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Nexperia USA Inc. BUK6C2R1-55C,118
- Part No.:
- BUK6C2R1-55C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
BUK6C2R1-55C,118.pdf
- Description:
- MOSFET N-CH 55V 228A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,830
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Product details
Overview
BUK6C2R1-55C,118 from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS FET in SOT427 (D2PAK) package, designed for high-current automotive power switching. It delivers 55 V drain-source voltage rating, 1.9 mΩ typical RDS(on) at 10 V gate drive and 228 A continuous drain current at Tmb = 25 °C, enabling robust operation in electric power steering and Start-Stop micro-hybrid systems.
For engineers reviewing the BUK6C2R1-55C,118 datasheet, BUK6C2R1-55C,118 pinout, BUK6C2R1-55C,118 application, or BUK6C2R1-55C,118 equivalent, key selection criteria include its 175 °C junction temperature rating, 770 mJ unclamped avalanche energy, low gate charge (253 nC total), and compatibility with both standard and logic-level gate drivers in thermally constrained 12 V automotive environments.
Technical Context
This intermediate-level gate drive MOSFET uses TrenchMOS technology to achieve ultra-low on-resistance while maintaining ruggedness for automotive transients. Its gate threshold voltage ranges from 0.8 V at 175 °C to 2.8 V at 25 °C, supporting stable turn-on across wide temperature excursions.
The device features a 7-pin SOT427 package with 5 source terminals and a mounting base tied to drain, enabling high-current conduction paths and efficient thermal coupling to heatsinks. Its 0.5 K/W junction-to-mounting-base thermal resistance supports high-power dissipation up to 300 W at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage for 12 V automotive system surge protection and load dump tolerance. |
| RDS(on) | 1.9 mΩ typ @ 10 V, 90 A, 25 °C - Enables <1.7 W conduction loss at 90 A, critical for minimizing thermal stress in high-duty-cycle motor drives. |
| ID | 228 A continuous @ Tmb = 25 °C - Supports peak currents in electric power steering and transmission control without derating at board level. |
| EAS | 770 mJ unclamped avalanche - Withstands repetitive inductive switching events in solenoid and lamp loads without failure. |
| QG(tot) | 253 nC @ 10 V - Determines gate driver power requirement; enables fast switching with moderate gate resistor values in high-frequency PWM applications. |
| Tj max | 175 °C - Allows operation in under-hood environments where ambient temperatures exceed 105 °C, meeting AEC-Q101 Grade 0 requirements. |
| Rth(j-mb) | 0.5 K/W - Enables direct thermal path to heatsink, reducing junction temperature rise by ~115 K per 230 W dissipated. |
Pinout & Package
SOT427 (D2PAK) plastic single-ended surface-mounted package with 7 leads (one lead cropped); mounting base electrically connected to drain and serves as primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - Controls channel conduction; requires ≤20 V DC gate-source voltage for safe operation. |
| 2, 3, 5, 6 | S | Source return path - Four dedicated source pins minimize parasitic inductance and resistive drop in high-di/dt motor commutation. |
| 4 | D | Drain connection - Not accessible externally; internally bonded to mounting base for low-inductance high-current output routing. |
| mb | D (mounting base) | Primary drain terminal and thermal interface - Must be soldered to PCB copper pour or heatsink for rated power handling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock per JESD47. |
| 175 °C junction rating | Enables uninterrupted operation in engine bay locations where ambient exceeds 105 °C without thermal shutdown. |
| Low RDS(on) at 4.5 V gate drive | 2.6 mΩ typ - Ensures full enhancement with 5 V logic-level microcontrollers, eliminating need for gate boosters in 12 V systems. |
| High avalanche energy | 770 mJ - Absorbs energy from inductive kickback in solenoid and motor windings without requiring external snubbers. |
| Multi-source pin configuration | Four independent source terminals - Reduces current density per bond wire and minimizes common-source inductance during fast switching. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Systems |
|---|---|
|
Use Scenario: High-current H-bridge motor driver controlling 12 V EPS assist motor during parking maneuvers and highway steering. IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration, handling bidirectional 200+ A peak currents with <100 ns switching transitions. Use Value: 1.9 mΩ RDS(on) limits I²R losses to <80 W at 200 A, enabling compact heatsink design while maintaining 175 °C junction safety margin. |
Use Scenario: Starter motor engagement/disengagement and battery management during engine restart in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-side load switch isolating starter circuit from battery during idle; handles 320 A pulsed inrush current per AEC transient profile. Use Value: 770 mJ avalanche rating withstands repeated cranking-induced inductive spikes without degradation, extending service life beyond 100,000 cycles. |
| Transmission Control Solenoids | LED Headlamp Dimming Drivers |
|
Use Scenario: PWM-controlled linear actuation of hydraulic pressure solenoids in automatic transmissions requiring precise current regulation. IC Role / Device Role / Timing Role: Low-side current sink modulating 5–15 A solenoid current at 1–10 kHz, with fast turn-off to prevent valve chatter. Use Value: 412 ns turn-off delay and 190 ns fall time ensure accurate duty cycle fidelity, reducing solenoid hysteresis and improving shift smoothness. |
Use Scenario: High-efficiency dimming control of 60 W LED headlamp arrays using synchronous buck topology with integrated high-side switch. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode, operating at 200 kHz with minimal conduction loss. Use Value: 2.3 mΩ max RDS(on) at 175 °C reduces forward voltage drop to <0.5 V at 20 A, increasing system efficiency by >3% versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF8AG | 40 V VDS, 2.0 mΩ RDS(on), 220 A ID, same SOT427 package | Limited to 40 V systems; unsuitable for 55 V load-dump scenarios in 12 V automotive | Select only if system maximum bus voltage remains ≤42 V and avalanche robustness is secondary. |
| IRFB4115PBF | 150 V VDS, 3.8 mΩ RDS(on), TO-220AB package, no AEC-Q101 certification | Higher voltage margin but larger footprint and lower current density; not qualified for automotive use | Acceptable for industrial motor drives where AEC compliance and space constraints are not required. |
Compared with STL220N4LF8AG and IRFB4115PBF, BUK6C2R1-55C,118 uniquely balances 55 V rating, AEC-Q101 qualification, 1.9 mΩ on-resistance, and SOT427 thermal performance-making it the only option validated for high-reliability, high-current 12 V automotive power switching where voltage transients and thermal cycling coexist.
Availability
BUK6C2R1-55C,118 is available at Aetrix Electronics and suitable for electric power steering, Start-Stop micro-hybrid systems, and transmission control solenoids requiring stable component supply across extended automotive production lifecycles.
Supply support for BUK6C2R1-55C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable components for automotive, industrial, and consumer applications, with core expertise in logic, discretes, and MOSFETs.
This part belongs to Nexperia's AEC-Q101 qualified TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical architectures.
FAQ
What gate drive voltage is required for full enhancement?
BUK6C2R1-55C,118 achieves full enhancement at VGS = 10 V, delivering 1.9 mΩ RDS(on). It remains functional down to 4.5 V (2.6 mΩ typ), enabling direct drive from 5 V microcontrollers without level-shifting. Gate threshold voltage is 2.3 V typ at 25 °C, ensuring reliable turn-on with standard logic outputs.
How is thermal performance affected by PCB layout?
Thermal resistance Rth(j-mb) = 0.5 K/W assumes full-surface soldering of the mounting base to ≥1000 mm² of 2 oz copper with ≥6 thermal vias. Reducing copper area or omitting vias increases junction temperature by up to 40 K at 200 W, risking thermal runaway. The four source pins must also be routed to low-impedance ground planes to minimize switching noise.
Can this MOSFET replace older D2PAK devices in existing designs?
Yes-BUK6C2R1-55C,118 uses the industry-standard SOT427 (D2PAK) footprint and shares identical pinout with legacy devices like BUZ70 or IRF1405. However, its lower RDS(on) and higher avalanche rating may require gate resistor adjustment to maintain optimal dV/dt control and EMI performance in existing layouts.
Is the mounting base electrically isolated from other terminals?
No-the mounting base is internally connected to the drain terminal (pin 4), making it live at drain potential. It must be electrically insulated from heatsinks unless the heatsink is referenced to drain voltage. This configuration enables low-inductance high-current output routing but prohibits floating heatsink implementations without isolation hardware.
BUK6C2R1-55C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 228A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 253 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 16000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK-7
BUK6C2R1-55C,118 FAQ
1.How can I place an order for BUK6C2R1-55C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK6C2R1-55C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK6C2R1-55C,118 reliable?
The price and inventory of BUK6C2R1-55C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6C2R1-55C,118 is usually 5 days.
3.What payment methods are accepted for BUK6C2R1-55C,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6C2R1-55C,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK6C2R1-55C,118?
BUK6C2R1-55C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK6C2R1-55C,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK6C2R1-55C,118?
For technical support, including BUK6C2R1-55C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6C2R1-55C,118 requirements.
6.How does Aetrix verify that BUK6C2R1-55C,118 is sourced from the original manufacturer or authorized distributors?
All BUK6C2R1-55C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6C2R1-55C,118 meets industry standards.
7.What is the process for return or replacement of BUK6C2R1-55C,118?
All BUK6C2R1-55C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6C2R1-55C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK6C2R1-55C,118 part is unused and in its original packaging.
Return procedure for BUK6C2R1-55C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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