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Nexperia USA Inc. BUK662R7-55C,118
- Part No.:
- BUK662R7-55C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK662R7-55C,118.pdf
- Description:
- MOSFET N-CH 55V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,704
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Product details
Overview
BUK662R7-55C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 120 A continuous drain current at 25 °C mounting base temperature, 2.3 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, and supports 55 V drain-source voltage - enabling use in 12 V/24 V electric power steering and transmission control systems.
For engineers reviewing the BUK662R7-55C,118 datasheet, BUK662R7-55C,118 pinout, BUK662R7-55C,118 application, or BUK662R7-55C,118 equivalent, key selection criteria include its 175 °C junction rating, 724 mJ non-repetitive avalanche energy, thermal resistance of 0.45 K/W (junction-to-mounting base), and suitability for thermally demanding automotive subsystems requiring high-current, low-RDS(on) switching with robust transient ruggedness.
Technical Context
This device employs advanced TrenchMOS technology to achieve low on-resistance and high current capability while maintaining AEC-Q101 qualification for automotive reliability. Its gate threshold voltage ranges from 1.8 V to 2.8 V at 25 °C, and it sustains stable operation up to 175 °C junction temperature - critical for under-hood applications where thermal management is constrained.
The FET features integrated source-drain diode with 0.85 V forward voltage at 25 A and 67 ns reverse recovery time, supporting synchronous rectification and freewheeling in motor control. Its dynamic characteristics include 258 nC total gate charge (VGS = 10 V) and 75 nC gate-drain charge, enabling predictable switching behavior in high-frequency PWM-driven loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - defines safe operating voltage ceiling for 12 V/24 V automotive bus systems with transient overvoltage margin. |
| ID (continuous) | 120 A at Tmb = 25 °C - enables high-power load switching without external parallel devices in compact ECU designs. |
| RDS(on) | 2.3 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - minimizes conduction loss and heat generation in high-current paths. |
| EAS | 724 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance during inductive load turn-off events like solenoid de-energization. |
| Rth(j-mb) | 0.45 K/W - enables efficient heat transfer to PCB copper or heatsink, supporting high-power density packaging in space-constrained modules. |
| Tj max | 175 °C - allows sustained operation in engine bay environments where ambient temperatures exceed 100 °C. |
| QG(tot) | 258 nC @ VGS = 10 V - determines gate driver strength requirement and switching loss profile in PWM applications. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain for low-inductance thermal and power path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement and minimal RDS(on); gate-source voltage limited to ±16 V DC. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for direct thermal coupling and low-inductance current return path. |
| 3 (S) | Source | Power return node and reference for gate drive; internal source inductance is 7.5 nH - impacts switching waveform integrity in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock - required for safety-critical powertrain and chassis systems. |
| 175 °C junction rating | Enables uninterrupted operation in under-hood locations where ambient temperatures reach 125 °C and thermal derating margins are tight. |
| Low RDS(on) with TrenchMOS | 2.3 mΩ typical at 10 V drive reduces conduction losses by >30% vs. planar MOSFETs of comparable voltage rating, improving system efficiency. |
| High avalanche ruggedness | 724 mJ unclamped EAS supports robust handling of inductive kickback without external snubbers in motor/solenoid drivers. |
| Optimized for intermediate gate drive | Designed to interface directly with standard 10 V automotive gate drivers (e.g., UCC27531, TC4427), eliminating level-shifting complexity. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge motor driver for assist torque actuation in 12 V EPS systems. IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration; handles bidirectional 80–100 A peak currents during steering transients. Use Value: Low 2.3 mΩ RDS(on) minimizes resistive heating during frequent assist cycles, extending module lifetime and reducing thermal design overhead. |
Use Scenario: Load switching for battery disconnect, starter motor pre-engagement, and alternator field control in 12 V micro-hybrid architectures. IC Role / Device Role / Timing Role: High-reliability power switch managing intermittent 60–90 A loads with rapid on/off transitions during engine restart events. Use Value: 175 °C junction rating and 724 mJ avalanche energy ensure survival during repeated cold cranking surges and load dump transients. |
| Transmission Valve Control | Electric Brake Booster Actuation |
|
Use Scenario: Solenoid driver for electro-hydraulic pressure modulation in automatic transmission shift control units. IC Role / Device Role / Timing Role: Fast-switching power stage delivering precise 1–5 A pulsed current to proportional solenoids with <100 ns fall time. Use Value: 186 ns typical fall time and 75 nC QGD enable accurate current regulation and reduced solenoid hysteresis, improving shift smoothness. |
Use Scenario: High-current switching for vacuum pump motor and brake booster solenoid in electric brake-by-wire systems. IC Role / Device Role / Timing Role: Primary power switch controlling 40–60 A pump motor startup and duty-cycled operation under emergency braking conditions. Use Value: 306 W total power dissipation at Tmb = 25 °C supports short-duration high-power bursts without thermal shutdown, ensuring fail-operational response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | 40 V VDS, 220 A ID, 1.2 mΩ RDS(on) - lower voltage rating but higher current and lower on-resistance. | Restricted to 12 V systems only; unsuitable for 24 V commercial vehicle applications requiring 55 V rating. | Select when maximum current density is prioritized over voltage headroom in compact 12 V modules. |
| IRFB4115PBF | 150 V VDS, 110 A ID, 4.5 mΩ RDS(on) - higher voltage rating but higher on-resistance and no AEC-Q101 qualification. | Lacks automotive qualification; requires additional reliability validation for production deployment in safety-critical systems. | Consider only for industrial prototypes or non-automotive applications where 150 V margin outweighs qualification requirements. |
Compared with STL220N4LF6AG and IRFB4115PBF, BUK662R7-55C,118 uniquely balances 55 V rating, AEC-Q101 compliance, 2.3 mΩ on-resistance, and 175 °C operation - making it the only drop-in solution for production 12 V/24 V automotive power switching where qualification, thermal resilience, and voltage margin are jointly mandatory.
Availability
BUK662R7-55C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission valve actuation requiring stable component supply across automotive OEM and Tier-1 production programs.
Supply support for BUK662R7-55C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.
BUK662R7-55C,118 belongs to Nexperia's TrenchMOS automotive power FET product line, engineered specifically for high-current, high-temperature automotive subsystems where AEC-Q101 compliance, low RDS(on), and avalanche ruggedness are non-negotiable.
FAQ
What is the maximum continuous drain current for BUK662R7-55C,118 at 100 °C mounting base temperature?
The maximum continuous drain current remains 120 A at Tmb = 100 °C per Figure 1 in the datasheet, as current limitation is package-defined rather than junction-temperature-limited within this range. Derating begins above 100 °C, reaching ~80 A at Tmb = 150 °C.
Does BUK662R7-55C,118 require a gate resistor for automotive gate driver compatibility?
Yes - a 10 Ω external gate resistor is recommended per Figure 13 test conditions to control dV/dt and prevent oscillation, especially given its 258 nC total gate charge and low 7.5 nH source inductance. This ensures clean turn-on/turn-off with standard 10 V automotive drivers.
Can BUK662R7-55C,118 be used in synchronous rectification topologies?
Yes - its integrated source-drain diode has 0.85 V forward voltage at 25 A and 67 ns reverse recovery time, enabling use in synchronous buck converters for 12 V DC-DC supplies in ADAS ECUs, provided gate timing accounts for body diode conduction during dead-time.
Is the mounting base electrically isolated from the drain terminal?
No - the mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 pinning information and Figure 17 package outline. This requires careful PCB layout to avoid unintended drain-to-heatsink shorts and mandates insulated thermal interface materials if mounted to a common-chassis heatsink.
BUK662R7-55C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 258 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK662R7-55C,118 FAQ
1.How can I place an order for BUK662R7-55C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK662R7-55C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK662R7-55C,118 reliable?
The price and inventory of BUK662R7-55C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK662R7-55C,118 is usually 5 days.
3.What payment methods are accepted for BUK662R7-55C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK662R7-55C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK662R7-55C,118?
BUK662R7-55C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK662R7-55C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK662R7-55C,118?
For technical support, including BUK662R7-55C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK662R7-55C,118 requirements.
6.How does Aetrix verify that BUK662R7-55C,118 is sourced from the original manufacturer or authorized distributors?
All BUK662R7-55C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK662R7-55C,118 meets industry standards.
7.What is the process for return or replacement of BUK662R7-55C,118?
All BUK662R7-55C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK662R7-55C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK662R7-55C,118 part is unused and in its original packaging.
Return procedure for BUK662R7-55C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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