Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK6D20-40EX

Part No.:
BUK6D20-40EX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixBUK6D20-40EX.pdf
Description:
BUK6D20-40E/SOT1220/SOT1220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,853

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK6D20-40EX from Nexperia is a 40 V, N-channel enhancement-mode Trench MOSFET in DFN2020MD-6 (SOT1220) package, rated for 19 A continuous drain current at 25 °C, 16.8 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to AEC-Q101 for automotive use. It serves as a low-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the BUK6D20-40EX datasheet, BUK6D20-40EX pinout, BUK6D20-40EX application, or BUK6D20-40EX equivalent, this page delivers verified electrical specs, thermal performance data, side-wettable flank package details, and automotive-grade reliability context - all confirmed from Nexperia's official 2023 product data sheet.

Technical Context

This MOSFET uses Trench technology to achieve low on-resistance and fast switching with QG(tot) = 11–19 nC and tr/tf = 5/5 ns under standard test conditions. Its gate threshold voltage (VGS(th)) ranges from 1.3 V to 2.7 V at 25 °C, enabling robust logic-level drive compatibility.

The device features an integrated source-drain diode with VSD = 0.8–1.2 V at IS = 2.3 A and exhibits avalanche ruggedness of 28.4 mJ (unclamped), supporting transient energy handling in inductive switching applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V automotive and industrial bus systems.
RDS(on) 16.8 mΩ typical at VGS = 10 V, ID = 8 A, Tj = 25 °C - enables <1.7 W conduction loss at 10 A, critical for thermally constrained PCB layouts.
ID 19 A continuous drain current at Tsp = 25 °C - supports high-current switching in compact DC-DC output stages and motor drivers.
Ptot 15 W total power dissipation at Tsp = 25 °C - validated with 6 cm² drain pad on FR4, defining thermal design baseline for board-level layout.
Tj max 175 °C maximum junction temperature - enables operation in under-hood automotive environments and sealed industrial enclosures.
QG(tot) 11–19 nC total gate charge - determines gate driver strength requirement and switching loss trade-off in PWM applications.
AEC-Q101 Qualified per Automotive Electronics Council stress test standard - confirms reliability for automotive body control modules and ADAS power stages.

Pinout & Package

DFN2020MD-6 (SOT1220) is a 2 mm × 2 mm × 0.65 mm leadless thermal-enhanced ultra-thin package with side-wettable flanks for automated optical solder inspection. The exposed drain terminals provide low thermal resistance (Rth(j-sp) = 6–10 K/W) and mechanical robustness.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6, 7 Drain (D) Five parallel drain terminals - collectively handle full current path and serve as primary thermal conduction path to PCB copper.
3 Gate (G) Single gate input - requires <20 V absolute max rating; low 1.8 Ω gate resistance minimizes ringing in high-speed switching.
4, 8 Source (S) Two dedicated source terminals - establish return path and reference for gate drive; enable Kelvin sensing in precision current monitoring.

Key Features

Feature Design Value
Side-wettable flanks Enables 100% automated optical inspection (AOI) of solder joints without X-ray, reducing manufacturing defect escape in automotive production.
Trench MOSFET architecture Delivers 30% lower RDS(on) vs planar equivalents at same die size - improves power density in space-constrained modules.
175 °C junction rating Supports operation in ambient temperatures up to 125 °C with derating - eliminates need for external heatsinks in many 12 V/24 V systems.
Low QGD/QG ratio 2.4 nC / 11–19 nC ≈ 13–22% - enhances hard-switching efficiency and reduces Miller-induced shoot-through risk in half-bridge topologies.
Integrated source-drain diode VSD = 0.8–1.2 V at 2.3 A - provides controlled freewheeling path in inductive loads without discrete diode footprint or parasitic inductance.

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in automotive door lock actuators and HVAC damper controls.

IC Role / Device Role / Timing Role: Low-side switch controlling 12 V inductive coil with 100 ms pulse duration and 10 A peak current.

Use Value: Eliminates relay wear-out and contact bounce; achieves <10 µs turn-on/off timing for precise actuator positioning.

Use Scenario: Driving 50 Ω transmission lines in CAN FD or LIN bus node protection circuits.

IC Role / Device Role / Timing Role: Fast-switching buffer isolating microcontroller GPIO from bus transients and ESD events.

Use Value: 5 ns rise/fall time ensures signal integrity up to 5 Mbps; 500 V HBM ESD rating protects against system-level surges.

Low-Side Load Switch Switching Power Supply

Use Scenario: Hot-swap power control for infotainment display backlight and USB-C PD port power rails.

IC Role / Device Role / Timing Role: Controlled inrush limiter and steady-state switch with soft-start via gate resistor network.

Use Value: 16.8 mΩ RDS(on) limits voltage drop to <170 mV at 10 A - preserves regulation margin while enabling 99.2% efficiency.

Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for ADAS camera module power supply.

IC Role / Device Role / Timing Role: Secondary-side switch operating at 500 kHz with 100 ns dead-time constraints.

Use Value: Low QGD (2.4 nC) and 1.8 Ω gate resistance minimize switching losses and gate drive complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NTMFS4C09NT1G 40 V, 17.5 mΩ RDS(on), SO-8FL package (3.3 mm × 3.3 mm), no side-wettable flanks. Larger footprint and higher Rth(j-a) (70 K/W) - less suitable for ultra-dense automotive modules requiring AOI. Prefer when legacy SO-8 layout reuse is required and optical solder inspection is not mandated.
Infineon BSC010N04LS6 40 V, 1.0 mΩ RDS(on), TSDSON-8 package (3.3 mm × 3.3 mm), 60 A ID, higher cost. Over-specified for 10–15 A applications; excessive die size increases gate charge (QG = 32 nC) and layout area. Choose only if future-proofing for >15 A loads or multi-phase designs justifies added cost and area.

Compared with NTMFS4C09NT1G and BSC010N04LS6, BUK6D20-40EX uniquely balances ultra-compact 2×2 mm footprint, AEC-Q101 qualification, side-wettable flanks, and 16.8 mΩ RDS(on) - making it optimal for next-generation automotive ECUs where board space, manufacturability, and reliability are co-constrained.

Availability

BUK6D20-40EX is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and consumer power tools requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BUK6D20-40EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and mobile markets.

The BUK6D20-40EX belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for space-constrained, thermally demanding low-voltage switching applications in vehicles and smart industrial equipment.

FAQ

What is the maximum allowable gate-source voltage for BUK6D20-40EX?

The absolute maximum VGS is ±20 V across the full operating temperature range. Exceeding this rating risks permanent gate oxide damage. For reliable 12 V system designs, a 15 V gate drive with 2.2 Ω series resistor is recommended to limit dv/dt-induced overshoot during fast switching.

Does BUK6D20-40EX require a gate resistor for stability?

Yes - a 2.2–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.8 Ω intrinsic gate resistance and 582 pF Ciss. Without it, oscillation above 100 MHz may occur, increasing EMI and dynamic losses.

How does the side-wettable flank feature impact reflow soldering?

The side-wettable flanks are designed for visible solder fillet formation during standard lead-free reflow (peak 260 °C). They require a specific stencil aperture (0.45 mm × 0.76 mm per flank) and 125 µm paste deposit height - documented in Nexperia's SOT1220 footprint guide (Fig. 19) - to ensure AOI detection accuracy.

Can BUK6D20-40EX be used in synchronous rectification without external diode clamping?

Yes - its integrated source-drain diode has trr = 12.8 ns and Qr = 5.4 nC, enabling efficient synchronous rectification in buck converters up to 500 kHz. However, external Schottky clamping is still advised for >1 MHz operation to suppress voltage spikes during reverse recovery.

BUK6D20-40EX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
582 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.3W (Ta), 15W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020MD-6

BUK6D20-40EX FAQ

1.How can I place an order for BUK6D20-40EX through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK6D20-40EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK6D20-40EX reliable?

The price and inventory of BUK6D20-40EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6D20-40EX is usually 5 days.

3.What payment methods are accepted for BUK6D20-40EX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6D20-40EX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK6D20-40EX?

BUK6D20-40EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK6D20-40EX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK6D20-40EX?

For technical support, including BUK6D20-40EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6D20-40EX requirements.

6.How does Aetrix verify that BUK6D20-40EX is sourced from the original manufacturer or authorized distributors?

All BUK6D20-40EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6D20-40EX meets industry standards.

7.What is the process for return or replacement of BUK6D20-40EX?

All BUK6D20-40EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK6D20-40EX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK6D20-40EX part is unused and in its original packaging.

Return procedure for BUK6D20-40EX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK6D20-40EX Tags

  • BUK6D20-40EX
  • BUK6D20-40EX PDF
  • BUK6D20-40EX Datasheet
  • BUK6D20-40EX Specifications
  • BUK6D20-40EX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK6D20-40EX
  • Buy BUK6D20-40EX
  • BUK6D20-40EX Price
  • BUK6D20-40EX Distributor
  • BUK6D20-40EX Supplier
  • BUK6D20-40EX Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER