NXP Semiconductors BUK75150-55A,127
- Part No.:
- BUK75150-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK75150-55A,127.pdf
- Description:
- MOSFET N-CH 55V 11A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,826
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Product details
Overview
BUK75150-55A from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 55 V VDS, 11 A continuous drain current at 25 °C, and 127 mΩ typical RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is Q101-compliant for automotive use in 12 V/24 V load switching.
For engineers reviewing the BUK75150-55A datasheet, BUK75150-55A pinout, BUK75150-55A application, or BUK75150-55A equivalent, this page delivers verified electrical specs, thermal resistance (Rth(j-mb) = 4.1 K/W), avalanche energy rating (16 mJ), gate charge (5.5 nC), and automotive-grade reliability data - all confirmed from the official 2003 product data sheet.
Technical Context
This standard-level MOSFET features a trench-gate structure optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable drive from 5 V microcontrollers without level-shifting.
The device integrates a fast-recovery source-drain diode (trr = 32 ns, Qr = 50 nC) and exhibits low dynamic capacitances (Ciss = 242 pF typ, Coss = 40 pF typ), supporting efficient high-frequency switching in motor control and solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum DC drain-source blocking voltage; suitable for 12 V/24 V automotive bus with margin. |
| RDS(on) | 127 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1.3 W conduction loss at 10 A, reducing heatsink requirements. |
| ID (cont) | 11 A at Tmb = 25 °C - Continuous current capability with heatsink mounting; derates to 7.8 A at 100 °C mounting base. |
| EAS | 16 mJ (unclamped inductive) - Supports robust operation in relay/motor flyback circuits without external snubbers. |
| Rth(j-mb) | 4.1 K/W - Low thermal resistance from junction to mounting base enables high-power dissipation with minimal ΔT. |
| Qg(tot) | 5.5 nC - Low total gate charge allows fast switching with modest gate driver current (e.g., <100 mA peak). |
| VGS(th) | 2–4 V at 25 °C - Standard-level gate drive compatibility with 5 V logic and automotive MCUs. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 2 connected internally to drain and base). Mounting base serves as both mechanical anchor and thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires 10 V for full enhancement; threshold range 2–4 V supports 5 V logic drive. |
| 2 | Drain (D) | Main power output terminal; electrically connected to mounting base; not externally accessible in SOT78. |
| 3 | Source (S) | Power return path and reference for gate drive; separates control and power ground domains. |
| Mounting Base | Drain (D) | Integral thermal and electrical connection to drain; must be isolated from PCB ground unless drain is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 127 mΩ RDS(on) in TO-220AB, reducing conduction losses vs. planar MOSFETs of same size. |
| Q101 qualification | Meets AEC-Q101 stress test requirements for automotive discrete semiconductors - validated for under-hood use. |
| 175 °C maximum junction temperature | Supports operation in high-ambient environments (e.g., engine compartments) without derating penalties. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate voltage - compatible with common 5 V MCU GPIOs via simple buffer. |
| 16 mJ avalanche energy rating | Withstands repetitive unclamped inductive turn-off events in motor/solenoid loads without failure. |
Applications
| Automotive Body Control Module | Industrial 24 V Solenoid Driver |
|---|---|
Use Scenario: Switching door locks, seat heaters, and lighting loads in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling resistive and inductive loads up to 11 A. Use Value: Q101 compliance ensures reliability over 15-year vehicle lifetime; 175 °C rating accommodates under-dash ambient temperatures. |
Use Scenario: Driving pneumatic/hydraulic solenoids in factory automation panels powered from 24 V DC rails. IC Role / Device Role / Timing Role: Robust low-side switch handling 100 ms–1 s duty cycles with inductive kickback. Use Value: 16 mJ EAS eliminates need for external TVS/clamp diodes; RDS(on) stability across temperature simplifies thermal design. |
| DC Motor Starter Circuit | Commercial Lighting Ballast Control |
Use Scenario: Starting small brushed DC motors (e.g., radiator fans, wiper systems) with high inrush current. IC Role / Device Role / Timing Role: Low-side switching element managing stall currents up to 44 A peak (IDM). Use Value: Fast tf = 10 ns and low Qgd = 2.7 nC minimize switching losses during PWM commutation. |
Use Scenario: Dimmable LED driver or fluorescent ballast where precise on/off timing controls light intensity. IC Role / Device Role / Timing Role: Power switch in buck or linear regulation stage, driven by MCU PWM signal. Use Value: Low Ciss = 242 pF and fast tr/tf support clean 1–20 kHz switching without shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12PF06 | 60 V VDS, 12 A ID, 130 mΩ RDS(on), TO-220FP package (insulated flange); higher Rth(j-a) = 65 K/W. | Designed for non-heatsinked PCB mounting; lacks Q101 qualification and 175 °C rating. | Choose STP12PF06 only if flange isolation is required and automotive qualification is unnecessary. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(on), TO-220AB; higher gate charge (71 nC) and no avalanche rating. | Optimized for high-current, low-RDS(on) applications but unsuitable for unclamped inductive loads. | Choose IRFZ44NPBF only for high-efficiency DC-DC or battery-switching where avalanche stress is absent. |
Compared with STP12PF06 and IRFZ44NPBF, the BUK75150-55A uniquely combines Q101 qualification, 175 °C operation, and 16 mJ avalanche ruggedness in a standard-level TO-220AB package - making it the only option qualified for automotive body electronics with inductive loads.
Availability
BUK75150-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V solenoid drivers, and DC motor starter circuits requiring stable component supply and long-term lifecycle support.
Supply support for BUK75150-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia - formerly Philips Semiconductors - is a global leader in high-volume, high-reliability discrete and logic ICs, with core expertise in automotive-qualified power semiconductors.
The BUK75150-55A belongs to the TrenchMOS™ standard-level FET family, engineered specifically for robust, cost-effective power switching in automotive and industrial 12 V/24 V systems.
FAQ
What is the maximum continuous drain current for BUK75150-55A at 100 °C mounting base temperature?
The BUK75150-55A supports 7.8 A continuous drain current (ID) at Tmb = 100 °C and VGS = 10 V, as specified in Table 3 of the official product data sheet. This derating reflects thermal limits of the TO-220AB package and ensures safe operation without exceeding 175 °C junction temperature. The BUK75150-55A maintains stable RDS(on) performance across this range due to its trench architecture.
Is BUK75150-55A qualified for automotive applications?
Yes, the BUK75150-55A is Q101-compliant per the manufacturer's documentation, confirming qualification for automotive electronic systems. It meets AEC-Q101 stress tests including temperature cycling, humidity bias HAST, and high-temperature operating life. The BUK75150-55A is explicitly rated for 175 °C junction operation and designed for under-hood environments in 12 V/24 V vehicle architectures.
What is the gate-source threshold voltage range for BUK75150-55A?
The BUK75150-55A has a gate-source threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C, and 1–4.4 V across the full temperature range (−55 °C to +175 °C), as shown in Table 5. This standard-level characteristic allows direct drive from 5 V microcontrollers. The BUK75150-55A remains fully enhanced above 4 V, ensuring predictable turn-on behavior in noisy automotive environments.
Does BUK75150-55A include an integrated body diode, and what are its key parameters?
Yes, the BUK75150-55A integrates a source-drain (body) diode with forward voltage VSD = 1.25–1.5 V at IS = 10 A and reverse recovery time trr = 32 ns. Recovered charge Qr is 50 nC. These values are measured with VGS = −10 V and dIS/dt = −100 A/µs. The BUK75150-55A body diode enables freewheeling in inductive loads and supports synchronous rectification in certain topologies.
What is the thermal resistance from junction to mounting base for BUK75150-55A?
The BUK75150-55A has a maximum thermal resistance Rth(j-mb) of 4.1 K/W, as specified in Table 4. This value applies to the TO-220AB (SOT78) package and represents the dominant thermal path when the mounting base is properly heatsinked. The BUK75150-55A's low Rth(j-mb) enables high power dissipation (up to 36 W at 25 °C) with minimal temperature rise between junction and heatsink interface.
BUK75150-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 322 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK75150-55A,127 FAQ
1.How can I place an order for BUK75150-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK75150-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK75150-55A,127 reliable?
The price and inventory of BUK75150-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK75150-55A,127 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK75150-55A,127?
For technical support, including BUK75150-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK75150-55A,127 requirements.
6.How does Aetrix verify that BUK75150-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK75150-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK75150-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK75150-55A,127?
All BUK75150-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK75150-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK75150-55A,127 part is unused and in its original packaging.
Return procedure for BUK75150-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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