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NXP Semiconductors BUK661R6-30C118
- Part No.:
- BUK661R6-30C118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK661R6-30C118.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,109
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Product details
Overview
BUK661R6-30C118 from Nexperia is an N-channel TrenchMOS enhancement-mode power MOSFET in D2PAK (SOT404) package, rated for 30 V drain-source voltage, 120 A continuous drain current at Tmb = 25 °C, and 1.4 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current, intermediate-level gate-drive switch in automotive power control circuits.
For engineers reviewing the BUK661R6-30C118 datasheet, BUK661R6-30C118 pinout, BUK661R6-30C118 application, or BUK661R6-30C118 equivalent, this device is selected for thermally demanding 12 V automotive systems requiring AEC Q101 qualification, low on-resistance, and robust avalanche energy handling (1.707 J non-repetitive).
Technical Context
This MOSFET employs advanced TrenchMOS technology to achieve ultra-low RDS(on) while maintaining stable threshold voltage (VGS(th) = 1.8–2.8 V at 25 °C) and wide junction temperature range (−55 to +175 °C). Its internal drain and source inductances (LD = 3.5 nH, LS = 7.5 nH) are optimized for fast switching with minimal ringing in high-di/dt automotive loads.
The device features a mounting base (mb) electrically connected to the drain terminal, enabling direct thermal coupling to heatsinks. Its safe operating area (SOA) supports peak drain currents up to 1310 A (10 µs pulses) and repetitive avalanche operation limited by average junction temperature of 170 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines absolute upper limit for drain-source blocking in 12 V automotive systems with load-dump transients. |
| RDS(on) | 1.4 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1.5 W conduction loss at 60 A, critical for thermally constrained ECU modules. |
| ID | 120 A continuous at Tmb = 25 °C - package-limited current rating suitable for high-power solenoid and motor drivers. |
| EAS | 1.707 J non-repetitive avalanche energy - ensures robustness against inductive kickback in transmission and power-steering actuators. |
| Rth(j-mb) | 0.49 K/W - allows efficient heat transfer from die to heatsink-mounted PCB, supporting sustained 100+ A operation with proper thermal design. |
| QG(tot) | 229 nC at VGS = 10 V - determines gate driver strength requirement; compatible with standard automotive gate drivers (e.g., UCC27531). |
| VGS(th) | 1.8–2.8 V at Tj = 25 °C - ensures reliable turn-on with standard 3.3 V or 5 V logic-level control signals in microcontroller-based systems. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤10 V drive for full enhancement; gate leakage <100 nA ensures low standby current. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path. |
| 3 (S) | Source | Power return reference; used for current sensing and feedback; source inductance 7.5 nH affects switching waveform fidelity. |
| mb | Mounting Base | Electrically tied to drain; provides mechanical attachment and primary thermal interface to heatsink or copper plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC Q101 qualified | Validated for automotive use per stress test requirements including HTRB, H3TRB, and temperature cycling - enables deployment in safety-critical ECUs without additional qualification. |
| 175 °C maximum junction temperature | Supports operation in under-hood environments (e.g., engine bay, transmission control units) where ambient exceeds 125 °C. |
| Low RDS(on) with VGS = 4.5 V | 2.1 mΩ typical - enables compatibility with 5 V microcontroller GPIOs without level-shifting, reducing BOM count. |
| Non-repetitive avalanche energy rating | 1.707 J - eliminates need for external snubbers in solenoid and lamp driver applications with inductive loads. |
| TrenchMOS architecture | Delivers superior figure-of-merit (RDS(on) × QG) vs. planar MOSFETs - improves efficiency in high-frequency PWM motor control (e.g., EPS). |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge phase leg in 12 V EPS motor driver, switching up to 100 A peak during steering assist. IC Role / Device Role / Timing Role: Low-side or high-side power switch with fast turn-off (tf = 192 ns) to minimize shoot-through risk and conduction losses. Use Value: 1.4 mΩ RDS(on) reduces I²R heating at 80 A, enabling compact heatsink design while meeting ASIL-B thermal derating requirements. |
Use Scenario: Starter motor engagement/disengagement and battery management in 12 V start-stop systems. IC Role / Device Role / Timing Role: High-current power switch controlling starter solenoid and regenerative braking energy routing. Use Value: 1310 A peak drain current capability handles cranking surge; avalanche ruggedness prevents failure during sudden load disconnection. |
| Transmission Control Module | Automotive Lamp & Solenoid Driver |
|
Use Scenario: Clutch and valve actuator control in automatic/DSG transmissions, operating continuously at elevated under-hood temperatures. IC Role / Device Role / Timing Role: Robust power switch driving 12 V solenoids with 200 ms duty cycles and frequent on/off transitions. Use Value: 175 °C Tj rating and 0.49 K/W Rth(j-mb) ensure stable operation at Tmb = 130 °C without thermal shutdown. |
Use Scenario: Headlamp, foglamp, and HVAC flap actuator control in body control modules (BCMs). IC Role / Device Role / Timing Role: Single-ended load switch replacing electromechanical relays for improved reliability and PWM dimming support. Use Value: Low gate charge (229 nC) enables clean 100–500 Hz PWM dimming without gate driver overheating; integrated source diode supports reverse EMF clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A, RDS(on) = 0.95 mΩ @ 10 V; DFN5x6 package; no mounting base. | Lacks integral heatsink interface; requires thermal vias and copper pour instead of direct mb attachment. | Prefer BUK661R6-30C118 when mechanical mounting to external heatsink is required or board space is constrained. |
| IRL1404ZPBF | 40 V, 162 A, RDS(on) = 3.2 mΩ @ 10 V; TO-220AB package; not AEC Q101 qualified. | Higher voltage rating but higher on-resistance and no automotive qualification - unsuitable for safety-critical systems. | Choose BUK661R6-30C118 for AEC Q101 compliance, lower RDS(on), and validated reliability in 12 V automotive environments. |
Compared with STL220N3LLH6 and IRL1404ZPBF, the BUK661R6-30C118 uniquely combines AEC Q101 qualification, D2PAK mounting-base thermal interface, and sub-1.6 mΩ RDS(on), making it optimal for space- and thermally constrained automotive power stages where regulatory compliance and long-term field reliability are mandatory.
Availability
BUK661R6-30C118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply across extended automotive production lifecycles.
Supply support for BUK661R6-30C118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK661R6-30C118 belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, thermally demanding 12 V vehicle subsystems requiring AEC Q101 compliance and long-term field stability.
FAQ
What is the maximum continuous drain current rating for BUK661R6-30C118?
The BUK661R6-30C118 supports 120 A continuous drain current at mounting base temperature (Tmb) = 25 °C, as specified in the datasheet's Quick Reference Data table. This rating is package-limited and decreases with rising Tmb; at Tmb = 100 °C, the rating remains 120 A due to thermal design margins, but actual usable current depends on PCB layout and heatsinking.
Is BUK661R6-30C118 qualified for automotive applications?
Yes, the BUK661R6-30C118 is explicitly designed and qualified to AEC Q101 standards for high-performance automotive use. Its qualification covers temperature cycling, humidity testing, and high-temperature reverse bias - confirming suitability for engine control units, transmission modules, and other safety-relevant 12 V systems.
What is the gate-source threshold voltage range for BUK661R6-30C118?
The BUK661R6-30C118 has a gate-source threshold voltage (VGS(th)) of 1.8 V minimum to 2.8 V maximum at Tj = 25 °C and ID = 1 mA. At elevated temperature (Tj = 175 °C), VGS(th) drops to 0.8 V minimum, ensuring turn-on stability across full automotive operating range.
Does BUK661R6-30C118 include avalanche energy rating?
Yes, the BUK661R6-30C118 specifies 1.707 J non-repetitive drain-source avalanche energy (EDS(AL)S) under defined test conditions (ID = 100 A, Vsup ≤ 30 V, RGS = 50 Ω, Tj(init) = 25 °C). This rating validates its ability to absorb inductive switching energy without failure in solenoid and motor control applications.
What package type does BUK661R6-30C118 use, and how is thermal management implemented?
The BUK661R6-30C118 uses the D2PAK (SOT404) package with a metal mounting base (mb) electrically connected to the drain. Thermal management relies on direct soldering of the mb to a large copper area or external heatsink, achieving a low Rth(j-mb) of 0.49 K/W - significantly more effective than ambient-convection cooling alone.
BUK661R6-30C118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 229 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14964 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK661R6-30C118 FAQ
1.How can I place an order for BUK661R6-30C118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK661R6-30C118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK661R6-30C118 reliable?
The price and inventory of BUK661R6-30C118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK661R6-30C118 is usually 5 days.
3.What payment methods are accepted for BUK661R6-30C118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK661R6-30C118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK661R6-30C118?
BUK661R6-30C118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK661R6-30C118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK661R6-30C118?
For technical support, including BUK661R6-30C118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK661R6-30C118 requirements.
6.How does Aetrix verify that BUK661R6-30C118 is sourced from the original manufacturer or authorized distributors?
All BUK661R6-30C118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK661R6-30C118 meets industry standards.
7.What is the process for return or replacement of BUK661R6-30C118?
All BUK661R6-30C118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK661R6-30C118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK661R6-30C118 part is unused and in its original packaging.
Return procedure for BUK661R6-30C118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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