Nexperia USA Inc. BUK7207-30B,118
- Part No.:
- BUK7207-30B,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
BUK7207-30B,118.pdf
- Description:
- MOSFET N-CH 30V 75A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,040
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Product details
Overview
BUK7207-30B,118 from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in DPAK (SOT428) package, designed for automotive-critical 12 V load switching. It delivers 75 A continuous drain current at Tmb = 25 °C, 30 V VDS rating, and 5.9 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, enabling low conduction loss in thermally demanding environments up to 185 °C junction temperature.
For engineers reviewing the BUK7207-30B,118 datasheet, BUK7207-30B,118 pinout, BUK7207-30B,118 application, or BUK7207-30B,118 equivalent, key selection criteria include automotive-grade avalanche ruggedness (329 mJ), thermal resistance to mounting base (0.95 K/W), gate-drive compatibility with standard 10 V logic, and package-level current derating behavior per Figure 1 and Figure 2.
Technical Context
This device implements a trench-gate vertical DMOS structure optimized for low RDS(on) and high avalanche energy handling. Its gate threshold voltage (VGS(th)) ranges from 0.9 V at 185 °C to 4.4 V at −55 °C, ensuring robust turn-on margin across automotive temperature extremes while maintaining sub-1 V turn-on capability at maximum junction temperature.
Dynamic performance is characterized by 34 nC total gate charge, 10 nC gate-drain charge, and 1684 pF input capacitance at VDS = 25 V, supporting fast switching in motor drive and solenoid control where dI/dt and EMI constraints require controlled transition times and low Crss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - Package-limited current capacity; derates to 0 A at Tmb ≈ 150 °C per Figure 1. |
| RDS(on) | 5.9 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.5 W conduction loss at 50 A, critical for thermal management in sealed modules. |
| EAS | 329 mJ - Non-repetitive unclamped avalanche energy at ID = 75 A, Vsup ≤ 30 V, supporting inductive load turn-off without external snubbers. |
| Rth(j-mb) | 0.95 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink attachment for high-power density PCB layouts. |
| VGS(th) | 2–4 V @ Tj = 25 °C; 0.9 V min @ Tj = 185 °C - Ensures reliable turn-on with standard 5 V/10 V microcontroller outputs across full automotive temperature range. |
Pinout & Package
Package: SOT428 (DPAK), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤20 V absolute max; 10 V nominal drive for full enhancement; gate charge QG(tot) = 34 nC. |
| 2 (D) | Drain | High-side switching node; internally connected to mounting base; carries full load current and dissipates conduction + switching losses. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side configuration; source inductance LS = 7.5 nH affects switching ringing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| 185 °C maximum junction temperature | Enables operation in under-hood environments without derating for ambient temperature, reducing need for active cooling. |
| Low RDS(on) × QG figure of merit | 5.9 mΩ × 34 nC = 200.6 mΩ·nC - Balances conduction efficiency and switching speed for 10–100 kHz PWM motor control. |
| Integrated source-drain diode | VSD = 0.85 V @ IS = 20 A, Tj = 25 °C; trr = 43 ns - Supports freewheeling in H-bridge and relay driving without external diode. |
Applications
| Automotive Body Control Module (BCM) | 12 V DC Motor Drive |
|---|---|
Use Scenario: Switching interior lighting, window lifters, and seat adjusters in passenger vehicles. IC Role / Device Role / Timing Role: Low-side power switch controlling resistive and inductive loads up to 75 A peak. Use Value: AEC-Q101 compliance ensures long-term reliability in vibration-prone chassis locations; 185 °C rating avoids thermal shutdown during summer cabin temperatures. |
Use Scenario: Driving brushed DC motors in HVAC blowers, radiator fans, and power steering assist pumps. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch with integrated body diode for freewheeling. Use Value: 329 mJ avalanche energy handles inductive kickback without snubber circuits; 75 A continuous rating supports >800 W motor output at 12 V. |
| Automotive Solenoid Control | Truck/Bus 12 V Load Distribution |
Use Scenario: Energizing fuel injectors, transmission shift solenoids, and ABS valve actuators. IC Role / Device Role / Timing Role: Fast-switching power switch with 14 ns turn-on delay and 85 ns rise time for precise pulse-width modulation. Use Value: Low QGD (10 nC) minimizes Miller-induced shoot-through risk in multi-phase solenoid drivers; 5.9 mΩ RDS(on) reduces coil heating during dwell time. |
Use Scenario: Centralized power distribution units managing auxiliary loads (refrigeration, PTO, trailer lighting) in commercial vehicles. IC Role / Device Role / Timing Role: High-reliability main power switch with fault-tolerant thermal design and mounting-base thermal interface. Use Value: 0.95 K/W Rth(j-mb) allows direct bolt-down to aluminum chassis for passive cooling; 167 W Ptot supports sustained 60 A loads at 12 V with minimal heatsink volume. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A rated, TO-263 package; RDS(on) = 1.8 mΩ @ 10 V but requires higher gate drive current (QG = 105 nC). | Higher current capacity suits larger motors but demands more complex gate driver and PCB layout due to larger footprint and parasitic inductance. | Select when >100 A continuous current or lower RDS(on) is required; verify gate driver slew rate and layout for 105 nC charge. |
| IRF3205PBF | 55 V, 110 A, TO-220 package; RDS(on) = 8.0 mΩ @ 10 V; not AEC-Q101 qualified; Tj(max) = 175 °C. | Lacks automotive qualification and has higher on-resistance; suitable only for non-safety-critical industrial 12 V systems. | Use only in cost-sensitive non-automotive designs where AEC-Q101 is not mandated; avoid in BCM or powertrain applications. |
Compared with STL220N3LLH6 and IRF3205PBF, BUK7207-30B,118 provides optimal balance of automotive qualification, thermal robustness (185 °C), and DPAK package integration-making it preferred for space-constrained, thermally aggressive automotive modules where qualification and reliability outweigh raw current rating.
Availability
BUK7207-30B,118 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC motor drives, and solenoid control systems requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for BUK7207-30B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.
BUK7207-30B,118 belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust 12 V load switching in harsh automotive environments where AEC-Q101 compliance, thermal resilience, and avalanche ruggedness are mandatory.
FAQ
Is BUK7207-30B,118 suitable for high-frequency PWM motor control?
Yes, with verified 14 ns turn-on delay, 85 ns rise time, and 10 nC gate-drain charge, it supports PWM frequencies up to 100 kHz in brushed DC motor drives. However, switching losses increase above 50 kHz due to QG = 34 nC and Ciss = 1684 pF; thermal design must account for combined conduction and switching dissipation per Figure 2.
What is the maximum safe operating current at 100 °C mounting base temperature?
Per Figure 1, normalized continuous drain current drops to ~60% at Tmb = 100 °C, yielding ~45 A (0.6 × 75 A). This limit is package-constrained-not silicon-limited-and assumes adequate PCB copper area for heat spreading per DPAK thermal guidelines in the datasheet.
Does the mounting base require electrical isolation from the heatsink?
No-the mounting base is internally connected to the drain (pin 2), so direct metal-to-metal contact with a grounded heatsink creates a short circuit. An electrically insulating thermal pad or mica washer rated for ≥30 V isolation and ≤1.5 K·cm²/W thermal resistance must be used when mounting to conductive surfaces.
Can BUK7207-30B,118 replace older BUK7207-30A variants in existing designs?
Yes-BUK7207-30B,118 is a direct replacement with identical pinout, package, and electrical specifications; the "B" suffix denotes updated wafer process and qualification revision (Rev. 3, 2011), with no functional or mechanical changes versus Rev. 2 "A" version.
BUK7207-30B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2245 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 167W (Tc)
- Operating Temperature:
- -55°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
BUK7207-30B,118 FAQ
1.How can I place an order for BUK7207-30B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7207-30B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BUK7207-30B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7207-30B,118 is usually 5 days.
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6.How does Aetrix verify that BUK7207-30B,118 is sourced from the original manufacturer or authorized distributors?
All BUK7207-30B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7207-30B,118 meets industry standards.
7.What is the process for return or replacement of BUK7207-30B,118?
All BUK7207-30B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7207-30B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7207-30B,118 part is unused and in its original packaging.
Return procedure for BUK7207-30B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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