NXP Semiconductors BUK7514-60E,127

Overview

BUK7514-60E from Nexperia is an AEC Q101-qualified N-channel TrenchMOS standard-level power MOSFET in TO-220AB (SOT78A) package, designed for high-reliability automotive switching. It delivers 58 A continuous drain current at 25 °C mounting base temperature, 60 V drain-source voltage rating, and 9.6 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C - enabling efficient 12 V system motor and solenoid control.

For engineers reviewing the BUK7514-60E datasheet, BUK7514-60E pinout, BUK7514-60E application, or BUK7514-60E equivalent, key selection considerations include its 175 °C junction rating, repetitive avalanche capability, true standard-level gate threshold (>1 V at 175 °C), and thermal resistance of 1.56 K/W from junction to mounting base.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 6.9 nC and t_f = 9.8 ns under specified test conditions. Its gate threshold voltage remains functional across -55 °C to 175 °C, with V_GS(th) ≥ 1 V at maximum junction temperature.

The device integrates a robust source-drain diode (V_SD = 0.84 V at 20 A, T_j = 25 °C) and supports unclamped single-pulse avalanche energy up to 37 mJ. Thermal design is enabled by direct die-to-mounting-base conduction (R_th(j-mb) = 1.56 K/W) and compatibility with heatsink mounting per TO-220AB mechanical outline.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78A) - plastic single-ended package with heatsink-mounted mounting base (pin 2/mb connected to drain), 3 leads, and 1 mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP55NF06L and IRFZ44NPBF, the BUK7514-60E provides superior thermal capability (175 °C vs. 150 °C), lower R_DS(on), certified avalanche ruggedness, and formal AEC Q101 qualification - making it the only option qualified for safety-critical automotive power switching.

Availability

BUK7514-60E is available at Aetrix Electronics and suitable for automotive power distribution, transmission control, and start-stop micro-hybrid systems requiring stable component supply and long-term lifecycle assurance.

Supply support for BUK7514-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BUK7514-60E belongs to Nexperia's TrenchMOS automotive-qualified PowerMOS family, engineered specifically for thermally demanding 12 V vehicle subsystems requiring AEC Q101 compliance and robust avalanche performance.

FAQ

What is the maximum continuous drain current for BUK7514-60E at 100 °C mounting base temperature?

The BUK7514-60E supports 41 A continuous drain current at T_mb = 100 °C, as specified in Table 4 (Limiting values). This derating reflects thermal constraints of the TO-220AB package and ensures safe operation within its 175 °C junction limit. The BUK7514-60E maintains this rating without requiring active cooling in many under-hood applications.

Does BUK7514-60E have a built-in body diode, and what are its key parameters?

Yes, the BUK7514-60E integrates a source-drain body diode with forward voltage V_SD = 0.84 V typical at I_S = 20 A and T_j = 25 °C (Table 6). Its reverse recovery time is 21.3 ns and recovered charge Q_r = 18.1 nC under specified conditions, supporting efficient freewheeling in inductive switching circuits. The BUK7514-60E body diode is rated for 58 A continuous source current.

Is BUK7514-60E compatible with standard 5 V or 3.3 V microcontroller GPIOs for gate drive?

Yes - the BUK7514-60E is a standard-level MOSFET with V_GS(th) ≥ 1 V at 175 °C, ensuring reliable turn-on with 5 V or 3.3 V logic. However, full enhancement (low R_DS(on)) requires V_GS ≥ 10 V; thus a gate driver or charge pump is needed for high-efficiency operation. The BUK7514-60E gate threshold stability across temperature makes it suitable for direct MCU interface in less demanding duty cycles.

What is the thermal resistance from junction to mounting base for BUK7514-60E, and how does it impact heatsink design?

The BUK7514-60E has R_th(j-mb) = 1.56 K/W (Table 5), measured from silicon junction to the metal mounting base. This low value enables efficient heat transfer to an external heatsink, allowing designers to calculate required heatsink thermal resistance using ΔT = P_diss × (R_th(j-mb) + R_th(mb-hs)). The BUK7514-60E mounting base is electrically connected to the drain, so electrical isolation between heatsink and system ground must be maintained.

How is the avalanche capability of BUK7514-60E validated, and what energy level is supported?

The BUK7514-60E is rated for non-repetitive drain-source avalanche energy E_DS(AL)S = 37 mJ under defined conditions (I_D = 58 A, V_sup ≤ 60 V, R_GS = 50 Ω, T_j(init) = 25 °C, unclamped). This rating is validated per JEDEC standards and confirmed in Figure 3 of the datasheet. The BUK7514-60E also supports repetitive avalanche operation, critical for automotive solenoid and motor control reliability.