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Nexperia USA Inc. BUK664R4-55C,118

Name: BUK664R4-55C,118
Brand: Nexperia USA Inc.
SKU: BUK664R4-55C,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK664R4-55C,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK664R4-55C,118.pdf

Description:: MOSFET N-CH 55V 100A D2PAK

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Product details

Overview

BUK664R4-55C from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers 4.2 mΩ R_DS(on) at V_GS = 10 V and ID = 25 A, enabling high-efficiency power switching in automotive 12 V/24 V systems including electric power steering and transmission control.

For engineers reviewing the BUK664R4-55C datasheet, BUK664R4-55C pinout, BUK664R4-55C application, or BUK664R4-55C equivalent, this device is selected for thermally demanding automotive subsystems requiring avalanche ruggedness (263 mJ), low gate charge (124 nC at V_GS = 10 V), and stable R_DS(on) performance up to 175 °C.

Technical Context

This intermediate-level gate-drive MOSFET uses TrenchMOS technology to achieve low on-resistance with moderate gate threshold voltage (V_GS(th) = 1.8–2.8 V at 25 °C) and robust thermal performance (R_th(j-mb) = 0.74 K/W). Its 175 °C maximum junction temperature and AEC-Q101 qualification support operation in under-hood environments without derating.

The device integrates a source-drain diode with 0.83–1.2 V forward voltage at 25 A and 55 ns reverse recovery time, supporting synchronous rectification and inductive load commutation. Avalanche energy rating of 263 mJ (non-repetitive) enables reliable operation during transient overvoltage events in motor drive and solenoid control circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V automotive systems with load-dump transients.
I_D (continuous)	100 A at T_mb = 25 °C - Continuous current capability limited by D2PAK package thermal resistance; supports high-power motor drivers.
R_DS(on)	4.2 mΩ (typ) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Low conduction loss enabling <1 W dissipation at 50 A, critical for thermal management in compact ECUs.
Q_G(tot)	124 nC at V_DS = 44 V, V_GS = 10 V - Total gate charge determines driver strength requirement; compatible with standard automotive gate drivers.
E_AS	263 mJ (non-repetitive) - Avalanche energy rating ensures survivability during inductive turn-off spikes in solenoid and transmission valve control.
T_j(max)	175 °C - Maximum junction temperature enables operation in engine bay locations without forced cooling or excessive derating.
R_th(j-mb)	0.74 K/W - Junction-to-mounting-base thermal resistance; enables direct heatsink mounting for efficient heat extraction in high-power modules.

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain terminal for low-inductance thermal and electrical path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input for MOSFET channel; requires ≥10 V drive for full enhancement; threshold voltage 1.8–2.8 V at 25 °C.
2 (D)	Drain	Main high-side power terminal; internally connected to mounting base for low-impedance thermal and current path to heatsink.
3 (S)	Source	Power return node; forms reference for gate drive; also serves as cathode of integrated body diode.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive safety-critical applications including power steering and transmission control per stress test requirements.
175 °C junction rating	Enables uninterrupted operation in under-hood environments where ambient temperatures exceed 125 °C without thermal shutdown.
Low R_DS(on) at 4.5 V drive	5.7 mΩ (typ) at V_GS = 4.5 V, I_D = 25 A - Supports compatibility with 5 V microcontroller outputs in cost-sensitive ECU designs.
Integrated source-drain diode	100 A continuous source current capability with 55 ns t_rr - Eliminates need for external freewheeling diode in DC motor H-bridge and solenoid drivers.
High avalanche ruggedness	263 mJ non-repetitive E_AS - Absorbs energy from inductive kickback in start-stop micro-hybrid starter relays and valve actuators.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Starter Relay

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules exposed to under-hood thermal cycling.

IC Role / Device Role / Timing Role: Main power switch in three-phase inverter bridge; handles bidirectional current up to 100 A with fast turn-on/off timing (t_d(on) = 25 ns, t_f = 116 ns).

Use Value: 4.2 mΩ R_DS(on) minimizes conduction loss at 12 V bus, reducing thermal stress on PCB and enabling smaller heatsinks in space-constrained steering columns.

Use Scenario: High-reliability contactor replacement in 12 V start-stop systems where mechanical relay wear and arcing are unacceptable.

IC Role / Device Role / Timing Role: Solid-state main battery disconnect switch; sustains 100 A continuous current and withstands 550 A peak pulses during cranking.

Use Value: 263 mJ avalanche rating absorbs inductive energy from starter solenoid coil de-energization, eliminating snubber circuitry and improving system MTBF.

Transmission Control Solenoid Driver

24 V Commercial Vehicle Lamp & Heater Control

Use Scenario: PWM-driven proportional pressure control in automatic transmission valve bodies operating at 125 °C ambient.

IC Role / Device Role / Timing Role: Low-side switch controlling solenoid current; operates with 100 kHz PWM frequency and precise duty-cycle resolution.

Use Value: Stable R_DS(on) up to 175 °C ensures consistent current regulation across full temperature range, preventing shift quality degradation.

Use Scenario: Centralized load switching for LED headlamps, cabin heaters, and defrosters in heavy-duty trucks with wide ambient (-40 °C to +85 °C) and transient voltage demands.

IC Role / Device Role / Timing Role: High-side power distribution switch; interfaces directly with CAN-based body control module via opto-isolated gate driver.

Use Value: 55 V V_DS rating accommodates ISO 7637-2 pulse 5a (120 V load dump), eliminating need for external TVS clamping in 24 V architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DS, 220 A I_D, 1.7 mΩ R_DS(on) at 10 V - higher current, lower voltage rating.	Designed for 12 V EV traction inverters; not AEC-Q101 qualified; lacks 55 V margin for load dump.	Select only for 12 V non-automotive industrial motor drives where 55 V rating is unnecessary and higher current density is prioritized.
IRF1404ZPBF	40 V V_DS, 195 A I_D, 3.8 mΩ R_DS(on) at 10 V - legacy planar MOSFET, no AEC qualification.	Used in legacy commercial power supplies; lacks thermal robustness (T_j max = 175 °C but no automotive thermal cycling validation).	Acceptable for cost-sensitive 12 V industrial controls but unsuitable for automotive due to missing AEC-Q101 and inferior avalanche performance (E_AS = 120 mJ).

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK664R4-55C uniquely combines 55 V rating, AEC-Q101 qualification, and 263 mJ avalanche energy-making it the only viable option for 24 V automotive power switching where load dump immunity and long-term reliability are mandatory.

Availability

BUK664R4-55C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK664R4-55C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with deep expertise in automotive-grade power devices.

The BUK664R4-55C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive vehicle subsystems requiring AEC-Q101 compliance, high current density, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for BUK664R4-55C at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the continuous drain current is 97 A per the limiting values table. This reflects thermal derating due to reduced heat transfer efficiency at elevated mounting base temperatures, and must be verified against actual PCB layout and heatsink performance.

Does BUK664R4-55C have a built-in body diode, and what are its key parameters?

Yes, it integrates a source-drain diode rated for 100 A continuous source current at T_mb = 25 °C. Key parameters include 0.83–1.2 V forward voltage at 25 A and 25 °C, and 55 ns reverse recovery time (t_rr) at I_S = 20 A, dI_S/dt = −100 A/µs, confirming suitability for freewheeling in inductive loads without external diodes.

Can BUK664R4-55C be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from 1.8–2.8 V at 25 °C, but full enhancement requires ≥4.5 V for acceptable R_DS(on) (5.7 mΩ typ). At 3.3 V, R_DS(on) exceeds 10 mΩ, causing excessive conduction loss; a level-shifting gate driver is required for reliable 100 A switching.

What is the significance of the mounting base (mb) connection in the D2PAK package?

The mounting base is electrically tied to the drain terminal and serves as the primary thermal and current path to the heatsink. This design reduces both thermal resistance (R_th(j-mb) = 0.74 K/W) and parasitic inductance (L_D = 7.5 nH), critical for minimizing voltage overshoot and improving switching efficiency in high-di/dt automotive applications.

BUK664R4-55C,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 7750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 204W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK664R4-55C,118 FAQ

1.How can I place an order for BUK664R4-55C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK664R4-55C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK664R4-55C,118 reliable?

The price and inventory of BUK664R4-55C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK664R4-55C,118 is usually 5 days.

3.What payment methods are accepted for BUK664R4-55C,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK664R4-55C,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK664R4-55C,118?

BUK664R4-55C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK664R4-55C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK664R4-55C,118?

For technical support, including BUK664R4-55C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK664R4-55C,118 requirements.

6.How does Aetrix verify that BUK664R4-55C,118 is sourced from the original manufacturer or authorized distributors?

All BUK664R4-55C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK664R4-55C,118 meets industry standards.

7.What is the process for return or replacement of BUK664R4-55C,118?

All BUK664R4-55C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK664R4-55C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK664R4-55C,118 part is unused and in its original packaging.

Return procedure for BUK664R4-55C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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