My Inquiry
My Account
Nexperia USA Inc. BUK6607-75C,118
- Part No.:
- BUK6607-75C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK6607-75C,118.pdf
- Description:
- MOSFET N-CH 75V 100A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,111
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK6607-75C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 75 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 6 mΩ RDS(on) @ VGS = 10 V, Tj = 25 °C, enabling high-efficiency motor and solenoid control in 12 V/24 V systems.
For engineers reviewing the BUK6607-75C,118 datasheet, BUK6607-75C,118 pinout, BUK6607-75C,118 application, or BUK6607-75C,118 equivalent, key selection criteria include its 175 °C junction rating, avalanche ruggedness (191 mJ), thermal resistance (0.74 K/W), and suitability for thermally demanding start-stop micro-hybrid and electric power steering circuits.
Technical Context
This device uses advanced TrenchMOS technology to achieve low on-resistance and fast switching with QG(tot) = 123 nC and td(off) = 247 ns. Its gate threshold voltage (VGS(th)) ranges from 1.8 V to 2.8 V at 25 °C, supporting robust turn-on with standard 5 V or 10 V logic-level drivers.
The integrated source-drain diode exhibits VSD = 0.8–1.2 V @ IS = 25 A and trr = 54 ns, enabling efficient freewheeling in inductive loads. Thermal design is anchored by Rth(j-mb) = 0.74 K/W and a mounting-base–referenced power dissipation curve up to 204 W at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage compatible with 24 V automotive battery transients and load-dump conditions. |
| ID (continuous) | 100 A @ Tmb = 25 °C - Supports high-current motor and lamp loads without external heatsinking at ambient-mount conditions. |
| RDS(on) | 6 mΩ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.5 W conduction loss at 50 A, critical for thermal management in compact ECUs. |
| EAS | 191 mJ (unclamped) - Withstands single-pulse inductive energy spikes common in solenoid and transmission valve switching. |
| Tj max | 175 °C - Qualified for under-hood operation in engine bay and powertrain modules per AEC-Q101 stress testing. |
| Rth(j-mb) | 0.74 K/W - Direct thermal path to PCB or heatsink enables predictable junction temperature estimation using mounting base temperature. |
| QG(tot) | 123 nC @ VDS = 60 V, VGS = 10 V - Determines gate driver current requirement (~12 mA avg. for 10 µs turn-on). |
Pinout & Package
Package: D2PAK (SOT404), plastic surface-mounted package with isolated mounting base connected to drain. Optimized for high-power thermal transfer via soldered base plate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤16 V DC or 20 V pulsed drive; input capacitance Ciss = 5610 pF influences gate drive loop stability. |
| 2 (D) | Drain | Main high-side power terminal; electrically tied to mounting base; carries full load current and dissipates switching/conduction losses. |
| 3 (S) | Source | Power return path and reference for gate drive; internal source inductance LS = 7.5 nH affects high-speed switching ringing. |
| Mounting Base (mb) | Drain Connection | Thermally conductive metal pad soldered to PCB copper; provides primary heat path and electrical connection to drain node. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive reliability including temperature cycling, humidity, and mechanical shock per Grade 1 requirements. |
| 175 °C junction rating | Enables operation in engine compartment environments where ambient temperatures exceed 125 °C, reducing derating overhead. |
| Low RDS(on) × QG figure of merit | 6 mΩ × 123 nC = 738 mΩ·nC - Balances conduction efficiency and switching speed for 10–100 kHz PWM motor drives. |
| Unclamped avalanche capability | 191 mJ EAS allows safe operation without external snubbers in inductive load switching, simplifying board layout. |
| Integrated body diode | VSD = 0.8–1.2 V and trr = 54 ns support bidirectional current handling in H-bridge and regenerative braking applications. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Systems |
|---|---|
|
Use Scenario: High-current MOSFET switch controlling 12 V brushless EPS motor phase windings during torque assist. IC Role / Device Role / Timing Role: Low-side or high-side power switch in three-phase inverter bridge; handles 50–80 A peak currents with <100 ns switching transitions. Use Value: 6 mΩ RDS(on) minimizes resistive heating during sustained assist, while 175 °C rating ensures reliability near steering column heat sources. |
Use Scenario: Controlling starter motor engagement and battery disconnect during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-current load switch managing >60 A cranking pulses and steady-state accessory loads between engine cycles. Use Value: 191 mJ avalanche energy absorbs inductive kickback from starter solenoid coil, eliminating need for external TVS protection. |
| Transmission Control Valves | LED Headlamp Dimming |
|
Use Scenario: Driving electro-hydraulic solenoid valves in automatic transmission shift actuators requiring precise PWM current regulation. IC Role / Device Role / Timing Role: Intermediate gate-drive MOSFET switched at 1–20 kHz to modulate solenoid current and hydraulic pressure response. Use Value: Fast td(off) = 247 ns and low QGD = 35 nC enable tight current-loop control bandwidth and reduce PWM distortion. |
Use Scenario: High-side switching of 24 V LED headlamp arrays with dynamic dimming and fault protection. IC Role / Device Role / Timing Role: Load switch providing overcurrent, overtemperature, and short-circuit protection while delivering up to 100 A peak current. Use Value: AEC-Q101 qualification and 175 °C rating ensure long-term lumen stability and safety compliance in sealed headlamp housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, 1.7 mΩ RDS(on) - lower voltage rating, higher current, smaller DFN package. | Optimized for 12 V-only systems with space-constrained layouts; lacks 75 V margin for 24 V or load-dump scenarios. | Select when board area is critical and system voltage never exceeds 16 V; verify avalanche energy (120 mJ) suffices for solenoid loads. |
| IRF1407PBF | 75 V VDS, 100 A ID, 7.5 mΩ RDS(on) - same voltage/current but higher on-resistance and no AEC-Q101 qualification. | Industrial-grade only; not validated for automotive temperature cycling or vibration; requires additional qualification effort. | Acceptable for non-automotive 24 V industrial motor control where AEC-Q101 is not mandated and 1.5 mΩ higher RDS(on) is tolerable. |
Compared with STL220N4F7AG and IRF1407PBF, BUK6607-75C,118 uniquely combines 75 V rating, AEC-Q101 qualification, and 6 mΩ RDS(on) in a thermally optimized D2PAK package-making it the only drop-in solution for 24 V automotive power switching where reliability, voltage margin, and thermal performance are jointly constrained.
Availability
BUK6607-75C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control applications requiring stable component supply across extended automotive production lifecycles.
Supply support for BUK6607-75C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in automotive-qualified MOSFETs and ESD protection.
BUK6607-75C,118 belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, safety-critical 12 V/24 V vehicle subsystems requiring AEC-Q101 compliance and robust avalanche performance.
FAQ
What is the maximum gate-source voltage rating for BUK6607-75C,118?
The absolute maximum DC gate-source voltage is ±16 V, with pulsed rating up to ±20 V for durations ≤5 minutes. Exceeding these limits risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching, especially with high-inductance gate loops.
Can BUK6607-75C,118 be used in parallel configurations?
Yes, but only with careful attention to gate drive matching, current-sharing resistors, and thermal coupling. The device's positive RDS(on) temperature coefficient (RDS(on) rises with Tj) supports inherent current sharing, yet layout asymmetry can cause imbalance. Use identical gate resistor values and symmetrical PCB traces to minimize skew.
Does BUK6607-75C,118 require a gate resistor, and what value is recommended?
A gate resistor is mandatory to control dV/dt and suppress oscillation. For typical 10 V gate drive and 123 nC QG, a 10 Ω resistor yields ~1.2 µs turn-on time and limits peak gate current to ~1 A. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses-optimize based on measured waveforms.
How is thermal performance affected if the mounting base is not soldered to a copper plane?
Without a soldered mounting base, Rth(j-mb) remains 0.74 K/W, but Rth(mb-ambient) increases dramatically-potentially exceeding 20 K/W. This causes junction temperature to rise rapidly under load. Full thermal performance requires ≥100 mm² of 2 oz copper directly under the base, with thermal vias to inner layers, per Nexperia's SOT404 layout guidelines.
BUK6607-75C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 123 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 204W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK6607-75C,118 FAQ
1.How can I place an order for BUK6607-75C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK6607-75C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK6607-75C,118 reliable?
The price and inventory of BUK6607-75C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6607-75C,118 is usually 5 days.
3.What payment methods are accepted for BUK6607-75C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6607-75C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK6607-75C,118?
BUK6607-75C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK6607-75C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK6607-75C,118?
For technical support, including BUK6607-75C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6607-75C,118 requirements.
6.How does Aetrix verify that BUK6607-75C,118 is sourced from the original manufacturer or authorized distributors?
All BUK6607-75C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6607-75C,118 meets industry standards.
7.What is the process for return or replacement of BUK6607-75C,118?
All BUK6607-75C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6607-75C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK6607-75C,118 part is unused and in its original packaging.
Return procedure for BUK6607-75C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK6607-75C,118 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
