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Nexperia USA Inc. BUK663R7-75C,118
- Part No.:
- BUK663R7-75C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK663R7-75C,118.pdf
- Description:
- MOSFET N-CH 75V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,736
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Product details
Overview
BUK663R7-75C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 75 V VDS, 3.4 mΩ RDS(on) @ 10 VGS/25 A/25 °C, 120 A continuous drain current at Tmb = 25 °C, and 175 °C maximum junction temperature-enabling use in electric power steering, start-stop micro-hybrid systems, and transmission control.
For engineers reviewing the BUK663R7-75C,118 datasheet, BUK663R7-75C,118 pinout, BUK663R7-75C,118 application, or BUK663R7-75C,118 equivalent, key selection criteria include its 0.49 K/W Rth(j-mb), unclamped avalanche energy of 523 mJ, and suitability for thermally demanding 12 V automotive subsystems requiring robust MOSFET switching with validated automotive qualification.
Technical Context
This device uses advanced TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness while meeting AEC-Q101 stress test requirements. Its gate threshold voltage ranges from 0.8 V (Tj = 175 °C) to 3.3 V (Tj = −55 °C), ensuring stable turn-on behavior across extreme automotive temperature ranges.
The MOSFET features integrated source-drain diode with 0.8–1.2 V forward voltage at 25 A and 72 ns reverse recovery time, supporting efficient freewheeling in inductive load switching. Its dynamic parameters-including 234 nC total gate charge and 580–800 pF Crss-enable predictable switching loss estimation in high-frequency motor control designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems with load dump margin. |
| RDS(on) | 3.4 mΩ typ @ 10 VGS, 25 A, 25 °C - Enables <1 W conduction loss at 120 A, critical for high-efficiency power steering drivers. |
| ID cont. | 120 A @ Tmb = 25 °C - Continuous current rating limited by D2PAK thermal performance, not silicon capability. |
| EAS | 523 mJ unclamped - Supports reliable operation under inductive switching transients without external snubbers in solenoid/lamp control. |
| Rth(j-mb) | 0.49 K/W - Thermal resistance from junction to mounting base enables direct heatsink attachment for high-power density layouts. |
| QG(tot) | 234 nC @ VDS = 60 V, VGS = 10 V - Determines gate driver strength requirement for <500 ns turn-off delay in safety-critical applications. |
| Tj max | 175 °C - Junction temperature rating aligned with AEC-Q101 Grade 0, enabling operation in engine bay environments. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with isolated mounting base connected to drain terminal. Dimensions per IEC JEDEC outline: 15.8 × 10.3 × 4.5 mm, with 2.54 mm lead pitch and integral drain pad for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input requiring ≥10 V drive for full enhancement; gate leakage <100 nA ensures low standby current in always-on modules. |
| 2 (D) | Drain | Main high-side switching node; electrically tied to mounting base for direct heatsink coupling and low-inductance power path. |
| 3 (S) | Source | Power return path; internal source inductance 7.5 nH minimizes ringing during fast switching in motor phase-leg configurations. |
| Mounting Base (mb) | Drain Terminal Extension | Thermally conductive metal pad soldered to PCB copper pour; provides primary heat dissipation path and electrical connection to drain. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-required for power steering and transmission ECUs. |
| 175 °C junction rating | Enables operation in under-hood locations where ambient exceeds 125 °C, eliminating need for derating in start-stop micro-hybrid systems. |
| Low RDS(on) × QG figure-of-merit | 3.4 mΩ × 234 nC = 0.796 Ω·nC - Balances conduction and switching losses for optimal efficiency in 10–100 kHz motor control PWM. |
| Unclamped avalanche energy | 523 mJ - Withstands repetitive inductive kickback from solenoids and brushed DC motors without failure or parameter shift. |
| Integrated source-drain diode | VSD = 0.8–1.2 V @ 25 A - Provides controlled freewheeling path with 72 ns trr, reducing need for external Schottky diodes in lamp/motor drivers. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Systems |
|---|---|
|
Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules operating continuously at 12 V nominal with peak loads up to 100 A. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter bridge, driven by isolated gate driver with precise dead-time control. Use Value: 3.4 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, directly improving EPS system efficiency and thermal margin. |
Use Scenario: Controlling starter-generator engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side main switch in bidirectional DC-DC converter and starter relay replacement circuit. Use Value: 523 mJ avalanche energy withstands repeated cranking transients without degradation, extending service life beyond 100,000 cycles. |
| Transmission Control Solenoids | LED Headlamp Dimming Drivers |
|
Use Scenario: Driving linear or PWM-controlled hydraulic solenoids in automatic transmission valve bodies exposed to 150 °C under-hood temperatures. IC Role / Device Role / Timing Role: High-current, thermally robust switching element with integrated freewheeling diode for inductive load commutation. Use Value: 175 °C Tj rating and 0.49 K/W Rth(j-mb) allow direct PCB-mount operation without additional heatsinking in space-constrained valve body assemblies. |
Use Scenario: High-side dimming control for adaptive LED headlamps requiring precise 0–100% current regulation and overvoltage protection. IC Role / Device Role / Timing Role: Constant-current switch in buck-derived LED driver topology with analog/PWM dimming interface. Use Value: Low gate charge (234 nC) enables fast PWM response (<1 µs edge) for flicker-free dimming, while 75 V VDS accommodates load-dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | 40 V VDS, 1.2 mΩ RDS(on), TO-263 package, AEC-Q101 qualified | Lower voltage rating limits use to 48 V mild-hybrid subsystems; unsuitable for 12 V load-dump scenarios requiring 75 V margin. | Select only for 48 V auxiliary systems where lower RDS(on) justifies reduced voltage headroom. |
| IRF1405PBF | 55 V VDS, 5.3 mΩ RDS(on), TO-220 package, no AEC-Q101 qualification | Lacks automotive qualification and thermal robustness; higher RDS(on) increases conduction loss by 56% at 120 A. | Acceptable only for non-safety-critical industrial prototypes; not recommended for production automotive designs. |
Compared with STL220N4LF6AG and IRF1405PBF, BUK663R7-75C,118 uniquely combines 75 V rating, AEC-Q101 compliance, and 3.4 mΩ on-resistance in a thermally optimized D2PAK package-making it the only option qualified for high-reliability 12 V automotive power switching where voltage margin, temperature resilience, and conduction efficiency are simultaneously critical.
Availability
BUK663R7-75C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control applications requiring stable component supply with automotive-grade traceability and long-term lifecycle support.
Supply support for BUK663R7-75C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.
This part belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where AEC-Q101 compliance and thermal robustness are mandatory design requirements.
FAQ
What is the maximum continuous drain current for BUK663R7-75C,118 at 100 °C mounting base temperature?
The datasheet specifies 120 A continuous drain current at both Tmb = 25 °C and Tmb = 100 °C under VGS = 10 V conditions. This flat rating reflects the device's thermal design, where power dissipation is limited by package capability rather than silicon junction temperature alone-enabling consistent high-current operation across wide under-hood temperature ranges.
Does BUK663R7-75C,118 require external gate resistors for automotive EMI compliance?
Yes-while the device's 234 nC gate charge and 7.5 nH source inductance support fast switching, automotive EMC standards (e.g., CISPR 25 Class 5) typically require gate resistors of 10–47 Ω to dampen high-frequency ringing. The datasheet's td(off) = 412 ns and tf = 156 ns values were measured with RG(ext) = 10 Ω, confirming this value as a validated starting point for EMI-limited designs.
Can BUK663R7-75C,118 be used in parallel configurations for higher current handling?
Yes-its positive temperature coefficient of RDS(on) (increasing from 3.4 mΩ at 25 °C to 10.4 mΩ at 175 °C) ensures inherent current sharing stability when paralleled. However, layout symmetry (matched gate trace lengths, shared mounting base thermal path) is essential to avoid imbalance; Nexperia application note AN10273 provides layout guidelines for multi-device configurations.
What is the significance of the mounting base being electrically connected to the drain terminal?
The mounting base serves as both the primary thermal interface and the drain electrical node-eliminating parasitic inductance between die and heatsink. This integration reduces switching loop area, suppresses voltage overshoot during turn-off, and improves avalanche energy handling. It mandates isolation of the PCB copper pour from other potentials and requires careful grounding strategy in multi-MOSFET modules.
BUK663R7-75C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 234 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK663R7-75C,118 FAQ
1.How can I place an order for BUK663R7-75C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK663R7-75C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK663R7-75C,118 reliable?
The price and inventory of BUK663R7-75C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK663R7-75C,118 is usually 5 days.
3.What payment methods are accepted for BUK663R7-75C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK663R7-75C,118 transactions.
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4.How is shipping managed for BUK663R7-75C,118?
BUK663R7-75C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK663R7-75C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK663R7-75C,118?
For technical support, including BUK663R7-75C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK663R7-75C,118 requirements.
6.How does Aetrix verify that BUK663R7-75C,118 is sourced from the original manufacturer or authorized distributors?
All BUK663R7-75C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK663R7-75C,118 meets industry standards.
7.What is the process for return or replacement of BUK663R7-75C,118?
All BUK663R7-75C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK663R7-75C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK663R7-75C,118 part is unused and in its original packaging.
Return procedure for BUK663R7-75C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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