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Nexperia USA Inc. BUK661R6-30C,118

Part No.:
BUK661R6-30C,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK661R6-30C,118.pdf
Description:
MOSFET N-CH 30V 120A D2PAK
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Inventory:1

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Product details

Overview

BUK661R6-30C from Nexperia is an N-channel TrenchMOS FET engineered for intermediate-level gate drive in automotive power switching, featuring 30 V VDS, 1.4 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 120 A continuous drain current at Tmb = 25 °C, and AEC-Q101 qualification for 175 °C junction operation - deployed in electric power steering and start-stop micro-hybrid control modules.

For engineers reviewing the BUK661R6-30C datasheet, BUK661R6-30C pinout, BUK661R6-30C application, or BUK661R6-30C equivalent, key selection criteria include thermal resistance (Rth(j-mb) = 0.49 K/W), avalanche energy rating (1.707 J), gate charge profile (QG(tot) = 229 nC), and D2PAK package mounting base thermal interface requirements.

Technical Context

This device implements a trench-gate MOSFET architecture optimized for low conduction loss and robust switching in thermally constrained 12 V automotive systems. Its gate threshold voltage (VGS(th) = 1.8–2.8 V at Tj = 25 °C) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its 175 °C maximum junction temperature supports operation in engine bay environments.

The integrated source-drain diode exhibits VSD = 0.8–1.2 V at IS = 25 A and Tj = 25 °C, with trr = 70 ns and Qr = 0.138 nC, supporting freewheeling in inductive load control. Dynamic parameters - including QGD = 63 nC and Ciss = 11.2–14.9 pF - are specified under standardized 24 V VDS, 25 A ID conditions to enable accurate SOA and snubber design.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems with load dump transients.
RDS(on) 1.4 mΩ (typ.) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for high-efficiency motor control.
ID (cont.) 120 A at Tmb = 25 °C - Continuous current rating limited by D2PAK package thermal capacity, not die capability.
EAS 1.707 J (non-repetitive) - Specifies single-pulse avalanche ruggedness under unclamped inductive switching, enabling robust fault handling.
Rth(j-mb) 0.49 K/W - Junction-to-mounting-base thermal resistance defines minimum heatsink requirement for 175 °C Tj operation.
QG(tot) 229 nC at VDS = 24 V, ID = 25 A - Total gate charge determines driver strength needed for <1 µs switching transitions.
td(on)/tf 53 ns / 192 ns - Turn-on delay and fall time values measured at VGS = 10 V, RG(ext) = 10 Ω, defining hard-switching timing budget.

Pinout & Package

Supplied in SOT404 (D2PAK) plastic surface-mount package with isolated mounting base connected to drain. Thermal performance relies on direct metal-to-heatsink contact via the exposed drain pad.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal requiring ≤20 V pulsed/≤16 V DC gate-source voltage; 229 nC total charge demands capable driver IC.
2 (D) Drain Main high-side power terminal; electrically tied to mounting base - must be thermally coupled to heatsink without electrical isolation.
3 (S) Source Power return path and reference for gate drive; internal source inductance (LS = 7.5 nH) affects high-speed switching stability.
Mounting Base (mb) Drain Connection Exposed copper pad soldered to PCB thermal plane; provides primary thermal path (0.49 K/W) and carries full drain current.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC-Q101 Rev G - required for safety-critical EPS and transmission control.
175 °C maximum junction temperature Enables operation in under-hood locations without derating at ambient up to 125 °C when properly heatsinked via mounting base.
Low RDS(on) with 4.5 V drive 2.1 mΩ (typ.) at VGS = 4.5 V, ID = 25 A - supports direct interface with 5 V microcontrollers without level-shifting.
High avalanche energy rating 1.707 J non-repetitive EAS - allows safe clamping of inductive kickback in solenoid and motor control without external TVS.
Optimized dynamic characteristics QGD/QG ratio of ~27% and Crss/Ciss of ~13% - improves Miller immunity and enables stable high-frequency PWM in BLDC inverters.

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Control

Use Scenario: High-current H-bridge motor driver controlling 12 V brushless steering assist motor during parking maneuvers.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in dual-phase inverter topology; handles 100+ A peak currents with <100 ns switching transitions.

Use Value: 1.4 mΩ RDS(on) reduces conduction loss by >40% versus comparable 2.5 mΩ devices, extending battery range per assist cycle.

Use Scenario: Intelligent starter relay replacement managing crank battery engagement and regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Main power switch isolating starter motor from battery during coasting; rated for 1310 A peak surge current.

Use Value: 1.707 J avalanche energy withstands repeated inductive turn-off spikes from starter solenoid coil without degradation.

Transmission Valve Control LED Headlamp Dimming

Use Scenario: PWM-driven proportional solenoid valve actuator regulating hydraulic pressure in 8-speed automatic transmissions.

IC Role / Device Role / Timing Role: High-side switch operating at 20–200 Hz PWM with precise duty-cycle control; requires stable RDS(on) across -40 to 175 °C.

Use Value: RDS(on) variation of only 2.3× from 25 °C to 175 °C ensures consistent current delivery and valve position accuracy.

Use Scenario: High-brightness LED matrix dimming circuit in adaptive front lighting systems (AFS), switching 5–15 A per channel.

IC Role / Device Role / Timing Role: Low-loss series pass switch enabling >10 kHz PWM dimming with minimal thermal rise on compact PCBs.

Use Value: 0.49 K/W Rth(j-mb) allows 120 A-rated device to dissipate 8 W at <30 °C rise - sufficient for 15 A LED loads without external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N3LLH6 30 V, 220 A, RDS(on) = 1.1 mΩ @ 10 V but uses LFPAK56 package with higher Rth(j-mb) (0.75 K/W); no AEC-Q101 documentation publicly available. Higher current rating suits larger EPS motors but requires larger PCB footprint and more aggressive cooling. Select when board space permits larger package and higher peak current is prioritized over thermal interface simplicity.
IRF1405ZPBF 55 V, 169 A, RDS(on) = 3.3 mΩ @ 10 V; TO-220AB package; not AEC-Q101 qualified; lower avalanche rating (0.9 J). Designed for industrial UPS and SMPS - lacks automotive qualification and thermal robustness for under-hood use. Acceptable only for non-automotive 12 V systems where qualification and 175 °C operation are not required.

Compared with STL220N3LLH6 and IRF1405ZPBF, BUK661R6-30C uniquely balances AEC-Q101 compliance, ultra-low RDS(on), D2PAK thermal interface simplicity, and verified 1.707 J avalanche ruggedness - making it the preferred choice for production automotive power stages where qualification, thermal margin, and reliability are non-negotiable.

Availability

BUK661R6-30C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission valve actuation requiring stable component supply across extended automotive product lifecycles.

Supply support for BUK661R6-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with core competencies in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's TrenchMOS automotive power portfolio, designed specifically for thermally demanding 12 V vehicle subsystems requiring AEC-Q101 compliance, low RDS(on), and robust avalanche performance.

FAQ

What is the maximum continuous drain current for BUK661R6-30C at 100 °C mounting base temperature?

The datasheet specifies 120 A continuous drain current at both Tmb = 25 °C and Tmb = 100 °C, with derating governed by Figure 1. This flat rating reflects the device's ability to sustain full current under elevated thermal conditions when mounted on a sufficiently sized heatsink, provided junction temperature remains ≤175 °C.

Does BUK661R6-30C require a gate resistor for safe operation in automotive PWM applications?

Yes - a gate resistor is essential to control dV/dt and prevent oscillation. With QG(tot) = 229 nC and typical driver output impedance, a 10 Ω external resistor is recommended (per Figure 12 test condition) to achieve td(on) = 53 ns and tf = 192 ns while limiting peak gate current to <2 A and suppressing ringing caused by LS = 7.5 nH and LD = 3.5 nH.

Can BUK661R6-30C replace older 40 V automotive MOSFETs in existing 12 V designs?

No - its 30 V VDS rating is insufficient for 12 V systems experiencing ISO 7637-2 pulse 5a (up to 40 V load dump). It is qualified only for applications where maximum transient voltage remains ≤30 V, such as post-regulator stages or circuits with upstream TVS clamping. Use only where system-level overvoltage protection guarantees VDS stays within absolute maximum rating.

How is the mounting base electrically connected, and what PCB layout considerations apply?

The mounting base is internally connected to the drain terminal (Pin 2), forming a low-inductance, high-current path. PCB layout must expose the base pad fully, use ≥3 thermal vias per mm² to inner ground planes, avoid solder mask over the pad, and maintain ≥0.5 mm clearance to adjacent traces - failure to do so risks thermal runaway or voltage breakdown due to the 30 V drain potential on the heatsink interface.

BUK661R6-30C,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
229 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
14964 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
306W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK661R6-30C,118 FAQ

1.How can I place an order for BUK661R6-30C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK661R6-30C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK661R6-30C,118 reliable?

The price and inventory of BUK661R6-30C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK661R6-30C,118 is usually 5 days.

3.What payment methods are accepted for BUK661R6-30C,118?

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4.How is shipping managed for BUK661R6-30C,118?

BUK661R6-30C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK661R6-30C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK661R6-30C,118?

For technical support, including BUK661R6-30C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK661R6-30C,118 requirements.

6.How does Aetrix verify that BUK661R6-30C,118 is sourced from the original manufacturer or authorized distributors?

All BUK661R6-30C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK661R6-30C,118 meets industry standards.

7.What is the process for return or replacement of BUK661R6-30C,118?

All BUK661R6-30C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK661R6-30C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK661R6-30C,118 part is unused and in its original packaging.

Return procedure for BUK661R6-30C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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