Nexperia USA Inc. BUK714R1-40BT,118
- Part No.:
- BUK714R1-40BT,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Datasheet:
-
BUK714R1-40BT,118.pdf
- Description:
- MOSFET N-CH 40V 75A SOT426
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK714R1-40BT,118 from NXP Semiconductors is a standard-level N-channel TrenchMOS power FET in D2PAK (SOT426) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 100 °C, and 3.4 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It integrates a temperature-sensing diode and is AEC-Q101 qualified for automotive critical loads including EPAS and 12 V power switching.
For engineers reviewing the BUK714R1-40BT,118 datasheet, BUK714R1-40BT,118 pinout, BUK714R1-40BT,118 application, or BUK714R1-40BT,118 equivalent, key selection criteria include its 175 °C junction rating, integrated thermal sensing capability, low-inductance internal layout (LD = 2.5 nH), and compliance with automotive reliability standards.
Technical Context
This device uses NXP's TrenchPLUS technology to deliver low RDS(on) while maintaining robust avalanche ruggedness (1.5 J unclamped) and fast switching (td(off) = 141 ns). Its gate charge profile (QG(tot) = 83 nC) supports efficient PWM control in high-current DC loads.
The integrated temperature-sense diode provides direct junction temperature monitoring via forward voltage (VF(TSD) = 1.60 V @ 1 mA, Tj = 25 °C) with linear coefficient (−2.83 mV/K), enabling closed-loop thermal management without external sensors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports 12 V automotive systems with margin against load-dump transients. |
| RDS(on) | 3.4 mΩ typ @ VGS = 10 V, ID = 50 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements. |
| ID (cont) | 75 A @ Tmb = 100 °C - package-limited current suitable for sustained motor/solenoid drive. |
| Tj max | 175 °C - allows operation in thermally demanding under-hood environments without derating. |
| Rth(j-mb) | 0.55 K/W - enables efficient heat transfer to PCB copper or heatsink via mounting base (drain-connected). |
| VF(TSD) | 1.60 V @ IF = 1 mA, Tj = 25 °C - calibrated forward voltage for accurate real-time junction temperature measurement. |
| EAS | 1.5 J unclamped avalanche energy - withstands inductive turn-off stress in solenoid/motor circuits without snubbers. |
Pinout & Package
Package: D2PAK (SOT426), plastic single-ended surface-mounted package with 5 leads (one cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET switching; requires 10 V drive for full enhancement and minimal RDS(on). |
| 2 (A) | Anode | Anode of integrated temperature-sense diode; used with external current source for junction temperature readout. |
| 3 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path. |
| 4 (K) | Cathode | Cathode of integrated temperature-sense diode; referenced to source for differential VF measurement. |
| 5 (S) | Source | Power return and reference node; connects to system ground or low-side switch node; defines VGS control reference. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature-sense diode | Enables real-time junction temperature monitoring with ±2 °C accuracy using standard ADC circuitry, eliminating need for external thermal sensors. |
| AEC-Q101 qualification | Validated for automotive safety-critical applications including EPAS, meeting stress test requirements for temperature cycling, HTRB, and ESD (4 kV HBM). |
| Low RDS(on) × QG figure-of-merit | 282 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor control stages. |
| Drain-connected mounting base | Provides <0.55 K/W thermal resistance to heatsink and reduces parasitic inductance (LD = 2.5 nH), improving EMI and dI/dt handling. |
| Robust body diode | Reverse recovery time trr = 70 ns and Qr = 55 nC support freewheeling in inductive loads without external Schottky catch diodes. |
Applications
| Electrical Power Assisted Steering (EPAS) | 12 V Automotive Load Switching |
|---|---|
|
Use Scenario: High-reliability, high-current switching of EPAS motor phases in compact ECU modules exposed to under-hood temperatures up to 150 °C ambient. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling brushed or brushless motor windings; operates in PWM mode at 10–20 kHz. Use Value: 175 °C Tj rating and integrated temperature sensing enable closed-loop thermal derating, preventing torque loss during sustained assist events. |
Use Scenario: Solid-state replacement of mechanical relays for battery-fed 12 V loads such as HVAC actuators, lighting modules, and fuel pumps. IC Role / Device Role / Timing Role: Single-pole, high-current power switch with fast turn-on/turn-off (td(on) = 38 ns, tf = 90 ns) for precise load timing and reduced arcing. Use Value: 75 A continuous current and 1.5 J avalanche energy eliminate need for external snubbers or relay flyback protection in inductive load switching. |
| Motor & Solenoid Drive | Thermally Managed Power Distribution |
|
Use Scenario: Driving 12 V DC motors (e.g., seat adjusters, window lifts) and high-force solenoids (e.g., transmission shift actuators) in OEM modules. IC Role / Device Role / Timing Role: Main power switch with integrated thermal feedback loop; gate driven by microcontroller GPIO or dedicated driver IC. Use Value: On-chip temperature diode provides direct junction readout, allowing dynamic current limiting before reaching 175 °C Tj limit-improving functional safety compliance. |
Use Scenario: Centralized power distribution unit (PDU) managing multiple 12 V subsystems with real-time thermal monitoring and fault logging. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch with traceable thermal signature for predictive maintenance and diagnostics. Use Value: 0.55 K/W Rth(j-mb) and calibrated VF(TSD) enable accurate thermal modeling across production units, supporting ISO 26262 ASIL-B system-level analysis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A (Tmb = 25 °C), RDS(on) = 1.7 mΩ; no integrated temperature diode; PowerFLAT 5x6 package. | Lacks on-die thermal sensing; requires external sensor for junction monitoring; higher peak current but lower thermal density per mm². | Select when maximum current density and minimal footprint are prioritized over embedded thermal diagnostics. |
| ON Semiconductor NTMFS4C09NT1G | 40 V, 100 A (Tmb = 100 °C), RDS(on) = 2.9 mΩ; no temperature diode; SO-8FL package with exposed drain pad. | Lower RDS(on) but smaller thermal mass; no integrated sensing; limited to ≤150 °C Tj rating. | Choose for cost-sensitive, non-safety-critical 12 V switching where thermal monitoring is handled externally. |
Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK714R1-40BT,118 uniquely combines AEC-Q101 qualification, 175 °C operation, and factory-calibrated temperature sensing in a D2PAK package-making it the only option among the three that satisfies ASIL-B thermal monitoring requirements without added components.
Availability
BUK714R1-40BT,118 is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), 12 V automotive load switching, and motor/solenoid drive applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for BUK714R1-40BT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
BUK714R1-40BT,118 belongs to NXP's TrenchPLUS automotive power MOSFET product line, engineered specifically for high-reliability, thermally constrained 12 V vehicle systems requiring integrated diagnostics and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current for BUK714R1-40BT,118 at 100 °C mounting base temperature?
The maximum continuous drain current is 75 A at Tmb = 100 °C, as specified in Table 1 (Quick reference data) and confirmed in Figure 2 of the datasheet. This value is package-limited-not silicon-limited-and remains constant up to Tmb = 100 °C before thermal derating begins.
How is the integrated temperature-sense diode used in practice?
The diode (anode = Pin 2, cathode = Pin 4) is biased with a constant 1 mA current source; its forward voltage (VF) is measured differentially across Pins 2 and 4. Using the known temperature coefficient (−2.83 mV/K), junction temperature is calculated as Tj = 25 °C + (1.60 V − VF)/0.00283, enabling real-time thermal feedback without external sensors.
Is BUK714R1-40BT,118 suitable for high-frequency PWM motor control?
Yes-it supports PWM frequencies up to 20 kHz with low switching losses: total gate charge is 83 nC, turn-off delay is 141 ns, and output capacitance (Coss) is 1389–1667 pF. Its low internal inductance (LD = 2.5 nH from mounting base) minimizes voltage overshoot during hard switching in brushed DC motor H-bridge configurations.
Does BUK714R1-40BT,118 require a gate resistor for automotive EMI compliance?
A gate resistor of 10 Ω is recommended per Figure 14 characterization conditions and is sufficient to meet CISPR 25 Class 5 radiated emissions limits in typical 12 V motor drive layouts. The device's controlled dV/dt (via QGD/QGS ratio of ~1.6) and low Crss (527–721 pF) inherently suppress high-frequency ringing without requiring complex RC snubbing networks.
BUK714R1-40BT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchPLUS
- Package/Case:
- TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 83 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6808 pF @ 25 V
- FET Feature:
- Temperature Sensing Diode
- Power Dissipation (Max):
- 272W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK714R1-40BT,118 FAQ
1.How can I place an order for BUK714R1-40BT,118 through Aetrix?
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6.How does Aetrix verify that BUK714R1-40BT,118 is sourced from the original manufacturer or authorized distributors?
All BUK714R1-40BT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK714R1-40BT,118 meets industry standards.
7.What is the process for return or replacement of BUK714R1-40BT,118?
All BUK714R1-40BT,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK714R1-40BT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK714R1-40BT,118 part is unused and in its original packaging.
Return procedure for BUK714R1-40BT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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