; 33.3 nC Q_GD limits Miller-induced shoot-through risk during commutation.

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules exposed to under-hood temperatures up to 150 °C.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET controlling motor winding current with precise PWM timing and fast fall time (113 ns).

Use Value: 2.72 mΩ R_DS(on) minimizes resistive heating during sustained 80 A assist pulses, while 175 °C rating prevents thermal shutdown during peak torque events.

Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current power switch managing bidirectional energy flow between starter, battery, and regenerative braking circuits.

Use Value: 501 mJ avalanche ruggedness absorbs inductive energy from starter coil de-energization, eliminating external clamping diodes and reducing BOM count.

Transmission Control Solenoids

12 V Automotive Lamp Drivers

Use Scenario: Driving electro-hydraulic pressure control solenoids in automatic transmissions subjected to vibration, oil immersion, and wide temperature swings.

IC Role / Device Role / Timing Role: Intermediate-level gate drive FET delivering precise current regulation via PWM-controlled on-resistance.

Use Value: 100 A continuous rating supports multiple solenoids per channel; AEC Q101 qualification ensures long-term reliability in harsh transmission fluid environments.

Use Scenario: Switching high-intensity LED headlamps and matrix lighting arrays requiring rapid dimming and fault protection.

IC Role / Device Role / Timing Role: High-efficiency power switch enabling pulse-width modulation at >1 kHz with minimal switching loss.

Use Value: 114 nC total gate charge enables fast turn-on/turn-off with standard gate drivers; 33.3 nC Q_GD limits Miller-induced shoot-through risk during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A, 1.4 mΩ R_DS(on), PowerFLAT 5x6 package - lower R_DS(on) but surface-mount only, no mounting base.	Requires PCB copper area for thermal dissipation; unsuitable for through-hole heatsink mounting or high-vibration environments.	Select when board space is constrained and thermal interface uses soldered copper, not mechanical heatsinks.
IRF1404ZPBF	40 V, 202 A, 3.7 mΩ R_DS(on), TO-220AB - higher voltage rating but 37% higher on-resistance and no AEC Q101 qualification.	Lacks automotive qualification; limited to industrial or commercial 12 V systems without functional safety requirements.	Select only for non-automotive applications where 40 V headroom is needed and AEC compliance is unnecessary.

Compared with STL220N3LLH6 and IRF1404ZPBF, the BUK652R7-30C uniquely combines AEC Q101 qualification, 175 °C operation, and TO-220AB mechanical robustness - making it the only option qualified for direct replacement in production automotive power steering and transmission control modules.

Availability

BUK652R7-30C is available at Aetrix Electronics and suitable for electric power steering, Start-Stop micro-hybrid systems, and transmission control applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK652R7-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK652R7-30C belongs to NXP's TrenchMOS automotive power FET product line, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems such as steering, braking, and transmission control.

FAQ

What is the maximum continuous drain current rating for the BUK652R7-30C?

The BUK652R7-30C supports 100 A continuous drain current at a mounting base temperature of 25 °C, as specified in Figure 1 of the datasheet. This rating is package-limited and decreases with rising mounting base temperature - at 100 °C, it remains 100 A due to thermal design margins, but further derating applies above that point per the normalized curve.

Is the BUK652R7-30C suitable for 5 V gate drive applications?

Yes, the BUK652R7-30C operates with 5 V gate drive: its R_DS(on) is 11.1–13 mΩ at V_GS = 5 V and ID = 15 A, T_j = 25 °C. However, for optimal efficiency in high-current applications, 10 V drive is recommended to achieve 2.72 mΩ typical on-resistance - confirmed in Table 6 of the datasheet.

Does the BUK652R7-30C have integrated avalanche protection?

The BUK652R7-30C is rated for 501 mJ non-repetitive drain-source avalanche energy (E_AS) under defined test conditions (ID = 100 A, V_sup ≤ 30 V, R_GS = 50 Ω). This capability is inherent to its silicon structure and layout, not an added circuit - enabling robust operation during inductive load switching without external protection components.

What is the thermal resistance from junction to mounting base for the BUK652R7-30C?

The BUK652R7-30C has a maximum thermal resistance of 0.74 K/W from junction to mounting base (R_th(j-mb)), as specified in Table 5. This value assumes proper mechanical mounting with thermal interface material and adequate heatsink contact - critical for maintaining T_j ≤ 175 °C under full 100 A load.

Can the BUK652R7-30C be used in high-frequency PWM applications?

Yes, the BUK652R7-30C supports high-frequency PWM with 22 ns turn-on delay, 59 ns rise time, 209 ns turn-off delay, and 113 ns fall time (Table 6). Its 114 nC total gate charge at V_GS = 10 V defines driver strength requirements - a 1 A peak gate driver can switch it fully in ~114 ns, enabling efficient operation up to several hundred kHz.

BUK652R7-30C,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 204W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK652R7-30C,127 FAQ

1.How can I place an order for BUK652R7-30C,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK652R7-30C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK652R7-30C,127 reliable?

The price and inventory of BUK652R7-30C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK652R7-30C,127 is usually 5 days.

3.What payment methods are accepted for BUK652R7-30C,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK652R7-30C,127 transactions.

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4.How is shipping managed for BUK652R7-30C,127?

BUK652R7-30C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK652R7-30C,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK652R7-30C,127?

For technical support, including BUK652R7-30C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK652R7-30C,127 requirements.

6.How does Aetrix verify that BUK652R7-30C,127 is sourced from the original manufacturer or authorized distributors?

All BUK652R7-30C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK652R7-30C,127 meets industry standards.

7.What is the process for return or replacement of BUK652R7-30C,127?

All BUK652R7-30C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK652R7-30C,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK652R7-30C,127 part is unused and in its original packaging.

Return procedure for BUK652R7-30C,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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