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Nexperia USA Inc. BUK664R8-75C,118
- Part No.:
- BUK664R8-75C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK664R8-75C,118.pdf
- Description:
- MOSFET N-CH 75V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,073
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Product details
Overview
BUK664R8-75C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for intermediate-level gate drive in automotive power switching. It delivers 120 A continuous drain current at 25 °C mounting base temperature, 4.3 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, and supports 75 V drain-source voltage with 175 °C maximum junction temperature - enabling use in electric power steering and start-stop micro-hybrid systems.
For engineers reviewing the BUK664R8-75C,118 datasheet, BUK664R8-75C,118 pinout, BUK664R8-75C,118 application, or BUK664R8-75C,118 equivalent, key selection criteria include its 0.57 K/W junction-to-mounting-base thermal resistance, 329 mJ non-repetitive avalanche energy rating, gate charge profile (QG(tot) = 177 nC), and compatibility with 12 V/24 V/42 V automotive bus architectures requiring high-current, thermally robust MOSFETs.
Technical Context
This device employs advanced TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness while meeting AEC-Q101 stress test requirements. Its gate threshold voltage (VGS(th)) ranges from 1.8 V to 2.8 V at 25 °C, and exhibits stable operation across -55 °C to 175 °C junction temperature range.
The FET features integrated source-drain diode with 0.85 V forward voltage at 25 A and 62 ns reverse recovery time, supporting synchronous rectification and freewheeling in motor control topologies. Dynamic parameters - including QGD = 46.7 nC and Ciss = 8500 pF - are optimized for fast switching with controlled EMI in high-frequency PWM applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V maximum drain-source voltage - defines safe blocking capability in 42 V automotive systems with transient margin. |
| ID | 120 A continuous drain current at Tmb = 25 °C - enables high-power load switching without external heatsink in short-duration duty cycles. |
| RDS(on) | 4.3 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - minimizes conduction loss in high-current motor/solenoid drivers. |
| Ptot | 263 W total power dissipation at Tmb = 25 °C - supports high-efficiency thermal management when mounted on copper PCB pads or heatsinks. |
| Rth(j-mb) | 0.57 K/W thermal resistance from junction to mounting base - allows direct thermal path design for automotive under-hood environments up to 175 °C. |
| EDS(AL)S | 329 mJ non-repetitive avalanche energy - provides robustness against inductive kickback in transmission control and solenoid actuation. |
| QG(tot) | 177 nC total gate charge at VDS = 60 V, VGS = 10 V - determines required gate driver peak current and switching loss in 20–100 kHz PWM designs. |
Pinout & Package
Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal for low-inductance, high-current thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input for MOSFET turn-on/turn-off; requires ≥10 V drive for full enhancement and minimal RDS(on). |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for thermal and electrical connection to heatsink. |
| 3 (S) | Source | Power return path and reference for gate drive; forms common node with gate driver ground in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing - suitable for safety-critical EPS and transmission modules. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments without derating in start-stop and regenerative braking scenarios. |
| Low RDS(on) × QG figure-of-merit | 4.3 mΩ × 177 nC = 761 mΩ·nC - balances conduction and switching losses for high-efficiency 12–42 V DC-DC and motor inverters. |
| Integrated source-drain diode | 62 ns trr, 153 nC Qr - reduces need for external freewheeling diodes in brushed DC motor drives and solenoid clamps. |
| Mounting base as drain terminal | Minimizes parasitic inductance (<3.5 nH LD) and improves thermal transfer - critical for high-di/dt switching in electric power steering. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Systems |
|---|---|
|
Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules operating at 12 V nominal with peak loads >80 A. IC Role / Device Role / Timing Role: N-channel power switch in three-phase inverter half-bridge configuration, driven by isolated gate drivers with 10 V logic-level interface. Use Value: 4.3 mΩ RDS(on) and 0.57 K/W Rth(j-mb) reduce heat generation during sustained assist torque, enabling compact mechanical packaging near steering column. |
Use Scenario: Intelligent battery disconnect and starter motor engagement control in 12 V micro-hybrid vehicles with frequent engine restarts. IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow between AGM battery and starter solenoid or DC-DC converter input. Use Value: 329 mJ avalanche energy rating absorbs inductive energy from solenoid coil de-energization without external snubbers, improving system reliability over 100,000 cycles. |
| Transmission Control Solenoids | Electric/Hydraulic Brake Actuators |
|
Use Scenario: Precision current regulation for linear shift solenoids and pressure control valves in 8-speed automatic transmissions. IC Role / Device Role / Timing Role: PWM-controlled N-channel switch operating at 1–10 kHz with analog current feedback loop closed via source sense resistor. Use Value: Stable VGS(th) (1.8–2.8 V) and low gate charge enable accurate 10-bit current resolution across -40 °C to 150 °C ambient, meeting ASIL-B functional safety requirements. |
Use Scenario: Fast-acting brake caliper actuation in electro-hydraulic brake (EHB) systems requiring <100 ms response time from command to full pressure. IC Role / Device Role / Timing Role: High-speed switching element in dual-redundant brake motor driver stage, synchronized with CAN FD command timing. Use Value: 365 ns td(off) and 141 ns tf support sub-millisecond turn-off, ensuring fail-safe hydraulic isolation within ISO 26262 ASIL-D timing constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V VDS, 220 A ID, 1.8 mΩ RDS(on), TO-263 package, no AEC-Q101 certification | Higher current capacity but lower voltage rating; unsuitable for 42 V systems or unclamped inductive loads above 60 V | Select only for 12 V-only applications where higher peak current outweighs avalanche and qualification needs. |
| IRFS7530TRLPBF | 60 V VDS, 160 A ID, 2.4 mΩ RDS(on), D2PAK package, AEC-Q101 qualified | Lower voltage rating and reduced avalanche energy (220 mJ vs. 329 mJ); identical thermal resistance and pinout | Acceptable drop-in replacement in 12 V/24 V systems with lower transient voltage stress, but verify clamp circuit margin. |
Compared with STL220N6F7AG and IRFS7530TRLPBF, BUK664R8-75C,118 uniquely combines 75 V blocking, AEC-Q101 compliance, and 329 mJ avalanche rating in D2PAK - making it the only option qualified for 42 V automotive subsystems requiring both high-voltage margin and high-current capability.
Availability
BUK664R8-75C,118 is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across extended automotive production lifecycles.
Supply support for BUK664R8-75C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with core expertise in automotive-qualified MOSFETs, ESD protection, and logic ICs.
The BUK664R8-75C,118 belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, high-current switching in 12 V–42 V vehicle networks - emphasizing AEC-Q101 reliability, low RDS(on), and robust avalanche performance.
FAQ
What is the maximum allowable gate-source voltage for BUK664R8-75C,118?
The absolute maximum DC gate-source voltage is ±16 V, with pulsed rating up to ±20 V for durations not exceeding 5 minutes cumulative. Exceeding these limits risks permanent gate oxide damage. For reliable operation, maintain VGS between 4.5 V (minimum for 25 A conduction) and 10 V (optimal for lowest RDS(on)).
Can BUK664R8-75C,118 be used in synchronous rectification topologies?
Yes - its integrated source-drain diode has 62 ns reverse recovery time and 153 nC recovered charge, enabling efficient synchronous rectification in 12 V–42 V DC-DC converters up to 200 kHz. However, external Schottky diodes may still be preferred in ultra-low-loss designs due to lower forward voltage.
How does the mounting base connection affect PCB layout?
The mounting base is electrically tied to the drain terminal and must be soldered to a large copper pour or heatsink pad. This creates a low-inductance, low-thermal-resistance path but requires isolation from other nets. Keep gate and source traces short and symmetric to minimize ringing; avoid routing sensitive analog signals beneath the base area.
Is BUK664R8-75C,118 suitable for high-frequency PWM motor control?
Yes - with 32.6 ns turn-on delay, 65 ns rise time, and 365 ns turn-off delay, it supports PWM frequencies up to 100 kHz in brushed DC and BLDC motor drives. Gate drive strength must exceed 2 A peak to fully charge 177 nC QG within nanosecond-scale timing windows while maintaining <10 ns skew across parallel devices.
BUK664R8-75C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 177 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 263W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK664R8-75C,118 FAQ
1.How can I place an order for BUK664R8-75C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK664R8-75C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK664R8-75C,118 reliable?
The price and inventory of BUK664R8-75C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK664R8-75C,118 is usually 5 days.
3.What payment methods are accepted for BUK664R8-75C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK664R8-75C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK664R8-75C,118?
BUK664R8-75C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK664R8-75C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK664R8-75C,118?
For technical support, including BUK664R8-75C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK664R8-75C,118 requirements.
6.How does Aetrix verify that BUK664R8-75C,118 is sourced from the original manufacturer or authorized distributors?
All BUK664R8-75C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK664R8-75C,118 meets industry standards.
7.What is the process for return or replacement of BUK664R8-75C,118?
All BUK664R8-75C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK664R8-75C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK664R8-75C,118 part is unused and in its original packaging.
Return procedure for BUK664R8-75C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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