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Nexperia USA Inc. BUK714R1-40BT,118

Part No.:
BUK714R1-40BT,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Datasheet:
AetrixBUK714R1-40BT,118.pdf
Description:
MOSFET N-CH 40V 75A SOT426
Quantity:
Payment:
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Shipping:
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Inventory:9,985

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Product details

Overview

BUK714R1-40BT,118 from NXP Semiconductors is a standard-level N-channel TrenchMOS power FET in D2PAK (SOT426) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 100 °C, and 3.4 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It integrates a temperature-sensing diode and is AEC-Q101 qualified for automotive critical loads including EPAS and 12 V power switching.

For engineers reviewing the BUK714R1-40BT,118 datasheet, BUK714R1-40BT,118 pinout, BUK714R1-40BT,118 application, or BUK714R1-40BT,118 equivalent, key selection criteria include its 175 °C junction rating, integrated thermal sensing capability, low-inductance internal layout (LD = 2.5 nH), and compliance with automotive reliability standards.

Technical Context

This device uses NXP's TrenchPLUS technology to deliver low RDS(on) while maintaining robust avalanche ruggedness (1.5 J unclamped) and fast switching (td(off) = 141 ns). Its gate charge profile (QG(tot) = 83 nC) supports efficient PWM control in high-current DC loads.

The integrated temperature-sense diode provides direct junction temperature monitoring via forward voltage (VF(TSD) = 1.60 V @ 1 mA, Tj = 25 °C) with linear coefficient (−2.83 mV/K), enabling closed-loop thermal management without external sensors.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum - supports 12 V automotive systems with margin against load-dump transients.
RDS(on) 3.4 mΩ typ @ VGS = 10 V, ID = 50 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements.
ID (cont) 75 A @ Tmb = 100 °C - package-limited current suitable for sustained motor/solenoid drive.
Tj max 175 °C - allows operation in thermally demanding under-hood environments without derating.
Rth(j-mb) 0.55 K/W - enables efficient heat transfer to PCB copper or heatsink via mounting base (drain-connected).
VF(TSD) 1.60 V @ IF = 1 mA, Tj = 25 °C - calibrated forward voltage for accurate real-time junction temperature measurement.
EAS 1.5 J unclamped avalanche energy - withstands inductive turn-off stress in solenoid/motor circuits without snubbers.

Pinout & Package

Package: D2PAK (SOT426), plastic single-ended surface-mounted package with 5 leads (one cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal for MOSFET switching; requires 10 V drive for full enhancement and minimal RDS(on).
2 (A) Anode Anode of integrated temperature-sense diode; used with external current source for junction temperature readout.
3 (D) Drain Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path.
4 (K) Cathode Cathode of integrated temperature-sense diode; referenced to source for differential VF measurement.
5 (S) Source Power return and reference node; connects to system ground or low-side switch node; defines VGS control reference.

Key Features

Feature Design Value
Integrated temperature-sense diode Enables real-time junction temperature monitoring with ±2 °C accuracy using standard ADC circuitry, eliminating need for external thermal sensors.
AEC-Q101 qualification Validated for automotive safety-critical applications including EPAS, meeting stress test requirements for temperature cycling, HTRB, and ESD (4 kV HBM).
Low RDS(on) × QG figure-of-merit 282 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor control stages.
Drain-connected mounting base Provides <0.55 K/W thermal resistance to heatsink and reduces parasitic inductance (LD = 2.5 nH), improving EMI and dI/dt handling.
Robust body diode Reverse recovery time trr = 70 ns and Qr = 55 nC support freewheeling in inductive loads without external Schottky catch diodes.

Applications

Electrical Power Assisted Steering (EPAS) 12 V Automotive Load Switching

Use Scenario: High-reliability, high-current switching of EPAS motor phases in compact ECU modules exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling brushed or brushless motor windings; operates in PWM mode at 10–20 kHz.

Use Value: 175 °C Tj rating and integrated temperature sensing enable closed-loop thermal derating, preventing torque loss during sustained assist events.

Use Scenario: Solid-state replacement of mechanical relays for battery-fed 12 V loads such as HVAC actuators, lighting modules, and fuel pumps.

IC Role / Device Role / Timing Role: Single-pole, high-current power switch with fast turn-on/turn-off (td(on) = 38 ns, tf = 90 ns) for precise load timing and reduced arcing.

Use Value: 75 A continuous current and 1.5 J avalanche energy eliminate need for external snubbers or relay flyback protection in inductive load switching.

Motor & Solenoid Drive Thermally Managed Power Distribution

Use Scenario: Driving 12 V DC motors (e.g., seat adjusters, window lifts) and high-force solenoids (e.g., transmission shift actuators) in OEM modules.

IC Role / Device Role / Timing Role: Main power switch with integrated thermal feedback loop; gate driven by microcontroller GPIO or dedicated driver IC.

Use Value: On-chip temperature diode provides direct junction readout, allowing dynamic current limiting before reaching 175 °C Tj limit-improving functional safety compliance.

Use Scenario: Centralized power distribution unit (PDU) managing multiple 12 V subsystems with real-time thermal monitoring and fault logging.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch with traceable thermal signature for predictive maintenance and diagnostics.

Use Value: 0.55 K/W Rth(j-mb) and calibrated VF(TSD) enable accurate thermal modeling across production units, supporting ISO 26262 ASIL-B system-level analysis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power FET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 220 A (Tmb = 25 °C), RDS(on) = 1.7 mΩ; no integrated temperature diode; PowerFLAT 5x6 package. Lacks on-die thermal sensing; requires external sensor for junction monitoring; higher peak current but lower thermal density per mm². Select when maximum current density and minimal footprint are prioritized over embedded thermal diagnostics.
ON Semiconductor NTMFS4C09NT1G 40 V, 100 A (Tmb = 100 °C), RDS(on) = 2.9 mΩ; no temperature diode; SO-8FL package with exposed drain pad. Lower RDS(on) but smaller thermal mass; no integrated sensing; limited to ≤150 °C Tj rating. Choose for cost-sensitive, non-safety-critical 12 V switching where thermal monitoring is handled externally.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK714R1-40BT,118 uniquely combines AEC-Q101 qualification, 175 °C operation, and factory-calibrated temperature sensing in a D2PAK package-making it the only option among the three that satisfies ASIL-B thermal monitoring requirements without added components.

Availability

BUK714R1-40BT,118 is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), 12 V automotive load switching, and motor/solenoid drive applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK714R1-40BT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

BUK714R1-40BT,118 belongs to NXP's TrenchPLUS automotive power MOSFET product line, engineered specifically for high-reliability, thermally constrained 12 V vehicle systems requiring integrated diagnostics and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current for BUK714R1-40BT,118 at 100 °C mounting base temperature?

The maximum continuous drain current is 75 A at Tmb = 100 °C, as specified in Table 1 (Quick reference data) and confirmed in Figure 2 of the datasheet. This value is package-limited-not silicon-limited-and remains constant up to Tmb = 100 °C before thermal derating begins.

How is the integrated temperature-sense diode used in practice?

The diode (anode = Pin 2, cathode = Pin 4) is biased with a constant 1 mA current source; its forward voltage (VF) is measured differentially across Pins 2 and 4. Using the known temperature coefficient (−2.83 mV/K), junction temperature is calculated as Tj = 25 °C + (1.60 V − VF)/0.00283, enabling real-time thermal feedback without external sensors.

Is BUK714R1-40BT,118 suitable for high-frequency PWM motor control?

Yes-it supports PWM frequencies up to 20 kHz with low switching losses: total gate charge is 83 nC, turn-off delay is 141 ns, and output capacitance (Coss) is 1389–1667 pF. Its low internal inductance (LD = 2.5 nH from mounting base) minimizes voltage overshoot during hard switching in brushed DC motor H-bridge configurations.

Does BUK714R1-40BT,118 require a gate resistor for automotive EMI compliance?

A gate resistor of 10 Ω is recommended per Figure 14 characterization conditions and is sufficient to meet CISPR 25 Class 5 radiated emissions limits in typical 12 V motor drive layouts. The device's controlled dV/dt (via QGD/QGS ratio of ~1.6) and low Crss (527–721 pF) inherently suppress high-frequency ringing without requiring complex RC snubbing networks.

BUK714R1-40BT,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchPLUS
Package/Case:
TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
83 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6808 pF @ 25 V
FET Feature:
Temperature Sensing Diode
Power Dissipation (Max):
272W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK714R1-40BT,118 FAQ

1.How can I place an order for BUK714R1-40BT,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK714R1-40BT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK714R1-40BT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK714R1-40BT,118 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK714R1-40BT,118?

For technical support, including BUK714R1-40BT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK714R1-40BT,118 requirements.

6.How does Aetrix verify that BUK714R1-40BT,118 is sourced from the original manufacturer or authorized distributors?

All BUK714R1-40BT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK714R1-40BT,118 meets industry standards.

7.What is the process for return or replacement of BUK714R1-40BT,118?

All BUK714R1-40BT,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK714R1-40BT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK714R1-40BT,118 part is unused and in its original packaging.

Return procedure for BUK714R1-40BT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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