NXP Semiconductors BUK7514-55A,127
- Part No.:
- BUK7514-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK7514-55A,127.pdf
- Description:
- MOSFET N-CH 55V 73A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,240
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Product details
Overview
BUK7514-55A from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for automotive-critical power switching. It delivers 55 V drain-source voltage rating, 73 A continuous drain current at Tmb = 25 °C, and 12 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, enabling efficient high-current DC load control in engine management and body electronics.
For engineers reviewing the BUK7514-55A datasheet, BUK7514-55A pinout, BUK7514-55A application, or BUK7514-55A equivalent, key selection criteria include AEC-Q101 qualification, unclamped avalanche energy of 125 mJ, thermal resistance Rth(j-mb) = 0.9 K/W, gate threshold voltage range (1–4.4 V), and mounting-base temperature derating behavior.
Technical Context
This device uses TrenchMOS technology to achieve low on-state resistance while maintaining robustness for automotive environments. Its gate-source threshold voltage (VGS(th)) varies from 1 V at Tj = 175 °C to 4.4 V at Tj = −55 °C, supporting reliable turn-on across full junction temperature range. The integrated source-drain diode exhibits VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C.
Dynamic characteristics include Ciss = 1848–2464 pF, Coss = 421–506 pF, and fast switching with td(on) = 17–26 ns and tf = 51–71 ns under specified test conditions. Internal inductances are tightly controlled: LD = 3.5–4.5 nH (tab-to-die), LS = 7.5 nH (lead-to-bond pad), minimizing voltage overshoot during hard switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - supports 42 V nominal automotive battery systems with margin for load dump transients |
| ID (continuous) | 73 A at Tmb = 25 °C - enables high-power solenoid, fan, or heater control without external heatsink derating |
| RDS(on) | 12–14 mΩ typ at VGS = 10 V, ID = 25 A, Tj = 25 °C - limits conduction loss to ≤2.2 W at 30 A, reducing thermal stress |
| EDS(AL)S | 125 mJ unclamped avalanche energy - sustains single-pulse inductive kickback from 50 A loads without failure |
| Rth(j-mb) | 0.9 K/W - allows direct mounting to chassis or heatsink for efficient thermal transfer in space-constrained modules |
| VGS(th) | 2–4 V typ at Tj = 25 °C - ensures compatibility with 3.3 V and 5 V logic-level gate drivers without level shifting |
| QG | ~50 nC typical - determines gate drive power requirement and switching speed in PWM applications |
Pinout & Package
Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain; 3-lead configuration with 1 mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 0–20 V gate-source voltage; requires <100 nA leakage current handling |
| 2 (D) | Drain | Main power input; electrically tied to mounting base for low-inductance heat path and simplified PCB layout |
| 3 (S) | Source | Power return path; referenced to system ground; carries full load current with minimal parasitic inductance (LS = 7.5 nH) |
| Mounting base (mb) | Drain connection | Integral thermal and electrical path to heatsink; eliminates need for separate drain trace and reduces EMI loop area |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, braking, and ADAS subsystems |
| Low RDS(on) | 12 mΩ typ enables >98% efficiency at 30 A/12 V, reducing thermal design burden in sealed enclosures |
| High avalanche ruggedness | 125 mJ non-repetitive energy rating protects against inductive switching failures in relay replacement circuits |
| Thermal performance | 0.9 K/W junction-to-mounting-base resistance supports sustained operation at Tj = 175 °C with proper heatsinking |
| Wide VGS(th) range | 1–4.4 V over −55 to +175 °C ensures predictable turn-on behavior across automotive ambient extremes |
Applications
| Engine Control Module (ECM) | Body Control Module (BCM) |
|---|---|
Use Scenario: Switching fuel injector solenoids and ignition coil primary windings in 12 V/24 V gasoline/diesel engines. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inductive loads with precise PWM timing and fast fall time (tf ≤ 71 ns). Use Value: Avalanche energy rating prevents failure during coil flyback; low RDS(on) minimizes power loss in duty-cycle-intensive injection cycles. | Use Scenario: Driving HVAC blower motors, seat heaters, and door lock actuators in passenger compartments. IC Role / Device Role / Timing Role: Robust DC power switch interfacing directly with microcontroller GPIO or dedicated driver ICs. Use Value: AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime; mounting base connection simplifies thermal management in compact BCM housings. |
| Electric Power Steering (EPS) | Commercial Vehicle Lighting |
Use Scenario: Controlling assist motor phase currents and auxiliary hydraulic pump drives in steer-by-wire systems. IC Role / Device Role / Timing Role: High-current MOSFET in H-bridge or half-bridge configurations requiring fast switching and low conduction loss. Use Value: 73 A continuous rating supports peak assist torque demands; tight Ciss/Coss specs enable clean commutation at >20 kHz PWM frequencies. | Use Scenario: Managing LED headlamp arrays and trailer lighting loads in trucks and buses with 24 V nominal systems. IC Role / Device Role / Timing Role: Load switch protecting downstream circuitry from reverse polarity, overvoltage, and short-circuit faults. Use Value: 55 V VDS withstands 36 V load dump events; internal source-drain diode provides freewheeling path for inductive lamp ballasts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF55 | Higher RDS(on) (14 mΩ min), same 55 V rating, TO-220FP package with insulated tab | Non-AEC-Q101; suitable for industrial but not automotive safety-critical use | Select when insulation from heatsink is required and AEC qualification is unnecessary |
| IRFZ44NPBF | Lower voltage rating (55 V max), higher RDS(on) (17.5 mΩ typ), no avalanche rating specified | Not qualified for automotive; limited thermal robustness (Rth(j-mb) not specified) | Consider only for cost-sensitive non-automotive applications where transient immunity is secondary |
Compared with STP75NF55 and IRFZ44NPBF, the BUK7514-55A offers verified AEC-Q101 qualification, superior avalanche ruggedness (125 mJ), and lower RDS(on), making it the preferred choice for automotive power switching where reliability under harsh transients is mandatory.
Availability
BUK7514-55A is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and commercial vehicle power distribution requiring stable component supply across long production lifecycles.
Supply support for BUK7514-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK7514-55A belongs to NXP's TrenchMOS standard-level power MOSFET product line, engineered specifically for high-reliability automotive power switching applications demanding AEC-Q101 compliance and robust avalanche performance.
FAQ
What is the maximum junction temperature rating for the BUK7514-55A?
The BUK7514-55A has a maximum junction temperature (Tj) of 175 °C, validated per AEC-Q101 stress testing. This rating enables operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains Tj ≤ 175 °C using the specified Rth(j-mb) = 0.9 K/W path to the mounting base. Derating curves in the datasheet show continuous current reduction above Tmb = 25 °C.
Is the BUK7514-55A pin-compatible with other TO-220AB N-channel MOSFETs?
The BUK7514-55A uses standard TO-220AB (SOT78A) pinout: Pin 1 = Gate, Pin 2 = Drain (connected to mounting base), Pin 3 = Source. While physical footprint and lead spacing match industry-standard TO-220AB, electrical compatibility depends on RDS(on), VGS(th), and avalanche rating - the BUK7514-55A is not a drop-in replacement for non-AEC-Q101 or non-avalanche-rated variants without circuit validation.
Does the BUK7514-55A have an integrated body diode, and what are its characteristics?
Yes, the BUK7514-55A includes an inherent source-drain body diode. At IS = 25 A and Tj = 25 °C, forward voltage (VSD) is 0.85–1.2 V; at IS = 73 A, it rises to 1.1 V. Reverse recovery time (trr) is 54 ns with Qr = 0.12 µC under specified test conditions (IS = 73 A, dIS/dt = −100 A/µs), supporting moderate-frequency freewheeling in inductive load circuits.
What gate drive voltage is required to fully enhance the BUK7514-55A?
The BUK7514-55A achieves its specified RDS(on) of 12–14 mΩ at VGS = 10 V. Gate threshold voltage (VGS(th)) ranges from 2–4 V at Tj = 25 °C, meaning it begins conducting significantly above ~3 V. For reliable saturation and minimal conduction loss across temperature, a minimum VGS of 10 V is recommended; operation at 5 V yields higher RDS(on) and increased power dissipation.
How does the mounting base connection affect PCB layout for the BUK7514-55A?
The mounting base (tab) of the BUK7514-55A is internally connected to the drain terminal, so PCB copper pour or heatsink interface must be electrically isolated from source and gate traces. This eliminates need for a separate drain trace but requires careful isolation of the heatsink from other potentials. Thermal vias under the tab and direct screw-mounting to chassis improve heat transfer, while minimizing loop area between drain and source reduces EMI in high-di/dt switching.
BUK7514-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2464 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK7514-55A,127 FAQ
1.How can I place an order for BUK7514-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7514-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7514-55A,127 reliable?
The price and inventory of BUK7514-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7514-55A,127 is usually 5 days.
3.What payment methods are accepted for BUK7514-55A,127?
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4.How is shipping managed for BUK7514-55A,127?
BUK7514-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7514-55A,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7514-55A,127?
For technical support, including BUK7514-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7514-55A,127 requirements.
6.How does Aetrix verify that BUK7514-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK7514-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7514-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK7514-55A,127?
All BUK7514-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7514-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7514-55A,127 part is unused and in its original packaging.
Return procedure for BUK7514-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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