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NXP Semiconductors BUK6E4R0-75C,127
- Part No.:
- BUK6E4R0-75C,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK6E4R0-75C,127.pdf
- Description:
- NEXPERIA BUK6E4R0-75C - 120A, 75
- Quantity:
- Payment:
- Shipping:
Inventory:19,000
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Product details
Overview
BUK6E4R0-75C from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in I2PAK (SOT226) package, rated for 75 V drain-source voltage, 120 A continuous drain current at 25 °C mounting base temperature, and 3.6 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current power switch in automotive 12 V systems requiring robust thermal performance up to 175 °C junction temperature.
For engineers reviewing the BUK6E4R0-75C datasheet, BUK6E4R0-75C pinout, BUK6E4R0-75C application, or BUK6E4R0-75C equivalent, key selection criteria include its 523 mJ non-repetitive avalanche energy rating, 0.49 K/W junction-to-mounting-base thermal resistance, and suitability for intermediate-level gate drive sources in thermally demanding automotive subsystems.
Technical Context
This device employs advanced TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness. Its gate threshold voltage ranges from 1.8 V to 2.8 V at 25 °C, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.
The integrated source-drain diode exhibits 0.8 V forward voltage at 25 A and 25 °C, with 72 ns reverse recovery time and 218 nC recovered charge - critical for synchronous rectification and inductive load switching in power steering and transmission control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V maximum - supports full 12 V automotive battery transients including load dump up to ISO 7637-2 Pulse 5a. |
| RDS(on) | 3.6 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements. |
| ID | 120 A continuous at Tmb = 25 °C - limited by I2PAK package thermal capability, not die saturation. |
| EAS | 523 mJ non-repetitive avalanche energy - sustains unclamped inductive switching events without failure in solenoid or motor control. |
| Rth(j-mb) | 0.49 K/W - allows direct mounting to heatsink for efficient thermal transfer in space-constrained engine bay modules. |
| QG(tot) | 234 nC total gate charge at VGS = 10 V - determines driver strength requirement for <500 ns turn-off delay in high-frequency PWM. |
| Tj max | 175 °C - qualified per AEC-Q101 for sustained operation in under-hood environments. |
Pinout & Package
Package: I2PAK (SOT226), plastic single-ended TO-262 variant with isolated mounting base electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires 10 V drive for full enhancement; gate leakage <100 nA at ±20 V. |
| 2 (D) | Drain | Main high-side power path; internally bonded to mounting base for low-inductance thermal and electrical connection. |
| 3 (S) | Source | Power return node; also serves as reference for gate drive; internal source inductance 7.5 nH affects switching ringing. |
| Mounting base (mb) | Drain extension | Electrically tied to drain pin; provides primary thermal interface; must be insulated from chassis unless drain is ground-referenced. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity, and mechanical shock per JESD47. |
| 175 °C junction rating | Enables operation in engine compartment locations where ambient exceeds 125 °C without derating. |
| Low RDS(on) × QG figure of merit | 3.6 mΩ × 234 nC = 842 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V power switching. |
| High avalanche energy | 523 mJ unclamped EAS - eliminates need for external snubbers in relay replacement and solenoid drive. |
| Thermally optimized I2PAK | 0.49 K/W Rth(j-mb) enables >200 W dissipation with 40 K ΔT to heatsink - suitable for compact power modules. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge phase leg in 12 V EPS motor driver, handling bidirectional 80–100 A peak currents during assist maneuvers. IC Role / Device Role / Timing Role: Main power switch with fast turn-off (<500 ns) to minimize shoot-through risk and support 20 kHz PWM commutation. Use Value: 3.6 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 6 mΩ devices, lowering MOSFET temperature rise and improving torque response stability. |
Use Scenario: Starter motor engagement/disengagement and battery isolation in 12 V start-stop systems with frequent cycling. IC Role / Device Role / Timing Role: High-reliability power switch controlling starter solenoid coil and auxiliary loads during engine cranking and restart. Use Value: 523 mJ avalanche rating withstands inductive kickback from solenoid de-energization without clamping diodes, simplifying PCB layout and BOM. |
| Transmission Control Solenoids | LED Headlamp Dimming |
|
Use Scenario: PWM-driven linear current regulator for electro-hydraulic pressure control valves in automatic transmissions. IC Role / Device Role / Timing Role: Low-loss, thermally stable switch operating continuously at 25–40 A with 10–20 kHz modulation. Use Value: 175 °C junction rating ensures uninterrupted function during prolonged gear-shifting sequences under hood temperatures exceeding 150 °C. |
Use Scenario: High-side dimming switch for adaptive LED headlamps requiring precise 0–100% brightness control in harsh automotive environments. IC Role / Device Role / Timing Role: Robust power stage delivering 5–15 A DC or PWM current with minimal thermal drift across -40 °C to +125 °C ambient. Use Value: 0.49 K/W thermal resistance maintains <100 °C junction temperature at 10 A/12 V even with minimal heatsinking, extending LED lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 4.7 mΩ RDS(on) at 10 V, 200 A rating, PowerFLAT 5x6 package; lower thermal resistance (0.35 K/W) but no AEC-Q101 certification. | Preferred for non-automotive industrial motor drives where qualification is not required and higher current headroom is needed. | Select STL220N4F7AG only if AEC-Q101 compliance is unnecessary and board space allows larger footprint. |
| IRF1404ZPBF | 4.0 mΩ RDS(on), TO-220AB package, 200 A rating, no AEC-Q101 qualification; higher Rth(j-a) (65 K/W) limits power density. | Suitable for cost-sensitive 12 V aftermarket accessories where under-hood thermal management is less stringent. | Choose IRF1404ZPBF when qualification is waived and mounting base thermal path is unavailable. |
Compared with STL220N4F7AG and IRF1404ZPBF, BUK6E4R0-75C uniquely delivers AEC-Q101 compliance, 0.49 K/W thermal resistance in I2PAK, and 523 mJ avalanche ruggedness - making it the only option qualified for safety-critical automotive power switching where reliability under transient stress is mandatory.
Availability
BUK6E4R0-75C is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across automotive production lifecycles.
Supply support for BUK6E4R0-75C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK6E4R0-75C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V system switching where AEC-Q101 compliance and avalanche robustness are non-negotiable.
FAQ
What is the maximum continuous drain current rating for BUK6E4R0-75C?
The BUK6E4R0-75C supports 120 A continuous drain current at Tmb = 25 °C, as specified in Table 1 and confirmed in Figure 1 of the datasheet. This rating is package-limited and decreases with mounting base temperature - at Tmb = 100 °C, the device still delivers 120 A due to its thermal design, but derating applies beyond that point per Figure 1.
Is BUK6E4R0-75C qualified for automotive applications?
Yes, BUK6E4R0-75C is fully AEC-Q101 qualified for automotive use, as stated in section 1.1 and verified in the "Features and benefits" list. It meets stress test requirements for temperature cycling, humidity, and mechanical shock, and is designed for high-performance automotive systems including power steering and transmission control.
What is the gate-source threshold voltage range for BUK6E4R0-75C?
The BUK6E4R0-75C has a gate-source threshold voltage (VGS(th)) of 1.8 V to 2.8 V at Tj = 25 °C and ID = 1 mA, as shown in Table 6. At elevated temperature (175 °C), the minimum drops to 0.8 V, ensuring turn-on stability across the full automotive junction temperature range.
Does BUK6E4R0-75C have avalanche capability, and how much?
Yes, BUK6E4R0-75C is rated for 523 mJ non-repetitive drain-source avalanche energy (EDS(AL)S) under specified conditions: ID = 120 A, Vsup ≤75 V, RGS = 50 Ω, VGS = 10 V, and Tj(init) = 25 °C. This is documented in Tables 1 and 4 and supports robust inductive load switching without external protection.
What package type does BUK6E4R0-75C use, and how is the mounting base connected?
BUK6E4R0-75C uses the I2PAK (SOT226) package, a plastic single-ended TO-262 variant. As shown in Table 2 and Figure 17, the mounting base (mb) is electrically connected to the drain terminal (Pin 2), providing both thermal conduction and low-inductance power path - requiring electrical isolation from the heatsink unless drain is referenced to system ground.
BUK6E4R0-75C,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 234 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK6E4R0-75C,127 FAQ
1.How can I place an order for BUK6E4R0-75C,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK6E4R0-75C,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK6E4R0-75C,127 reliable?
The price and inventory of BUK6E4R0-75C,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK6E4R0-75C,127 is usually 5 days.
3.What payment methods are accepted for BUK6E4R0-75C,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK6E4R0-75C,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK6E4R0-75C,127?
BUK6E4R0-75C,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK6E4R0-75C,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK6E4R0-75C,127?
For technical support, including BUK6E4R0-75C,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK6E4R0-75C,127 requirements.
6.How does Aetrix verify that BUK6E4R0-75C,127 is sourced from the original manufacturer or authorized distributors?
All BUK6E4R0-75C,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK6E4R0-75C,127 meets industry standards.
7.What is the process for return or replacement of BUK6E4R0-75C,127?
All BUK6E4R0-75C,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK6E4R0-75C,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK6E4R0-75C,127 part is unused and in its original packaging.
Return procedure for BUK6E4R0-75C,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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