Nexperia USA Inc. BUK7109-75ATE,118

Overview

BUK7109-75ATE,118 from NXP Semiconductors is a standard-level N-channel TrenchPLUS MOSFET in D2PAK (SOT426) package, rated for 75 V V_DS, 8 mΩ R_DS(on) at 10 V V_GS and 25 °C, with integrated temperature-sense diode (SF = −1.54 mV/K), ESD protection diodes, and AEC-Q101 qualification for automotive EPAS and variable valve timing systems.

For engineers reviewing the BUK7109-75ATE,118 datasheet, BUK7109-75ATE,118 pinout, BUK7109-75ATE,118 application, or BUK7109-75ATE,118 equivalent, key selection criteria include its 75 A continuous drain current capability at T_mb = 25 °C, junction-to-mounting-base thermal resistance of 0.55 K/W, integrated temperature sensing for closed-loop thermal management, and robust 6 kV HBM ESD rating.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and fast switching, with a gate threshold voltage of 2–4 V at 25 °C and 1–4.4 V across −55 to 175 °C. Its internal source-drain diode features 0.85–1.2 V forward voltage at 25 A and 75 ns reverse recovery time under defined conditions.

The integrated temperature sense diode provides linear voltage output (648–668 mV at 25 °C) with hysteresis ≤50 mV and a stable temperature coefficient (−1.4 to −1.68 mV/K), enabling direct analog thermal monitoring without external sensors. Isolation voltage between FET and TSD is ±100 V.

Key Specifications

Pinout & Package

Package: D2PAK (SOT426), plastic surface-mount package with isolated mounting base electrically connected to drain; 5-terminal configuration with lead 1 cropped per ordering specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power FET applications.

Compared with STL220N4F7AG and IPP040N04LG, BUK7109-75ATE,118 uniquely combines 75 V rating, integrated temperature sensing, and AEC-Q101 qualification-making it the only option among the three suitable for 24 V EPAS and VVT systems requiring both voltage headroom and real-time thermal feedback.

Availability

BUK7109-75ATE,118 is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), Variable Valve Timing (VVT), and Electric Brake Booster (EBB) systems requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK7109-75ATE,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a Dutch semiconductor company specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with core expertise in RF, analog, power management, and embedded processing.

BUK7109-75ATE,118 belongs to NXP's TrenchPLUS automotive MOSFET product line, designed specifically for high-reliability, thermally aware power switching in safety-critical vehicle subsystems such as steering, braking, and engine control.

FAQ

What is the maximum continuous drain current for BUK7109-75ATE,118 at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the continuous drain current is limited to 75 A due to package thermal constraints-not junction limits-as confirmed in Table 4 of the datasheet. This reflects the safe operating area boundary where power dissipation is capped by solder joint and leadframe thermal resistance rather than silicon capability.

How is the temperature sense diode electrically isolated from the MOSFET structure?

The temperature sense diode (TSD) is monolithically integrated but galvanically isolated from the main FET die with a minimum isolation voltage of ±100 V (Visol(FET-TSD)), verified per datasheet Table 4. This allows the TSD anode and cathode to be biased independently of the drain-source path, enabling accurate thermal measurement even during high dv/dt switching events.

Does BUK7109-75ATE,118 require external gate resistors for automotive EMI compliance?

Yes-while the device's 35 ns turn-on delay and 100 ns fall time support fast switching, NXP recommends gate resistors (typically 5–22 Ω) to dampen ringing caused by internal L_D = 2.5 nH and L_S = 7.5 nH, especially in high-current EPAS inverters. Layout-dependent parasitics necessitate empirical tuning per board design.

Can the integrated temperature sense diode replace an external NTC thermistor in EPAS control loops?

Yes-the TSD's linear −1.54 mV/K coefficient and low hysteresis (≤50 mV) enable direct substitution for NTC-based thermal monitoring when biased with a stable 250 µA current source and 12-bit+ ADC. Calibration at two points (e.g., −40 °C and 125 °C) achieves ±1.2 °C accuracy across the full −55 to 175 °C range.