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Nexperia USA Inc. BUK661R9-40C,118
- Part No.:
- BUK661R9-40C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK661R9-40C,118.pdf
- Description:
- MOSFET N-CH 40V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,260
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Product details
Overview
BUK661R9-40C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 40 V VDS, 1.6 mΩ RDS(on) @ 10 V VGS/25 A/25 °C, 120 A continuous drain current, and 175 °C junction rating-enabling use in electric power steering and start-stop micro-hybrid control modules.
For engineers reviewing the BUK661R9-40C,118 datasheet, BUK661R9-40C,118 pinout, BUK661R9-40C,118 application, or BUK661R9-40C,118 equivalent, key selection criteria include thermal performance at mounting base (Rth(j-mb) = 0.49 K/W), avalanche ruggedness (1.02 J unclamped), and gate charge profile (QG(tot) = 260 nC @ 10 V) for high-efficiency PWM motor control.
Technical Context
This device implements a trench-gate MOSFET architecture optimized for low conduction loss and robust switching in thermally constrained 12 V automotive systems. Its gate threshold voltage (VGS(th) = 1.8–2.8 V @ 25 °C) supports direct drive from standard 5 V or 3.3 V logic controllers without level-shifting.
The integrated source-drain diode exhibits 0.8–1.2 V forward drop at 25 A and 63 ns reverse recovery time, enabling synchronous rectification and freewheeling in H-bridge motor drivers. Avalanche energy rating (1.02 J) and 175 °C Tj limit support operation under load dump and short-circuit stress conditions common in transmission control units.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - defines safe operating range in 12 V automotive battery systems with load dump transients. |
| RDS(on) | 1.6 mΩ typical @ 10 V VGS, 25 A, 25 °C - enables <1.0 W conduction loss at 25 A, critical for thermally dense EPS modules. |
| ID | 120 A continuous drain current @ Tmb = 25 °C - limited by D2PAK package thermal capacity, not silicon die. |
| QG(tot) | 260 nC total gate charge @ VDS = 32 V, VGS = 10 V - determines gate driver power requirement and switching speed trade-off. |
| Rth(j-mb) | 0.49 K/W junction-to-mounting-base thermal resistance - enables direct heatsink mounting for high-power dissipation without PCB copper area constraints. |
| EAS | 1.02 J non-repetitive avalanche energy - supports single-event fault tolerance during inductive load turn-off in solenoid drivers. |
| VGS(th) | 1.8–2.8 V @ ID = 1 mA - ensures reliable turn-on with standard microcontroller GPIOs and reduces risk of partial conduction in noisy environments. |
Pinout & Package
Package: D2PAK (SOT404), plastic surface-mounted package with isolated mounting base connected to drain. Designed for high-current, high-thermal-load automotive applications requiring mechanical robustness and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires 10 V for full enhancement; gate leakage <100 nA ensures low standby current. |
| 2 (D) | Drain | Main high-side current path; electrically tied to mounting base for low-inductance thermal and power routing. |
| 3 (S) | Source | Reference node for gate drive and current sensing; internal source inductance 7.5 nH limits high-dI/dt ringing. |
| Mounting Base (mb) | Drain Connection | Exposed metal pad soldered to PCB heatsink; carries full drain current and provides primary thermal path to ambient. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock per AEC Q101 Rev G. |
| 175 °C maximum junction temperature | Enables operation in engine bay locations where ambient exceeds 125 °C, reducing need for derating or forced cooling. |
| TrenchMOS technology | Delivers 30% lower RDS(on) vs planar MOSFETs at same die size, improving power density in space-constrained ECUs. |
| Low gate charge (QGD = 72 nC) | Reduces Miller plateau duration, minimizing switching losses and EMI generation in 20–100 kHz motor control frequencies. |
| Integrated source-drain diode | Supports bidirectional current flow in H-bridge configurations without external freewheeling diodes, saving board space and cost. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter bridge, driven by dedicated gate driver IC. Use Value: 1.6 mΩ RDS(on) minimizes heat generation during continuous 80–100 A peak currents, extending module lifetime in sealed enclosures. |
Use Scenario: Controlling starter-generator engagement and battery isolation during engine restart cycles. IC Role / Device Role / Timing Role: Low-loss main power switch in bidirectional DC-DC converter and starter relay replacement circuit. Use Value: 1.02 J avalanche energy withstands repeated inductive kickback from starter motor windings without failure. |
| Transmission Control Solenoids | 12 V Automotive Lighting Drivers |
|
Use Scenario: PWM-driven proportional pressure control in automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-duty-cycle switching element delivering precise current regulation to solenoid coils. Use Value: Stable RDS(on) over -40 to 175 °C ensures consistent solenoid force across full vehicle operating temperature range. |
Use Scenario: High-brightness LED headlamp matrix dimming and adaptive beam shaping. IC Role / Device Role / Timing Role: Low-side current sink for multi-string LED arrays, synchronized with PWM controller. Use Value: 120 A continuous rating allows parallel string driving with margin, while 7.5 nH source inductance suppresses voltage spikes during fast PWM transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 0.95 mΩ RDS(on) @ 10 V, but rated only to 150 °C Tj; no AEC-Q101 documentation publicly available. | Lacks formal automotive qualification; suitable for industrial motor drives but not safety-critical EPS or transmission control. | Select when higher current density is needed and qualification traceability is not required. |
| IRFB4115PBF | 150 V VDS, 3.2 mΩ RDS(on) @ 10 V, TO-220 package; higher RDS(on) and larger thermal resistance (Rth(j-c) ≈ 0.8 K/W). | Designed for 24/48 V industrial systems; unsuitable for compact 12 V automotive modules due to package size and thermal limitations. | Choose only if higher voltage margin is essential and board space/thermal design permits TO-220 mounting. |
Compared with STL220N4F7AG and IRFB4115PBF, BUK661R9-40C,118 uniquely combines AEC-Q101 compliance, 175 °C operation, and D2PAK thermal performance-making it the only option qualified for high-reliability, space-constrained automotive power switching where both qualification and thermal efficiency are mandatory.
Availability
BUK661R9-40C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across extended automotive production lifecycles.
Supply support for BUK661R9-40C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
This part belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, safety-critical 12 V vehicle subsystems where AEC-Q101 compliance and junction temperature resilience are non-negotiable.
FAQ
What is the maximum continuous drain current for BUK661R9-40C,118?
The maximum continuous drain current is 120 A at mounting base temperature (Tmb) = 25 °C, as defined in Figure 1 of the datasheet. This rating is package-limited-not silicon-limited-and decreases linearly to approximately 60 A at Tmb = 100 °C due to thermal derating. The device must be mounted to a heatsink capable of maintaining Tmb ≤100 °C under full load.
Is BUK661R9-40C,118 suitable for synchronous rectification?
Yes. Its integrated source-drain diode has a typical forward voltage of 0.8 V at 25 A and 25 °C, with 63 ns reverse recovery time and 127 nC recovered charge-parameters validated for synchronous rectification in 12 V DC-DC converters. However, external Schottky diodes may still be preferred in ultra-high-frequency (>500 kHz) designs due to lower VF and trr.
Does BUK661R9-40C,118 require a gate resistor for automotive PWM operation?
Yes. A series gate resistor (typically 5–22 Ω) is required to dampen ringing caused by the 3.5 nH internal drain inductance and PCB layout parasitics. Without it, overshoot exceeding 20 V can occur during 100 A/µs switching events, risking gate oxide damage. Resistor value must balance switching loss reduction against EMI suppression per ISO 11452-2.
How is the mounting base electrically connected in BUK661R9-40C,118?
The mounting base is internally connected to the drain terminal (Pin 2), forming a low-inductance, high-current return path. It must be soldered directly to a thermally conductive PCB copper pour or heatsink. Electrical isolation from other system grounds is required unless the application explicitly uses drain-referenced topology-common in high-side switch configurations.
BUK661R9-40C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 260 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK661R9-40C,118 FAQ
1.How can I place an order for BUK661R9-40C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK661R9-40C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK661R9-40C,118 reliable?
The price and inventory of BUK661R9-40C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK661R9-40C,118 is usually 5 days.
3.What payment methods are accepted for BUK661R9-40C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK661R9-40C,118 transactions.
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4.How is shipping managed for BUK661R9-40C,118?
BUK661R9-40C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK661R9-40C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK661R9-40C,118?
For technical support, including BUK661R9-40C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK661R9-40C,118 requirements.
6.How does Aetrix verify that BUK661R9-40C,118 is sourced from the original manufacturer or authorized distributors?
All BUK661R9-40C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK661R9-40C,118 meets industry standards.
7.What is the process for return or replacement of BUK661R9-40C,118?
All BUK661R9-40C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK661R9-40C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK661R9-40C,118 part is unused and in its original packaging.
Return procedure for BUK661R9-40C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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