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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK7510-55AL,127

Name: BUK7510-55AL,127
Brand: NXP Semiconductors
SKU: BUK7510-55AL,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK7510-55AL,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK7510-55AL,127.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

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Product details

Overview

BUK7510-55AL from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 175 °C maximum junction temperature. It delivers 8.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and is AEC-Q101 qualified for automotive critical loads including 12 V/24 V motor control and clamped inductive switching.

For engineers reviewing the BUK7510-55AL datasheet, BUK7510-55AL pinout, BUK7510-55AL application, or BUK7510-55AL equivalent, key selection considerations include its 175 °C thermal rating, 1.1 J non-repetitive avalanche energy, stable linear-mode operation, gate-drain charge of 50 nC, and mounting-base thermal resistance of 0.25 K/W - all critical for high-reliability automotive power switching designs.

Technical Context

This discrete MOSFET employs TrenchMOS technology to achieve low on-resistance and robust avalanche ruggedness. Its gate threshold voltage ranges from 1 V (T_j = 175 °C) to 4.4 V (T_j = −55 °C), with typical V_GS(th) = 3 V at 25 °C, enabling reliable turn-on with standard 10 V gate drive. The device supports repetitive clamped inductive switching via inherent body diode recovery (t_rr = 73 ns, Q_r = 430 nC) and exhibits low internal inductances (L_D = 3.5 nH, L_S = 7.5 nH).

Thermal design is enabled by direct-mounting capability: the metal mounting base is internally connected to the drain, providing a low-impedance path to heatsink with R_th(j-mb) = 0.25 K/W (typ). Safe operating area (SOA) is defined up to 10 ms pulse width at 100 V, supporting transient load handling without external snubbers in DC motor commutation circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines system bus voltage compatibility with 12 V/24 V automotive architectures.
I_D (continuous)	75 A at T_mb = 25 °C - Continuous current capability limited by package thermal performance; derates to 0 A at T_mb ≈ 150 °C per Figure 1.
R_DS(on)	8.5 mΩ (typ) at V_GS = 10 V, T_j = 25 °C - Low conduction loss enables <1 W dissipation at 40 A, reducing heatsink requirements.
E_DS(AL)S	1.1 J (non-repetitive) - Avalanche energy rating supports unclamped inductive turn-off events in relay/motor driver applications without failure.
Q_GD	50 nC - Gate-drain charge determines Miller plateau duration and switching loss during hard-switching; enables predictable 132 ns t_d(off).
T_j max	175 °C - Junction temperature limit enabling operation in under-hood environments without derating penalties typical of 150 °C-rated devices.
V_GS(th)	2–4 V (25 °C), 1–4.4 V (−55 to 175 °C) - Wide threshold range ensures robust noise immunity and stable turn-on across full automotive temperature range.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal base (drain-connected), 3-lead configuration, 1 mounting hole. Dimensions: 15.2–16.0 mm length × 9.7–10.3 mm width × 4.1–4.7 mm height; mounting base thickness 1.25–1.40 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; gate leakage <100 nA ensures low standby current.
2 (D)	Drain	Main power output terminal; electrically tied to mounting base for direct heatsinking; internal drain inductance = 3.5 nH.
3 (S)	Source	Power return path; source inductance = 7.5 nH; body diode anode; used for current sensing in high-side configurations.
Mounting Base (mb)	Drain (integrated)	Electrically and thermally connected to drain pin; provides primary thermal path to heatsink; R_th(j-mb) = 0.25 K/W (typ).

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive safety-critical systems including engine control, braking, and ADAS power stages.
175 °C junction rating	Enables operation in high-ambient under-hood locations without thermal derating, extending lifetime in thermally demanding environments.
Stable linear-mode operation	Guaranteed safe operation in analog regulation (e.g., current limiting, soft-start) without thermal runaway due to positive temperature coefficient of R_DS(on).
Non-repetitive avalanche energy	1.1 J rating allows reliable handling of unclamped inductive spikes in motor drivers and solenoid controls without external protection.
Low gate-drain charge	50 nC Q_GD reduces Miller-induced switching losses and improves controllability during high-dV/dt transitions.

Applications

Automotive Load Switching	DC Motor Control
Use Scenario: High-side switching of 12 V/24 V solenoids, fuel pumps, and HVAC actuators in passenger vehicles. IC Role / Device Role / Timing Role: Power switch controlling load activation/deactivation; operates in saturated on/off states with fast 33 ns t_d(on) and 95 ns t_f. Use Value: AEC-Q101 compliance and 175 °C rating ensure reliability over 15-year vehicle lifecycle in harsh under-hood conditions.	Use Scenario: H-bridge or half-bridge driver for brushed DC motors in power seats, windows, and wipers. IC Role / Device Role / Timing Role: Low-side or high-side switching element; handles bidirectional current with body diode recovery t_rr = 73 ns. Use Value: 8.5 mΩ R_DS(on) minimizes conduction loss at 30–50 A, improving efficiency and reducing thermal stress on PCB layout.
Repetitive Clamped Inductive Switching	Thermally Demanding Power Regulation
Use Scenario: Driving inductive relays and contactors in battery management and chassis control modules. IC Role / Device Role / Timing Role: Power switch subjected to repeated V_DS overshoot during turn-off; relies on intrinsic avalanche ruggedness. Use Value: 1.1 J E_DS(AL)S rating eliminates need for external TVS/clamp diodes, simplifying BOM and board space.	Use Scenario: Linear-mode current regulation in pre-charge circuits or active load dumps. IC Role / Device Role / Timing Role: Analog-controlled power transistor operating in ohmic region; leverages stable R_DS(on) vs. T_j behavior. Use Value: Positive temperature coefficient of R_DS(on) prevents thermal runaway during sustained linear operation at elevated ambient temperatures.

Automotive Load Switching

DC Motor Control

Use Scenario: High-side switching of 12 V/24 V solenoids, fuel pumps, and HVAC actuators in passenger vehicles.

IC Role / Device Role / Timing Role: Power switch controlling load activation/deactivation; operates in saturated on/off states with fast 33 ns t_d(on) and 95 ns t_f.

Use Value: AEC-Q101 compliance and 175 °C rating ensure reliability over 15-year vehicle lifecycle in harsh under-hood conditions.

Use Scenario: H-bridge or half-bridge driver for brushed DC motors in power seats, windows, and wipers.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; handles bidirectional current with body diode recovery t_rr = 73 ns.

Use Value: 8.5 mΩ R_DS(on) minimizes conduction loss at 30–50 A, improving efficiency and reducing thermal stress on PCB layout.

Repetitive Clamped Inductive Switching

Thermally Demanding Power Regulation

Use Scenario: Driving inductive relays and contactors in battery management and chassis control modules.

IC Role / Device Role / Timing Role: Power switch subjected to repeated V_DS overshoot during turn-off; relies on intrinsic avalanche ruggedness.

Use Value: 1.1 J E_DS(AL)S rating eliminates need for external TVS/clamp diodes, simplifying BOM and board space.

Use Scenario: Linear-mode current regulation in pre-charge circuits or active load dumps.

IC Role / Device Role / Timing Role: Analog-controlled power transistor operating in ohmic region; leverages stable R_DS(on) vs. T_j behavior.

Use Value: Positive temperature coefficient of R_DS(on) prevents thermal runaway during sustained linear operation at elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DS, 75 A I_D, 10 mΩ R_DS(on) at 25 °C, TO-220 package, not AEC-Q101 qualified	Lacks automotive qualification; suitable for industrial/commercial motor drives but not safety-critical automotive use	Select BUK7510-55AL when AEC-Q101 compliance and 175 °C operation are mandatory.
IRF1404ZLPBF	40 V V_DS, 180 A I_D, 3.8 mΩ R_DS(on), TO-220, not AEC-Q101 qualified, lower voltage rating	Insufficient V_DS margin for 24 V automotive systems with load dump transients; higher current rating unnecessary for most 75 A applications	Choose BUK7510-55AL for 55 V blocking headroom and guaranteed automotive qualification in 12/24 V systems.

Compared with STP75NF55 and IRF1404ZLPBF, the BUK7510-55AL uniquely combines AEC-Q101 qualification, 55 V rating, 175 °C operation, and 8.5 mΩ on-resistance - making it the only drop-in solution for thermally constrained, safety-critical automotive power switching where reliability across temperature and lifetime is non-negotiable.

Availability

BUK7510-55AL is available at Aetrix Electronics and suitable for automotive load switching, DC motor control, repetitive clamped inductive switching, and thermally demanding power regulation requiring stable component supply across extended production lifecycles.

Supply support for BUK7510-55AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BUK7510-55AL belongs to NXP's TrenchMOS automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in safety-critical vehicle subsystems such as body electronics, powertrain interfaces, and ADAS actuators.

FAQ

What is the maximum continuous drain current rating for BUK7510-55AL?

The BUK7510-55AL has a maximum continuous drain current of 75 A at mounting base temperature (T_mb) = 25 °C, as specified in Table 1 and Table 4 of the datasheet. This rating is package-limited and decreases with rising T_mb, reaching zero at approximately 150 °C per Figure 1. At T_mb = 100 °C, the device still supports 75 A, confirming robust thermal design for forced-air or heatsink-cooled automotive applications. The BUK7510-55AL maintains this current capability while sustaining 175 °C junction temperature.

Is BUK7510-55AL suitable for linear-mode operation in automotive applications?

Yes, the BUK7510-55AL is explicitly designed for stable linear-mode operation, as stated in section 1.2 "Features and benefits". Its positive temperature coefficient of R_DS(on) prevents thermal runaway during analog regulation, and its 175 °C junction rating supports sustained operation in high-ambient environments. The datasheet confirms suitability for control systems requiring stable linear behavior - making BUK7510-55AL appropriate for automotive pre-charge, active load dump, and current-limiting circuits where MOSFETs operate partially enhanced.

What is the avalanche ruggedness specification for BUK7510-55AL?

The BUK7510-55AL is rated for 1.1 J of non-repetitive drain-source avalanche energy (E_DS(AL)S) under conditions of I_D = 75 A, V_sup ≤ 55 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C (unclamped). This specification, found in Table 1 and Table 4, enables reliable handling of inductive turn-off transients in motor and relay drivers without external protection. Repetitive avalanche energy is also supported but requires adherence to Figure 4 limits to maintain average junction temperature below 170 °C.

Does BUK7510-55AL have automotive qualification?

Yes, the BUK7510-55AL is AEC-Q101 qualified, as confirmed in section 1.2 "Features and benefits" and the General Description. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, including engine control, chassis systems, and body electronics. This qualification covers stress testing for temperature cycling, humidity, mechanical shock, and high-temperature operating life - ensuring long-term reliability in automotive environments where component failure is unacceptable.

What is the thermal resistance from junction to mounting base for BUK7510-55AL?

The thermal resistance from junction to mounting base (R_th(j-mb)) for BUK7510-55AL is 0.25 K/W (typical) and 0.5 K/W (maximum), per Table 5. This low value is achieved because the metal mounting base is internally connected to the drain, providing a direct thermal path to the heatsink. Engineers can use this parameter to calculate junction temperature rise (ΔT_j = P_diss × R_th(j-mb)) when designing cooling solutions - critical for maintaining the 175 °C T_j limit in high-power automotive applications. The BUK7510-55AL's R_th(j-mb) enables efficient heat extraction even at 300 W total power dissipation.

BUK7510-55AL,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK7510-55AL,127 FAQ

1.How can I place an order for BUK7510-55AL,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7510-55AL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7510-55AL,127 reliable?

The price and inventory of BUK7510-55AL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7510-55AL,127 is usually 5 days.

3.What payment methods are accepted for BUK7510-55AL,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7510-55AL,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7510-55AL,127?

BUK7510-55AL,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7510-55AL,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7510-55AL,127?

For technical support, including BUK7510-55AL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7510-55AL,127 requirements.

6.How does Aetrix verify that BUK7510-55AL,127 is sourced from the original manufacturer or authorized distributors?

All BUK7510-55AL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7510-55AL,127 meets industry standards.

7.What is the process for return or replacement of BUK7510-55AL,127?

All BUK7510-55AL,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7510-55AL,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7510-55AL,127 part is unused and in its original packaging.

Return procedure for BUK7510-55AL,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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