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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK7506-55B,127

Name: BUK7506-55B,127
Brand: NXP Semiconductors
SKU: BUK7506-55B,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK7506-55B,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK7506-55B,127.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

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Product details

Overview

BUK7506-55B from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in TO-220AB (SOT78A) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers 5.1 mΩ typical R_DS(on) at V_GS = 10 V and ID = 25 A, enabling low-conduction-loss switching in automotive 12 V/24 V load control.

For engineers reviewing the BUK7506-55B datasheet, BUK7506-55B pinout, BUK7506-55B application, or BUK7506-55B equivalent, key selection considerations include its standard-level gate drive compatibility (V_GS(th) = 2–4 V), avalanche ruggedness (680 mJ), thermal resistance (R_th(j-mb) = 0.59 K/W), and automotive qualification status.

Technical Context

This device uses TrenchMOS technology to achieve low R_DS(on) and high current capability in a thermally robust TO-220AB package with mounting base connected to drain. Its gate threshold voltage (V_GS(th)) ranges from 1 V at 175 °C to 4.4 V at −55 °C, supporting stable operation across automotive temperature extremes.

The MOSFET features unclamped inductive switching capability (EDS(AL)S = 680 mJ), fast switching dynamics (t_d(on) = 30 ns, t_f = 39 ns), and integrated source-drain diode with V_SD = 0.85 V at 25 A and T_j = 25 °C - critical for motor commutation and solenoid flyback handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V maximum drain-source voltage - defines safe blocking capability in 12 V/24 V automotive systems with transient overvoltage margin.
I_D (continuous)	75 A at T_mb = 25 °C - limited by package thermal capacity; supports high-current loads like starter relays or HVAC blowers.
R_DS(on)	5.1 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.3 W conduction loss at 50 A, reducing heatsink requirements.
T_j max	175 °C maximum junction temperature - allows operation in under-hood environments without derating below ambient 125 °C.
R_th(j-mb)	0.59 K/W - low thermal resistance from die to mounting base enables efficient heat transfer to external heatsinks.
EDS(AL)S	680 mJ non-repetitive avalanche energy - sustains unclamped inductive turn-off events in motor/solenoid drivers without failure.
V_GS(th)	2–4 V typical at T_j = 25 °C - compatible with standard 5 V or 12 V logic-level gate drivers without level-shifting circuitry.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base (drain-connected), 3-lead configuration, and 1 mounting hole. Mounting base serves as primary thermal path and electrical connection to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤20 V gate-source voltage; total gate charge Q_G(tot) = 64 nC dictates driver strength requirements.
2 (D) / mb	Drain + Mounting Base	Main high-side current path and primary thermal interface; electrically tied to mounting base for direct heatsink coupling.
3 (S)	Source	Power return node; internal source inductance L_S = 7.5 nH affects high-speed switching behavior and layout sensitivity.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
175 °C junction rating	Enables reliable operation in high-ambient under-hood locations without thermal shutdown or parameter drift.
Standard-level gate drive	Operates fully enhanced with 10 V gate drive - eliminates need for gate boosters in 12 V system designs.
Low R_DS(on) × Q_G figure of merit	Q_G/R_DS(on) ≈ 12.5 nC/mΩ - balances switching loss and conduction loss for high-efficiency PWM control.
Integrated source-drain diode	V_SD = 0.85 V at 25 A enables self-commutated freewheeling in H-bridge motor drives without external diodes.

Applications

Automotive Load Switching	Engine Control Actuators
Use Scenario: High-side switching of 12 V lighting, HVAC fans, and seat heaters in modern vehicle architectures. IC Role / Device Role / Timing Role: Power MOSFET acting as main current path switch controlled by microcontroller GPIO or dedicated driver IC. Use Value: Low R_DS(on) minimizes power loss and thermal stress during continuous duty; AEC-Q101 ensures long-term reliability in vibration-prone environments.	Use Scenario: Driving fuel injectors, idle air control valves, and EGR solenoids requiring precise pulse-width modulated current control. IC Role / Device Role / Timing Role: Low-inductance power switch managing inductive load current with fast turn-on/turn-off timing (t_d(on) = 30 ns, t_f = 39 ns). Use Value: Avalanche ruggedness (680 mJ) safely absorbs flyback energy during rapid current interruption without snubber circuits.
Industrial Motor Control	12 V/24 V DC Power Distribution
Use Scenario: Single-phase BLDC or brushed DC motor drives in pumps, compressors, and power tools. IC Role / Device Role / Timing Role: Half-bridge high-side switch synchronized with complementary low-side FET using gate driver with matched propagation delay. Use Value: Fast reverse recovery (t_rr = 73 ns) and low Q_r (82 nC) reduce shoot-through risk and switching losses during commutation.	Use Scenario: Centralized power distribution units (PDUs) managing multiple 12 V/24 V subsystems with overcurrent and thermal protection. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, providing programmable on/off control and diagnostics via microcontroller interface. Use Value: 145 A peak drain current (I_DM) supports high inrush currents during cold-start conditions without latch-up or degradation.

Automotive Load Switching

Engine Control Actuators

Use Scenario: High-side switching of 12 V lighting, HVAC fans, and seat heaters in modern vehicle architectures.

IC Role / Device Role / Timing Role: Power MOSFET acting as main current path switch controlled by microcontroller GPIO or dedicated driver IC.

Use Value: Low R_DS(on) minimizes power loss and thermal stress during continuous duty; AEC-Q101 ensures long-term reliability in vibration-prone environments.

Use Scenario: Driving fuel injectors, idle air control valves, and EGR solenoids requiring precise pulse-width modulated current control.

IC Role / Device Role / Timing Role: Low-inductance power switch managing inductive load current with fast turn-on/turn-off timing (t_d(on) = 30 ns, t_f = 39 ns).

Use Value: Avalanche ruggedness (680 mJ) safely absorbs flyback energy during rapid current interruption without snubber circuits.

Industrial Motor Control

12 V/24 V DC Power Distribution

Use Scenario: Single-phase BLDC or brushed DC motor drives in pumps, compressors, and power tools.

IC Role / Device Role / Timing Role: Half-bridge high-side switch synchronized with complementary low-side FET using gate driver with matched propagation delay.

Use Value: Fast reverse recovery (t_rr = 73 ns) and low Q_r (82 nC) reduce shoot-through risk and switching losses during commutation.

Use Scenario: Centralized power distribution units (PDUs) managing multiple 12 V/24 V subsystems with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, providing programmable on/off control and diagnostics via microcontroller interface.

Use Value: 145 A peak drain current (I_DM) supports high inrush currents during cold-start conditions without latch-up or degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DS, 75 A I_D, R_DS(on) = 8.5 mΩ @ 10 V - higher conduction loss than BUK7506-55B's 5.1 mΩ.	Less suitable for thermally constrained 12 V automotive modules where <1.5 W loss is required at 50 A.	Select when cost sensitivity outweighs thermal performance; verify gate drive compatibility with V_GS(th) = 2–4 V range.
IRFZ44NPBF	55 V V_DS, 49 A I_D, R_DS(on) = 28 mΩ @ 10 V - significantly higher on-resistance and lower current rating.	Not qualified to AEC-Q101; unsuitable for automotive safety-critical functions per ISO 26262 requirements.	Acceptable only for non-automotive industrial or consumer applications with relaxed reliability and temperature requirements.

Compared with STP75NF55 and IRFZ44NPBF, the BUK7506-55B offers superior thermal performance (0.59 K/W vs ≥1.0 K/W), tighter R_DS(on) tolerance, and formal automotive qualification - making it the preferred choice for space- and efficiency-constrained 12 V/24 V power switching where long-term field reliability is mandatory.

Availability

BUK7506-55B is available at Aetrix Electronics and suitable for automotive load switching, engine control actuators, and industrial motor control requiring stable component supply across extended temperature ranges and high-reliability production cycles.

Supply support for BUK7506-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK7506-55B belongs to Nexperia's TrenchMOS standard-level power MOSFET family, engineered specifically for robust, high-current switching in automotive-grade 12 V and 24 V systems with demanding thermal and reliability requirements.

FAQ

What is the maximum continuous drain current rating for BUK7506-55B?

The BUK7506-55B has a maximum continuous drain current of 75 A at mounting base temperature T_mb = 25 °C, limited by package thermal capacity. At T_mb = 100 °C, this rating drops to 75 A due to thermal derating curves shown in Figure 1 of the datasheet. Peak drain current reaches 582 A for pulses ≤10 µs.

Is BUK7506-55B qualified for automotive applications?

Yes, the BUK7506-55B is AEC-Q101 qualified and designed and tested to meet automotive reliability standards. It is explicitly intended for use in automotive critical applications, including engine management, body electronics, and ADAS subsystems, with full qualification across −55 °C to +175 °C operating temperature range.

What is the gate-source threshold voltage range for BUK7506-55B?

The BUK7506-55B exhibits a gate-source threshold voltage (V_GS(th)) of 2–4 V at T_j = 25 °C, 1–3 V at T_j = 175 °C, and up to 4.4 V at T_j = −55 °C. This standard-level threshold enables direct drive from 5 V or 12 V microcontrollers without gate boosting circuitry.

Does BUK7506-55B have avalanche capability, and how much energy can it withstand?

Yes, the BUK7506-55B is specified for non-repetitive drain-source avalanche energy (EDS(AL)S) of 680 mJ under test conditions of I_D = 75 A, V_sup ≤55 V, R_GS = 50 Ω, and V_GS = 10 V. This ruggedness supports reliable operation in inductive load switching such as motors and solenoids.

What package type does BUK7506-55B use, and how is thermal management implemented?

The BUK7506-55B uses the TO-220AB (SOT78A) package, where the mounting base is electrically connected to the drain and serves as the primary thermal interface. Its R_th(j-mb) is 0.59 K/W, enabling efficient heat transfer to external heatsinks - critical for maintaining junction temperature below 175 °C in high-power automotive applications.

BUK7506-55B,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 254W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK7506-55B,127 FAQ

1.How can I place an order for BUK7506-55B,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7506-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7506-55B,127 reliable?

The price and inventory of BUK7506-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7506-55B,127 is usually 5 days.

3.What payment methods are accepted for BUK7506-55B,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7506-55B,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7506-55B,127?

BUK7506-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7506-55B,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7506-55B,127?

For technical support, including BUK7506-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7506-55B,127 requirements.

6.How does Aetrix verify that BUK7506-55B,127 is sourced from the original manufacturer or authorized distributors?

All BUK7506-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7506-55B,127 meets industry standards.

7.What is the process for return or replacement of BUK7506-55B,127?

All BUK7506-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7506-55B,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7506-55B,127 part is unused and in its original packaging.

Return procedure for BUK7506-55B,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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