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NXP Semiconductors BUK75150-55A,127

Part No.:
BUK75150-55A,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK75150-55A,127.pdf
Description:
MOSFET N-CH 55V 11A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,826

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Product details

Overview

BUK75150-55A from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 55 V VDS, 11 A continuous drain current at 25 °C, and 127 mΩ typical RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is Q101-compliant for automotive use in 12 V/24 V load switching.

For engineers reviewing the BUK75150-55A datasheet, BUK75150-55A pinout, BUK75150-55A application, or BUK75150-55A equivalent, this page delivers verified electrical specs, thermal resistance (Rth(j-mb) = 4.1 K/W), avalanche energy rating (16 mJ), gate charge (5.5 nC), and automotive-grade reliability data - all confirmed from the official 2003 product data sheet.

Technical Context

This standard-level MOSFET features a trench-gate structure optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable drive from 5 V microcontrollers without level-shifting.

The device integrates a fast-recovery source-drain diode (trr = 32 ns, Qr = 50 nC) and exhibits low dynamic capacitances (Ciss = 242 pF typ, Coss = 40 pF typ), supporting efficient high-frequency switching in motor control and solenoid drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum DC drain-source blocking voltage; suitable for 12 V/24 V automotive bus with margin.
RDS(on) 127 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1.3 W conduction loss at 10 A, reducing heatsink requirements.
ID (cont) 11 A at Tmb = 25 °C - Continuous current capability with heatsink mounting; derates to 7.8 A at 100 °C mounting base.
EAS 16 mJ (unclamped inductive) - Supports robust operation in relay/motor flyback circuits without external snubbers.
Rth(j-mb) 4.1 K/W - Low thermal resistance from junction to mounting base enables high-power dissipation with minimal ΔT.
Qg(tot) 5.5 nC - Low total gate charge allows fast switching with modest gate driver current (e.g., <100 mA peak).
VGS(th) 2–4 V at 25 °C - Standard-level gate drive compatibility with 5 V logic and automotive MCUs.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 2 connected internally to drain and base). Mounting base serves as both mechanical anchor and thermal path.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control terminal; requires 10 V for full enhancement; threshold range 2–4 V supports 5 V logic drive.
2 Drain (D) Main power output terminal; electrically connected to mounting base; not externally accessible in SOT78.
3 Source (S) Power return path and reference for gate drive; separates control and power ground domains.
Mounting Base Drain (D) Integral thermal and electrical connection to drain; must be isolated from PCB ground unless drain is grounded.

Key Features

Feature Design Value
TrenchMOS™ technology Enables 127 mΩ RDS(on) in TO-220AB, reducing conduction losses vs. planar MOSFETs of same size.
Q101 qualification Meets AEC-Q101 stress test requirements for automotive discrete semiconductors - validated for under-hood use.
175 °C maximum junction temperature Supports operation in high-ambient environments (e.g., engine compartments) without derating penalties.
Standard-level gate drive Operates fully enhanced with 10 V gate voltage - compatible with common 5 V MCU GPIOs via simple buffer.
16 mJ avalanche energy rating Withstands repetitive unclamped inductive turn-off events in motor/solenoid loads without failure.

Applications

Automotive Body Control Module Industrial 24 V Solenoid Driver

Use Scenario: Switching door locks, seat heaters, and lighting loads in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling resistive and inductive loads up to 11 A.

Use Value: Q101 compliance ensures reliability over 15-year vehicle lifetime; 175 °C rating accommodates under-dash ambient temperatures.

Use Scenario: Driving pneumatic/hydraulic solenoids in factory automation panels powered from 24 V DC rails.

IC Role / Device Role / Timing Role: Robust low-side switch handling 100 ms–1 s duty cycles with inductive kickback.

Use Value: 16 mJ EAS eliminates need for external TVS/clamp diodes; RDS(on) stability across temperature simplifies thermal design.

DC Motor Starter Circuit Commercial Lighting Ballast Control

Use Scenario: Starting small brushed DC motors (e.g., radiator fans, wiper systems) with high inrush current.

IC Role / Device Role / Timing Role: Low-side switching element managing stall currents up to 44 A peak (IDM).

Use Value: Fast tf = 10 ns and low Qgd = 2.7 nC minimize switching losses during PWM commutation.

Use Scenario: Dimmable LED driver or fluorescent ballast where precise on/off timing controls light intensity.

IC Role / Device Role / Timing Role: Power switch in buck or linear regulation stage, driven by MCU PWM signal.

Use Value: Low Ciss = 242 pF and fast tr/tf support clean 1–20 kHz switching without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP12PF06 60 V VDS, 12 A ID, 130 mΩ RDS(on), TO-220FP package (insulated flange); higher Rth(j-a) = 65 K/W. Designed for non-heatsinked PCB mounting; lacks Q101 qualification and 175 °C rating. Choose STP12PF06 only if flange isolation is required and automotive qualification is unnecessary.
IRFZ44NPBF 55 V VDS, 49 A ID, 28 mΩ RDS(on), TO-220AB; higher gate charge (71 nC) and no avalanche rating. Optimized for high-current, low-RDS(on) applications but unsuitable for unclamped inductive loads. Choose IRFZ44NPBF only for high-efficiency DC-DC or battery-switching where avalanche stress is absent.

Compared with STP12PF06 and IRFZ44NPBF, the BUK75150-55A uniquely combines Q101 qualification, 175 °C operation, and 16 mJ avalanche ruggedness in a standard-level TO-220AB package - making it the only option qualified for automotive body electronics with inductive loads.

Availability

BUK75150-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V solenoid drivers, and DC motor starter circuits requiring stable component supply and long-term lifecycle support.

Supply support for BUK75150-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia - formerly Philips Semiconductors - is a global leader in high-volume, high-reliability discrete and logic ICs, with core expertise in automotive-qualified power semiconductors.

The BUK75150-55A belongs to the TrenchMOS™ standard-level FET family, engineered specifically for robust, cost-effective power switching in automotive and industrial 12 V/24 V systems.

FAQ

What is the maximum continuous drain current for BUK75150-55A at 100 °C mounting base temperature?

The BUK75150-55A supports 7.8 A continuous drain current (ID) at Tmb = 100 °C and VGS = 10 V, as specified in Table 3 of the official product data sheet. This derating reflects thermal limits of the TO-220AB package and ensures safe operation without exceeding 175 °C junction temperature. The BUK75150-55A maintains stable RDS(on) performance across this range due to its trench architecture.

Is BUK75150-55A qualified for automotive applications?

Yes, the BUK75150-55A is Q101-compliant per the manufacturer's documentation, confirming qualification for automotive electronic systems. It meets AEC-Q101 stress tests including temperature cycling, humidity bias HAST, and high-temperature operating life. The BUK75150-55A is explicitly rated for 175 °C junction operation and designed for under-hood environments in 12 V/24 V vehicle architectures.

What is the gate-source threshold voltage range for BUK75150-55A?

The BUK75150-55A has a gate-source threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C, and 1–4.4 V across the full temperature range (−55 °C to +175 °C), as shown in Table 5. This standard-level characteristic allows direct drive from 5 V microcontrollers. The BUK75150-55A remains fully enhanced above 4 V, ensuring predictable turn-on behavior in noisy automotive environments.

Does BUK75150-55A include an integrated body diode, and what are its key parameters?

Yes, the BUK75150-55A integrates a source-drain (body) diode with forward voltage VSD = 1.25–1.5 V at IS = 10 A and reverse recovery time trr = 32 ns. Recovered charge Qr is 50 nC. These values are measured with VGS = −10 V and dIS/dt = −100 A/µs. The BUK75150-55A body diode enables freewheeling in inductive loads and supports synchronous rectification in certain topologies.

What is the thermal resistance from junction to mounting base for BUK75150-55A?

The BUK75150-55A has a maximum thermal resistance Rth(j-mb) of 4.1 K/W, as specified in Table 4. This value applies to the TO-220AB (SOT78) package and represents the dominant thermal path when the mounting base is properly heatsinked. The BUK75150-55A's low Rth(j-mb) enables high power dissipation (up to 36 W at 25 °C) with minimal temperature rise between junction and heatsink interface.

BUK75150-55A,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
322 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
36W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK75150-55A,127 FAQ

1.How can I place an order for BUK75150-55A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK75150-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK75150-55A,127 reliable?

The price and inventory of BUK75150-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK75150-55A,127 is usually 5 days.

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BUK75150-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK75150-55A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK75150-55A,127?

For technical support, including BUK75150-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK75150-55A,127 requirements.

6.How does Aetrix verify that BUK75150-55A,127 is sourced from the original manufacturer or authorized distributors?

All BUK75150-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK75150-55A,127 meets industry standards.

7.What is the process for return or replacement of BUK75150-55A,127?

All BUK75150-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK75150-55A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK75150-55A,127 part is unused and in its original packaging.

Return procedure for BUK75150-55A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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