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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK662R4-40C,118

Name: BUK662R4-40C,118
Brand: Nexperia USA Inc.
SKU: BUK662R4-40C,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK662R4-40C,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK662R4-40C,118.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

BUK662R4-40C from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for high-reliability automotive power switching. It delivers 40 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 1.9 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, enabling efficient control of motors, solenoids, and power steering loads in 12 V/24 V systems.

For engineers reviewing the BUK662R4-40C datasheet, BUK662R4-40C pinout, BUK662R4-40C application, or BUK662R4-40C equivalent, key selection criteria include its 175 °C junction rating, avalanche ruggedness (637 mJ), thermal resistance (0.57 K/W j-to-mb), and compatibility with standard/logic-level gate drive sources in thermally demanding automotive environments.

Technical Context

This device employs advanced TrenchMOS technology to achieve low on-resistance and high current capability while maintaining robust switching performance. Its gate threshold voltage (1.8–2.8 V at T_j = 25 °C) ensures reliable turn-on with both 5 V and 10 V logic-level drivers, and its internal source/drain inductances (L_S = 7.5 nH, L_D = 3.5 nH) are optimized for fast, low-overshoot switching in motor control circuits.

The MOSFET supports unclamped inductive switching with a non-repetitive avalanche energy rating of 637 mJ under defined conditions (I_D = 120 A, V_sup ≤ 40 V, R_GS = 50 Ω), and its SOA curve accommodates peak drain currents up to 914 A for pulses ≤10 µs - critical for start-stop micro-hybrid load transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operation in 24 V automotive systems with transient margin.
R_DS(on)	1.9 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.2 W conduction loss at 25 A, reducing heatsink requirements.
I_D (cont)	120 A @ T_mb = 25 °C - High continuous current capacity suitable for electric power steering actuators and transmission solenoids.
E_AS	637 mJ - Non-repetitive avalanche energy rating supports robustness against inductive kickback in motor control without external snubbers.
R_th(j-mb)	0.57 K/W - Low thermal resistance from junction to mounting base enables direct PCB copper pour cooling in space-constrained modules.
Q_G(tot)	199 nC @ V_GS = 10 V - Total gate charge determines driver strength requirement; compatible with standard automotive gate drivers (e.g., UCC27531).
V_GS(th)	1.8–2.8 V @ I_D = 1 mA - Ensures full enhancement with 3.3 V or 5 V MCU outputs, eliminating need for level-shifting in many control designs.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is internally connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts standard or logic-level gate drive; threshold range allows direct MCU interface.
2 (D)	Drain	Main high-side power terminal; electrically and thermally tied to mounting base for low-inductance, high-current paths.
3 (S)	Source	Power return and reference node; isolated from mounting base to enable low-side switch configuration.
Mounting Base (mb)	Drain / Thermal Interface	Internally connected to drain; provides mechanical attachment and primary heat dissipation path to heatsink or PCB copper.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test requirements, ensuring reliability in engine bay and chassis applications.
175 °C maximum junction temperature	Enables operation in under-hood environments where ambient exceeds 125 °C without derating.
Logic-level gate drive compatibility	Turns on fully with 4.5 V V_GS (R_DS(on) = 2.7 mΩ typ), supporting direct connection to 5 V or 3.3 V microcontrollers.
Low R_DS(on) × Q_G figure-of-merit	~375 Ω·nC - Balances conduction and switching losses for high-efficiency PWM motor control at 20–100 kHz.
Integrated source-drain diode	V_SD = 0.8–1.2 V @ I_S = 25 A - Supports freewheeling in H-bridge and relay drive topologies without external diodes.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: Driving three-phase brushless DC motor windings via inverter half-bridges in column-assist EPS modules.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) N-channel power switch in low-side position; handles 80–100 A peak phase currents during torque assist.

Use Value: 1.9 mΩ R_DS(on) minimizes conduction loss at high duty cycles, while 637 mJ avalanche rating absorbs back-EMF during rapid deceleration events.

Use Scenario: Controlling starter motor engagement and battery isolation in 12 V micro-hybrid vehicles with automatic engine restart.

IC Role / Device Role / Timing Role: High-reliability power switch for starter solenoid and bidirectional battery disconnect circuits.

Use Value: AEC-Q101 qualification and 175 °C rating ensure stable operation during repeated hot cranking cycles; 914 A peak current supports instantaneous starter torque demands.

Transmission Control Solenoids

LED Headlamp Dimming Modules

Use Scenario: PWM-driven proportional pressure control of hydraulic valves in 8-speed automatic transmissions.

IC Role / Device Role / Timing Role: Precision current-regulated switch operating at 1–10 kHz PWM frequencies to modulate solenoid force linearly.

Use Value: Low gate charge (199 nC) enables fast, jitter-free PWM edge control; 0.57 K/W thermal resistance maintains stable R_DS(on) across wide temperature swings during extended gear shifts.

Use Scenario: High-side switching of multi-string LED arrays in adaptive front-lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: Robust, thermally stable high-side switch replacing P-channel devices to reduce conduction loss in 12 V headlamp rails.

Use Value: 40 V V_DS withstands load-dump transients; 120 A rating allows parallel use for >100 W LED clusters; mounting base simplifies thermal design on metal-core PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.4 mΩ @ 10 V, DFN5x6 package (no exposed drain pad)	Higher current, lower R_DS(on), but requires thermal vias instead of direct mounting base; not pin-compatible	Select when board space permits smaller footprint and higher current density is needed; verify thermal interface design.
IRF1405ZPBF	55 V, 169 A, R_DS(on) = 3.3 mΩ @ 10 V, TO-220AB package; not AEC-Q101 qualified	Higher voltage rating but no automotive qualification; larger package with higher thermal resistance (1.25 K/W)	Acceptable only for non-safety-critical 12 V industrial controls; avoid in production automotive ECUs due to missing AEC-Q101 validation.

Compared with STL220N4F7AG and IRF1405ZPBF, the BUK662R4-40C uniquely balances AEC-Q101 compliance, 1.9 mΩ on-resistance, D2PAK thermal performance (0.57 K/W), and logic-level gate drive - making it optimal for volume automotive power modules where qualification, thermal management, and gate drive simplicity are jointly critical.

Availability

BUK662R4-40C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control solenoids requiring stable component supply across automotive production lifecycles.

Supply support for BUK662R4-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's Automotive TrenchMOS portfolio, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems such as steering, braking, and energy management.

FAQ

Is BUK662R4-40C suitable for high-frequency PWM motor control?

Yes - with 199 nC total gate charge and 56.7 nC gate-drain charge, it supports clean switching up to 100 kHz in brushed DC and BLDC motor drives. Its low internal inductances (L_S = 7.5 nH, L_D = 3.5 nH) minimize voltage overshoot, and the 0.57 K/W thermal resistance prevents thermal runaway during sustained PWM operation.

What is the maximum allowable mounting base temperature for continuous operation?

The datasheet specifies continuous drain current limits down to T_mb = 100 °C (120 A maintained), and the absolute maximum mounting base temperature aligns with the 175 °C junction limit. For reliable long-term operation, keep T_mb ≤ 135 °C to maintain ≥20 °C thermal margin under worst-case ambient and power dissipation conditions.

Can BUK662R4-40C be used in high-side switch configurations?

No - the mounting base is internally connected to the drain, and the package lacks an isolated source terminal required for high-side floating-gate drive. It is intended for low-side or common-source configurations. For high-side use, consider dedicated high-side switches or complementary P-channel devices with isolated thermal pads.

Does this MOSFET include integrated ESD protection?

No - the BUK662R4-40C does not integrate ESD protection circuitry. Gate oxide is rated for ±16 V DC and ±20 V pulsed V_GS; external TVS diodes or RC filters are recommended on gate traces in automotive harness-connected applications to prevent damage from system-level ESD events per ISO 10605.

BUK662R4-40C,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 199 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11334 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 263W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK662R4-40C,118 FAQ

1.How can I place an order for BUK662R4-40C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK662R4-40C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK662R4-40C,118 reliable?

The price and inventory of BUK662R4-40C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK662R4-40C,118 is usually 5 days.

3.What payment methods are accepted for BUK662R4-40C,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK662R4-40C,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK662R4-40C,118?

BUK662R4-40C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK662R4-40C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK662R4-40C,118?

For technical support, including BUK662R4-40C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK662R4-40C,118 requirements.

6.How does Aetrix verify that BUK662R4-40C,118 is sourced from the original manufacturer or authorized distributors?

All BUK662R4-40C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK662R4-40C,118 meets industry standards.

7.What is the process for return or replacement of BUK662R4-40C,118?

All BUK662R4-40C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK662R4-40C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK662R4-40C,118 part is unused and in its original packaging.

Return procedure for BUK662R4-40C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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