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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK653R3-30C,127

Name: BUK653R3-30C,127
Brand: Nexperia USA Inc.
SKU: BUK653R3-30C,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK653R3-30C,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK653R3-30C,127.pdf

Description:: MOSFET N-CH 30V 100A TO220AB

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Product details

Overview

BUK653R3-30C from NXP Semiconductors is an AEC-Q101-qualified N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for automotive power switching. It delivers 30 V V_DS, 2.72 mΩ R_DS(on) @ 10 V_GS/25 A/25 °C, 100 A continuous drain current at T_mb = 25 °C, and 175 °C junction rating-enabling high-current motor, solenoid, and transmission control in 12 V systems.

For engineers reviewing the BUK653R3-30C datasheet, BUK653R3-30C pinout, BUK653R3-30C application, or BUK653R3-30C equivalent, this part supports thermally demanding automotive subsystems requiring robust avalanche energy handling (501 mJ), logic-level gate drive compatibility, and stable performance across -55 °C to +175 °C operating range.

Technical Context

This intermediate-level gate drive MOSFET uses NXP's TrenchMOS technology to achieve low on-resistance while maintaining ruggedness for automotive transients. Its gate threshold voltage (1.8–2.8 V @ 25 °C) enables reliable turn-on with both standard (10 V) and logic-level (4.5–5 V) gate drivers, and its 0.74 K/W junction-to-mounting-base thermal resistance supports high-power dissipation when heatsink-mounted.

The device integrates a source-drain diode with 0.8–1.2 V forward voltage and 50 ns reverse recovery time, enabling freewheeling in inductive loads. Its dynamic characteristics-including 114 nC total gate charge and 33.3 nC gate-drain charge-define switching speed and driver sizing requirements for PWM-controlled power stages in electric power steering and start-stop systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe operation in 12 V automotive battery systems with load dump transients.
R_DS(on)	2.72 mΩ typical @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 50 A, critical for thermal management in compact modules.
I_D (continuous)	100 A @ T_mb = 25 °C - limited by TO-220AB package; requires heatsinking for sustained high-current operation.
E_AS	501 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events without failure in motor control applications.
T_j max	175 °C maximum junction temperature - supports operation in engine bay and transmission control environments.
R_th(j-mb)	0.74 K/W thermal resistance junction-to-mounting base - enables efficient heat transfer to external heatsink, reducing thermal derating.
Q_G(tot)	114 nC total gate charge @ V_DS = 24 V, V_GS = 10 V - determines gate driver current and switching loss in high-frequency PWM designs.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain. Requires mechanical mounting via single hole; leads are tinned except in designated terminal zone.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; accepts 4.5–10 V logic-level or standard gate drive; threshold 1.8–2.8 V ensures reliable turn-on.
2 (D)	Drain	Main high-side power path; electrically tied to mounting base-requires isolation from heatsink unless referenced to system ground.
3 (S)	Source	Power return path and reference for gate drive; internal source inductance 7.5 nH affects high-speed switching behavior.
Mounting Base (mb)	Drain connection	Integral drain terminal; provides primary thermal path to heatsink-must be electrically isolated if drain is not at chassis ground.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test requirements-ensures reliability in safety-critical power steering and transmission control.
Logic-level gate drive support	R_DS(on) = 3.9 mΩ @ V_GS = 4.5 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry.
High-temperature operation	Rated to 175 °C junction temperature-maintains stable R_DS(on) up to 6.3 mΩ at 175 °C, supporting under-hood deployment.
Low gate charge	Q_GD = 33.3 nC minimizes Miller effect during switching-reduces risk of shoot-through and eases gate driver selection.
Integrated source-drain diode	V_SD = 0.8–1.2 V @ 25 A and t_rr = 50 ns enable efficient freewheeling in inductive motor/solenoid loads without external diode.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: High-current H-bridge motor driver for assist torque generation in 12 V EPS modules.

IC Role / Device Role / Timing Role: Main power switch controlling bidirectional 3-phase motor current; operates in PWM mode at 10–20 kHz.

Use Value: Low R_DS(on) and 175 °C rating minimize thermal derating in confined steering column enclosures; avalanche ruggedness handles motor regeneration spikes.

Use Scenario: Starter motor engagement/disengagement and battery load management during engine restart cycles.

IC Role / Device Role / Timing Role: High-side power switch for starter solenoid and auxiliary loads; activated for <500 ms bursts.

Use Value: 100 A continuous rating and 721 A peak current capability ensure reliable cranking under cold-start conditions; AEC-Q101 compliance guarantees lifecycle durability.

Transmission Control Valves

12 V Automotive Lighting & Lamp Drivers

Use Scenario: PWM-driven electro-hydraulic valve actuation in automatic transmission shift control units.

IC Role / Device Role / Timing Role: Low-side switch modulating 12 V supply to proportional solenoids; duty cycle adjusted for precise hydraulic pressure.

Use Value: Fast 113 ns fall time and low Q_G enable accurate current regulation; integrated diode suppresses back-EMF without external components.

Use Scenario: High-brightness LED headlamp and daytime running light (DRL) current regulation in body control modules.

IC Role / Device Role / Timing Role: Constant-current switch in buck or linear LED driver topology; operated at 100–1000 Hz PWM.

Use Value: 30 V V_DS accommodates automotive load dump transients; 2.72 mΩ R_DS(on) limits self-heating in space-constrained lamp housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 2.2 mΩ R_DS(on), PowerFLAT 5x6 package, no mounting base; 175 °C rated but not AEC-Q101 qualified.	Suitable for PCB-space-constrained non-safety-critical loads; lacks TO-220AB thermal mass and automotive qualification.	Select only for cost-sensitive, non-AEC applications where surface-mount assembly and lower R_DS(on) outweigh qualification needs.
IRF1404ZPBF	40 V, 4.7 mΩ R_DS(on), TO-220AB, industrial-grade (not AEC-Q101); higher V_DS, higher on-resistance, lower temperature rating (175 °C but not qualified).	Acceptable for 12 V general-purpose switching where automotive reliability is not mandated; less suitable for EPS or transmission control.	Choose only for legacy industrial designs; avoid in new automotive programs due to missing AEC-Q101 validation and inferior thermal performance.

Compared with STL220N3LLH6 and IRF1404ZPBF, the BUK653R3-30C uniquely combines AEC-Q101 qualification, TO-220AB heatsink-mounting capability, and sub-3 mΩ on-resistance-making it the only option validated for thermally aggressive, safety-relevant automotive power switching where qualification, thermal design flexibility, and conduction efficiency are jointly required.

Availability

BUK653R3-30C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control requiring stable component supply across automotive production lifecycles.

Supply support for BUK653R3-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK653R3-30C belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability, high-current switching in 12 V vehicle subsystems-emphasizing AEC-Q101 compliance, thermal resilience, and robustness against automotive electrical transients.

FAQ

Is BUK653R3-30C suitable for logic-level gate drive without a gate driver IC?

Yes. With a gate threshold voltage of 1.8–2.8 V and R_DS(on) = 3.9 mΩ @ V_GS = 4.5 V, it fully turns on using standard 3.3 V or 5 V microcontroller outputs. However, for high-frequency PWM or high-current switching, a dedicated gate driver is recommended to manage 114 nC total gate charge and minimize switching losses.

What is the maximum continuous drain current at 100 °C mounting base temperature?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C and also confirms 100 A at T_mb = 100 °C under V_GS = 10 V. This reflects the device's ability to sustain full rated current even at elevated heatsink temperatures, enabled by its 0.74 K/W R_th(j-mb) and 175 °C T_j rating.

Can BUK653R3-30C replace older NXP BUK7 series devices in existing designs?

It can replace BUK7Y3R3-30B and BUK7Y3R3-40B in many cases due to identical TO-220AB package, matching pinout, and improved R_DS(on) (2.72 mΩ vs. 3.3 mΩ). However, verify gate charge (114 nC vs. ~90 nC) and avalanche energy (501 mJ vs. 350–400 mJ) to ensure driver and transient protection circuits remain adequate.

Does the mounting base require electrical isolation when used in high-side configurations?

Yes. The mounting base is internally connected to the drain terminal. In high-side switch configurations where the drain is at battery potential, the heatsink must be electrically isolated from chassis ground using insulating pads or shoulder washers to prevent short circuits and ensure safe operation.

BUK653R3-30C,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 204W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK653R3-30C,127 FAQ

1.How can I place an order for BUK653R3-30C,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK653R3-30C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK653R3-30C,127 reliable?

The price and inventory of BUK653R3-30C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK653R3-30C,127 is usually 5 days.

3.What payment methods are accepted for BUK653R3-30C,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK653R3-30C,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK653R3-30C,127?

BUK653R3-30C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK653R3-30C,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK653R3-30C,127?

For technical support, including BUK653R3-30C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK653R3-30C,127 requirements.

6.How does Aetrix verify that BUK653R3-30C,127 is sourced from the original manufacturer or authorized distributors?

All BUK653R3-30C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK653R3-30C,127 meets industry standards.

7.What is the process for return or replacement of BUK653R3-30C,127?

All BUK653R3-30C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK653R3-30C,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK653R3-30C,127 part is unused and in its original packaging.

Return procedure for BUK653R3-30C,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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