Nexperia USA Inc. BUK724R5-30C,118
- Part No.:
- BUK724R5-30C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
BUK724R5-30C,118.pdf
- Description:
- MOSFET N-CH 30V 75A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,804
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Product details
Overview
BUK724R5-30C from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in DPAK (SOT428) package, designed for automotive 12V power switching. It delivers 75 A continuous drain current at Tmb = 100 °C, 30 V VDS, and 3.8 mΩ RDS(on) @ 10 VGS/25 A/25 °C, with avalanche energy rating of 329 mJ - enabling robust motor, lamp, and solenoid load control in engine bay environments up to 175 °C junction temperature.
For engineers reviewing the BUK724R5-30C datasheet, BUK724R5-30C pinout, BUK724R5-30C application, or BUK724R5-30C equivalent, this device is selected for high-reliability 12V automotive PWM power stages where standard-level gate drive (10 V), thermal resilience, and unclamped avalanche ruggedness are critical design requirements.
Technical Context
This MOSFET employs Nexperia's TrenchMOS technology to achieve low on-resistance and fast switching with controlled QG (62 nC) and QGD (21 nC). Its gate threshold voltage (2–4 V @ 25 °C) ensures reliable turn-on with standard 10 V logic drivers while maintaining safe margin against spurious conduction at elevated temperatures.
The device integrates a monolithic source-drain diode with 0.85 V forward drop @ 20 A and 40 ns reverse recovery time, supporting freewheeling in inductive loads. Thermal resistance from junction to mounting base is 0.65 K/W typical, enabling high-power dissipation when soldered to a thermally optimized PCB copper plane.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports full 12V automotive battery transient range including load dump spikes up to 30 V. |
| RDS(on) | 3.8 mΩ typical @ VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements. |
| ID (cont) | 75 A @ Tmb = 100 °C - defines usable continuous current under real-world board-mount thermal conditions. |
| EAS | 329 mJ non-repetitive avalanche energy - allows safe operation during inductive turn-off transients without external snubbers. |
| Rth(j-mb) | 0.65 K/W typical junction-to-mounting-base thermal resistance - confirms direct thermal path to PCB copper, critical for automotive under-hood reliability. |
| QGD | 21 nC gate-drain charge - determines Miller plateau duration and influences switching loss and dV/dt immunity in hard-switched PWM. |
| VGS(th) | 2–4 V @ Tj = 25 °C - ensures clean turn-on with 5 V or 10 V gate drivers while retaining noise margin at high temperature. |
Pinout & Package
Package: SOT428 (DPAK), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; threshold 2–4 V enables compatibility with standard microcontroller GPIOs. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base - must be connected to PCB copper pour for thermal management. |
| 3 (S) | Source | Power return path and reference for gate drive; low-inductance layout essential to minimize switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability across -55 °C to +175 °C, including temperature cycling, humidity, and mechanical shock testing. |
| Avalanche rugged | Rated for 329 mJ unclamped inductive energy - eliminates need for external clamping diodes in solenoid/motor driver designs. |
| Standard-level gate drive | Optimized for 10 V gate drive; avoids requirement for charge pump or level-shifter circuits in 12 V systems. |
| 175 °C max junction temperature | Enables operation in high-ambient locations (e.g., near engine block) without derating beyond datasheet curves. |
| Low internal inductance | LD = 2.5 nH, LS = 7.5 nH - reduces voltage overshoot and ringing during fast switching transitions. |
Applications
| Engine Cooling Fan Control | Headlamp LED Driver Switch |
|---|---|
|
Use Scenario: PWM-controlled 12V DC brushless fan in engine compartment with ambient up to 125 °C. IC Role / Device Role / Timing Role: High-side power switch handling 40–60 A peak current, operating at 20 kHz PWM frequency. Use Value: 3.8 mΩ RDS(on) limits conduction loss to <1.5 W at 60 A; avalanche rating absorbs back-EMF during abrupt shutdown. |
Use Scenario: Constant-current switching regulator for adaptive front lighting system (AFS) LEDs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in buck converter, switching at 500 kHz. Use Value: 21 nC QGD and 62 nC QG(tot) enable efficient high-frequency operation; 0.65 K/W Rth(j-mb) sustains 120 °C case temperature. |
| Transmission Solenoid Actuator | Start-Stop System Battery Disconnect |
|
Use Scenario: 12V solenoid valve control in automatic transmission hydraulic module. IC Role / Device Role / Timing Role: Single-pole power switch driving inductive load with 100 ms on-time pulses. Use Value: 329 mJ EAS safely clamps 400 V inductive kickback; 175 °C rating accommodates sealed module thermal environment. |
Use Scenario: Main battery isolation switch in 12V start-stop architecture with frequent engagement cycles. IC Role / Device Role / Timing Role: High-current bidirectional blocking switch (source-drain diode used for reverse polarity protection). Use Value: 0.85 V VSD @ 20 A minimizes forward drop in diode mode; 75 A continuous rating supports 500 A cranking surge tolerance via pulse derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A rated, 1.8 mΩ RDS(on), PowerFLAT 5x6 package, higher current but larger footprint and no AEC-Q101 certification in base variant. | Targeted at higher-current industrial motor drives; lacks automotive qualification unless specified as STL220N3LLH6AK. | Select only if >100 A continuous current is required and AEC-Q101 is not mandated for the subsystem. |
| IRF1404ZLPbF | 40 V, 195 A, 3.8 mΩ RDS(on), TO-220AB package, non-automotive grade, 175 °C rating but no avalanche energy spec. | Used in cost-sensitive 12V/24V industrial power supplies; lacks automotive qualification and defined EAS. | Acceptable for non-automotive 12V systems where qualification and avalanche safety are secondary to cost and availability. |
Compared with STL220N3LLH6 and IRF1404ZLPbF, the BUK724R5-30C uniquely combines AEC-Q101 qualification, verified 329 mJ avalanche capability, and DPAK thermal performance - making it the only choice for production automotive power switches requiring both functional safety and thermal resilience in constrained layouts.
Availability
BUK724R5-30C is available at Aetrix Electronics and suitable for automotive engine control modules, body electronics power distribution units, and ADAS sensor power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BUK724R5-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive and industrial power efficiency.
The BUK724R5-30C belongs to Nexperia's TrenchMOS automotive portfolio, engineered specifically for demanding 12V power switching in engine bay and chassis applications where AEC-Q101 compliance and thermal robustness are mandatory.
FAQ
Is BUK724R5-30C suitable for high-frequency PWM above 100 kHz?
Yes - with QG(tot) = 62 nC and QGD = 21 nC, the device supports efficient switching up to 500 kHz in well-designed gate-drive circuits. Layout must minimize source inductance (LS = 7.5 nH) to prevent oscillation; recommended gate resistor is 5–10 Ω for 10 V drive.
What is the maximum allowable mounting base temperature for continuous 75 A operation?
The datasheet specifies 75 A continuous drain current at Tmb = 100 °C. Operation above this requires derating per Figure 1; at Tmb = 125 °C, continuous current drops to ~55 A. Junction temperature must remain ≤175 °C, enforced by Rth(j-mb) = 0.65 K/W typical.
Does the source-drain diode support bidirectional current in battery disconnect applications?
Yes - the integrated body diode has 0.85 V forward voltage at 20 A and 40 ns reverse recovery time, enabling use in reverse-polarity protection and regenerative braking paths. However, its 75 A continuous rating applies only in forward conduction; reverse blocking is limited to VDS = 30 V.
Can BUK724R5-30C replace older BUZ70-series MOSFETs in legacy automotive designs?
Yes - it shares identical DPAK (SOT428) footprint and pinout, offers lower RDS(on) (3.8 mΩ vs. ~5.5 mΩ), improved avalanche rating (329 mJ vs. 220 mJ), and full AEC-Q101 qualification. Gate threshold remains compatible (2–4 V), allowing drop-in replacement with enhanced thermal and ruggedness margins.
BUK724R5-30C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
BUK724R5-30C,118 FAQ
1.How can I place an order for BUK724R5-30C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK724R5-30C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK724R5-30C,118 is sourced from the original manufacturer or authorized distributors?
All BUK724R5-30C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK724R5-30C,118 meets industry standards.
7.What is the process for return or replacement of BUK724R5-30C,118?
All BUK724R5-30C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK724R5-30C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK724R5-30C,118 part is unused and in its original packaging.
Return procedure for BUK724R5-30C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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