Nexperia USA Inc. BUK7212-55B,118

Overview

BUK7212-55B,118 from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in DPAK (SOT428) package, designed for automotive-critical 12 V/24 V load switching. It delivers 75 A continuous drain current at T_mb = 25 °C, 10.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and operates up to 185 °C junction temperature - enabling robust thermal performance in engine bay and body control modules.

For engineers reviewing the BUK7212-55B,118 datasheet, BUK7212-55B,118 pinout, BUK7212-55B,118 application, or BUK7212-55B,118 equivalent, key selection criteria include its 55 V V_DS, low gate charge (Q_G(tot) = 35 nC), avalanche ruggedness (173 mJ), and mounting-base thermal resistance of 0.95 K/W - all critical for high-reliability automotive power switching designs.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-state resistance while maintaining stable threshold voltage across temperature (V_GS(th) = 0.9–4.4 V, T_j = −55 to +185 °C). Its gate drive compatibility with standard 10 V logic ensures seamless integration with common microcontroller GPIOs and dedicated gate drivers without level-shifting.

The device features a thermally optimized DPAK package with the mounting base electrically connected to the drain, enabling direct heatsinking and supporting high-power pulse operation (I_DM = 335 A, t_p ≤ 10 µs). Its unclamped inductive switching capability and 173 mJ non-repetitive avalanche energy provide inherent robustness against load dump and inductive kickback in motor and solenoid control.

Key Specifications

Pinout & Package

Package: DPAK (SOT428), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base electrically connected to drain for low-inductance, high-current thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK7212-55B,118 uniquely combines 55 V rating, AEC-Q101 qualification, DPAK thermal performance, and 185 °C operation - making it the only viable choice for production-grade 24 V automotive load switching where reliability and thermal margin are non-negotiable.

Availability

BUK7212-55B,118 is available at Aetrix Electronics and suitable for automotive body control modules, engine management subsystems, and 24 V commercial vehicle power distribution requiring stable component supply and long-term lifecycle support.

Supply support for BUK7212-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for automotive, industrial, and consumer applications.

The BUK7212-55B belongs to Nexperia's Automotive Qualified TrenchMOS portfolio, engineered specifically for robust, thermally efficient power switching in harsh automotive environments - emphasizing AEC-Q101 compliance, extended temperature operation, and proven avalanche ruggedness.

FAQ

Is BUK7212-55B,118 suitable for high-side switching configurations?

Yes - its 55 V V_DS rating and gate threshold voltage (0.9–4.4 V) support high-side operation with appropriate gate driver biasing (e.g., bootstrap or charge-pump circuit). The drain-connected mounting base simplifies heatsinking in high-side layouts, though layout must minimize source inductance to avoid false turn-on during fast dV/dt events.

What is the maximum allowable PCB copper area for thermal performance?

For optimal thermal performance, Nexperia recommends ≥2000 mm² of 2 oz copper on the mounting base pad, connected via ≥6 thermal vias (0.3 mm diameter, filled) to inner-layer ground planes. This achieves near-datasheet R_th(j-mb) = 0.95 K/W; reducing copper area increases junction temperature proportionally - e.g., 1000 mm² raises R_th to ~1.4 K/W.

Does BUK7212-55B,118 require external gate resistors for EMI control?

Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing caused by L_S (75 nH) and L_D (2.5 nH) interacting with C_iss (1840–2453 pF). Without it, fast switching edges (t_r/t_f < 100 ns) may generate >150 MHz emissions exceeding CISPR 25 Class 5 limits in automotive harnesses.

How does R_DS(on) change over temperature, and what impact does it have on thermal design?

R_DS(on) increases to 25 mΩ at T_j = 185 °C (2.5× room-temperature value), raising conduction loss quadratically with current. Thermal design must ensure steady-state T_j stays below 150 °C under worst-case load to limit R_DS(on) drift and prevent thermal runaway - especially critical in sealed enclosures with limited airflow.