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Nexperia USA Inc. BUK6610-75C,118
- Part No.:
- BUK6610-75C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK6610-75C,118.pdf
- Description:
- NEXPERIA BUK6610 - N-CHANNEL TRE
- Quantity:
- Payment:
- Shipping:
Inventory:7,474
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Product details
Overview
BUK6610-75C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 78 A continuous drain current at 25 °C mounting base temperature, 75 V drain-source voltage rating, and 8.6 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C - enabling high-efficiency control of electric power steering motors and start-stop micro-hybrid solenoids.
For engineers reviewing the BUK6610-75C,118 datasheet, BUK6610-75C,118 pinout, BUK6610-75C,118 application, or BUK6610-75C,118 equivalent, key selection criteria include its 175 °C junction-rated thermal robustness, unclamped avalanche energy of 121 mJ, and low-inductance internal layout (LD = 3.5 nH, LS = 7.5 nH) critical for fast-switching 12 V automotive subsystems.
Technical Context
This MOSFET employs advanced TrenchMOS technology to achieve low on-resistance with high avalanche ruggedness. Its gate threshold voltage (VGS(th)) ranges from 0.8 V at 175 °C to 3.3 V at −55 °C, ensuring stable turn-on across automotive temperature extremes. The device integrates a source-drain diode with 0.8–1.2 V forward voltage at 25 A and 50.5 ns reverse recovery time - supporting synchronous rectification and freewheeling in inductive loads.
Thermal design is enabled by a 0.95 K/W junction-to-mounting-base resistance and a D2PAK package optimized for PCB copper pour attachment. Dynamic performance includes 81 nC total gate charge at VGS = 10 V and 30 nC gate-drain charge, balancing switching speed and EMI control in transmission control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V maximum - supports full 12 V automotive battery transients including load dump up to ISO 7637-2 Pulse 5a. |
| ID (continuous) | 78 A at Tmb = 25 °C - enables direct drive of high-current solenoids and EPS motor phases without external gate drivers. |
| RDS(on) | 8.6 mΩ typ. at VGS = 10 V, ID = 25 A, Tj = 25 °C - reduces conduction loss to ≤2.1 W at 50 A, easing thermal management. |
| EAS | 121 mJ non-repetitive avalanche energy - sustains single-event inductive kickback from 78 A coil currents without failure. |
| Tj max | 175 °C - qualified per AEC-Q101 for under-hood operation in engine bay and transmission control units. |
| QG(tot) | 81 nC at VGS = 10 V - determines gate driver power requirement (~0.81 mW per 10 kHz switching cycle). |
| Rth(j-mb) | 0.95 K/W - allows ≥150 W power dissipation with 142.5 °C ΔT to mounting base, assuming 32.5 °C ambient + 25 °C heatsink rise. |
Pinout & Package
The BUK6610-75C,118 uses the SOT404 (D2PAK) plastic surface-mount package with isolated mounting base connected to the drain terminal. Its three-terminal layout supports high-current PCB routing and thermal coupling to heatsinks via the exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement; gate leakage <100 nA ensures low standby current. |
| 2 (D) | Drain | Main high-side power path; electrically tied to mounting base for low-inductance heat sinking and current return. |
| 3 (S) | Source | Power return node; referenced to gate drive; internal source inductance of 7.5 nH limits dI/dt-induced shoot-through risk. |
| Mounting base | Drain connection | Exposed copper pad soldered to PCB thermal plane; provides primary thermal path and contributes to low RDS(on) stability. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock - required for EPS and transmission control ECUs. |
| 175 °C junction rating | Enables operation in under-hood environments where ambient exceeds 125 °C, eliminating need for derating in high-temperature zones. |
| Low RDS(on) × QG figure-of-merit | 690 Ω·nC (8.6 mΩ × 81 nC) - optimizes trade-off between conduction loss and switching loss in 10–100 kHz PWM applications. |
| Unclamped avalanche capability | 121 mJ energy handling - protects against inductive flyback in solenoid and motor phase control without external snubbers. |
| Low internal inductance | LD = 3.5 nH, LS = 7.5 nH - minimizes voltage overshoot during hard switching and improves gate drive waveform fidelity. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge phase leg switching for brushless EPS motor commutation under dynamic torque demand. IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration; handles bidirectional 70+ A peak currents with <100 ns switching transitions. Use Value: 8.6 mΩ RDS(on) limits resistive heating during sustained assist, while 175 °C rating prevents thermal shutdown during parking maneuvers. |
Use Scenario: Controlled engagement/disengagement of starter motor and ISG (integrated starter-generator) in 12 V micro-hybrid systems. IC Role / Device Role / Timing Role: High-side load switch managing 60–100 A cranking pulses with precise timing to synchronize engine restart. Use Value: 121 mJ avalanche energy absorbs inductive kickback from solenoid coils during rapid de-energization, preventing gate oxide stress. |
| Engine Management Solenoids | Automatic Transmission Valve Control |
|
Use Scenario: Driving fuel injector, EGR, and turbocharger VGT solenoids requiring fast, repeatable actuation at 12 V. IC Role / Device Role / Timing Role: Low-side switch with integrated freewheeling diode; operates in PWM mode at 1–10 kHz with <50 ns fall time. Use Value: 50.5 ns reverse recovery time and 105 nC recovered charge minimize switching losses and diode conduction overlap in high-duty-cycle operation. |
Use Scenario: Precision pressure modulation of hydraulic clutch and brake bands in 6/8-speed automatic transmissions. IC Role / Device Role / Timing Role: Current-regulated switch controlling proportional solenoid current (0–2 A) with closed-loop feedback. Use Value: Gate threshold stability (1.8–2.8 V at 25 °C) ensures consistent turn-on across wide temperature range, reducing calibration drift in valve position control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, TO-263 package; lower RDS(on) (1.6 mΩ) but insufficient for 75 V load dump. | Only suitable for 5–24 V systems with strict voltage clamping; not rated for 12 V automotive transients. | Select only if system voltage is capped below 45 V and peak current exceeds 150 A. |
| IRF1404ZLPbF | 40 V VDS, 180 A ID, TO-220AB; higher RDS(on) (3.7 mΩ) but lacks AEC-Q101 qualification and 175 °C rating. | Not qualified for automotive use; limited to industrial or consumer applications with ambient <105 °C. | Acceptable for cost-sensitive non-automotive 12 V switching where qualification and extended temperature are not required. |
Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK6610-75C,118 uniquely combines 75 V rating, AEC-Q101 compliance, and 175 °C operation - making it the only drop-in solution for safety-critical 12 V automotive power stages requiring transient immunity and long-term reliability.
Availability
BUK6610-75C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and automatic transmission valve actuation requiring stable component supply across automotive production lifecycles.
Supply support for BUK6610-75C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK6610-75C,118 belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, safety-critical 12 V power switching in engine, chassis, and body control modules.
FAQ
What is the maximum allowable gate-source voltage for BUK6610-75C,118?
The absolute maximum DC gate-source voltage is ±16 V, with pulsed rating up to ±20 V for durations not exceeding 5 minutes. Exceeding these limits risks permanent gate oxide damage. Recommended operating VGS is 10 V for full enhancement, with 4.5 V sufficient for 25 A at 25 °C (RDS(on) = 10.4 mΩ).
Can BUK6610-75C,118 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (increases with junction temperature) enables inherent current sharing. At 175 °C, RDS(on) rises to 26 mΩ (vs. 8.6 mΩ at 25 °C), promoting thermal stability. Use matched gate drive paths and symmetrical PCB layout to minimize imbalance.
Does BUK6610-75C,118 include an integrated body diode?
Yes - it features a monolithic source-drain diode with 0.8–1.2 V forward voltage at 25 A and 50.5 ns reverse recovery time. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification due to Qr = 105 nC.
What thermal interface material is recommended for the mounting base?
A thermally conductive, electrically insulating pad (e.g., Bergquist Sil-Pad 2000) or solder paste (e.g., Indium8.9HF) is recommended. Thermal resistance from junction to mounting base is 0.95 K/W; achieving ≤1.2 K/W system-level Rth(j-a) requires ≥10 cm² 2 oz copper pour with 6+ thermal vias under the pad.
BUK6610-75C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5251 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 158W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK6610-75C,118 FAQ
1.How can I place an order for BUK6610-75C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK6610-75C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK6610-75C,118 reliable?
The price and inventory of BUK6610-75C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6610-75C,118 is usually 5 days.
3.What payment methods are accepted for BUK6610-75C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6610-75C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK6610-75C,118?
BUK6610-75C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK6610-75C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK6610-75C,118?
For technical support, including BUK6610-75C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6610-75C,118 requirements.
6.How does Aetrix verify that BUK6610-75C,118 is sourced from the original manufacturer or authorized distributors?
All BUK6610-75C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6610-75C,118 meets industry standards.
7.What is the process for return or replacement of BUK6610-75C,118?
All BUK6610-75C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6610-75C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK6610-75C,118 part is unused and in its original packaging.
Return procedure for BUK6610-75C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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