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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK751R8-40E,127

Name: BUK751R8-40E,127
Brand: Nexperia USA Inc.
SKU: BUK751R8-40E,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK751R8-40E,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK751R8-40E,127.pdf

Description:: MOSFET N-CH 40V 120A TO220AB

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Product details

Overview

BUK751R8-40E from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78A) package, rated for 40 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 1.5 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching - including electric power steering and start-stop micro-hybrid systems.

For engineers reviewing the BUK751R8-40E datasheet, BUK751R8-40E pinout, BUK751R8-40E application, or BUK751R8-40E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, true standard-level gate drive (V_GS(th) > 1 V at 175 °C), and low-inductance internal layout optimized for high-current switching stability.

Technical Context

This MOSFET employs TrenchMOS technology to achieve ultra-low on-resistance while maintaining robust thermal performance and avalanche ruggedness. Its gate threshold voltage remains functional up to 175 °C, enabling reliable operation in thermally demanding under-hood environments without requiring elevated gate drive.

The device features integrated source-drain diode with 56 ns reverse recovery time and 94 nC recovered charge, supporting synchronous rectification and freewheeling in high-frequency DC-DC and motor control topologies. Internal inductances are tightly controlled: L_D = 4.5 nH, L_S = 7.5 nH, minimizing switching oscillation during hard commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with load-dump margin.
R_DS(on)	1.5 mΩ (typ) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D (cont)	120 A at T_mb = 25 °C - Limited by TO-220AB package thermal capacity; derates to zero at T_mb ≈ 120 °C.
E_AS	1020 mJ (non-repetitive) - Supports single-pulse inductive energy absorption without failure in solenoid or motor control faults.
R_th(j-mb)	0.43 K/W - Junction-to-mounting-base thermal resistance enables efficient heatsink coupling for high-power switching.
Q_GD	48.2 nC - Gate-drain charge determines Miller plateau duration and influences turn-off speed and dv/dt immunity.
V_GS(th)	1 V (min) at T_j = 175 °C - Ensures gate turn-on margin remains sufficient even at maximum operating temperature.

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink mounting base connected internally to the drain terminal. Mounting hole enables mechanical stability and optimal thermal transfer to external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level MOSFET gate input; requires ≥10 V for full enhancement; V_GS(th) > 1 V ensures turn-on at 175 °C.
2 (D)	Drain	Main high-side switching node; electrically tied to mounting base for low-inductance power path and thermal conduction.
3 (S)	Source	Power return path; isolated from mounting base; used for current sensing and gate drive reference.
Mounting base (mb)	Drain connection	Integral part of drain terminal; must be electrically insulated from chassis unless circuit design requires drain-to-chassis tie.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability across temperature, humidity, and vibration stress profiles per JESD47.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching events up to 1020 mJ, enabling robust fault handling in motor drives.
175 °C junction rating	Full electrical specification guaranteed up to T_j = 175 °C, supporting under-hood placement without derating penalties.
True standard-level gate	V_GS(th) ≥ 1 V at 175 °C ensures compatibility with 12 V microcontroller GPIOs without level-shifting circuitry.
Low internal inductance	L_D = 4.5 nH, L_S = 7.5 nH - Minimizes voltage overshoot and ringing during fast switching transitions.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Control

Use Scenario: High-current H-bridge driver for 12 V EPS motor actuation with rapid direction reversal and torque ripple suppression.

IC Role / Device Role / Timing Role: Main high-side and low-side power switch in dual-phase bridge configuration; handles bidirectional 80–100 A peak currents.

Use Value: 1.5 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 2 mΩ devices, lowering thermal stress on PCB-mounted heatsinks.

Use Scenario: Intelligent battery disconnect and starter motor engagement/disengagement in 12 V micro-hybrid architectures.

IC Role / Device Role / Timing Role: High-current load switch controlling starter solenoid and auxiliary battery isolation relays.

Use Value: Repetitive avalanche rating absorbs inductive kickback from solenoid coil de-energization without external snubbers.

Transmission Control Solenoids

High-Performance Lighting Drivers

Use Scenario: PWM-controlled proportional pressure regulation in automatic transmission valve bodies using 12 V solenoids.

IC Role / Device Role / Timing Role: Low-loss, high-duty-cycle switching element driving 10–15 A solenoid loads at 100–500 Hz PWM frequencies.

Use Value: 48.2 nC Q_GD enables clean turn-off with minimal Miller-induced shoot-through risk in half-bridge configurations.

Use Scenario: High-brightness LED headlamp matrix switching in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Primary current-switching FET in constant-current LED driver stage delivering up to 10 A per channel.

Use Value: 0.43 K/W R_th(j-mb) allows direct bolt-down thermal interface to aluminum heat spreader, eliminating need for thermal vias or copper pours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 0.75 mΩ R_DS(on), D²PAK package, 175 °C rated, AEC-Q101	Higher current capability but larger footprint and higher gate charge (Q_G = 195 nC); requires more gate drive power.	Select when system demands >120 A continuous current and board space permits D²PAK mounting.
IRF1404ZPBF	40 V, 180 A, 3.4 mΩ R_DS(on), TO-220AB, non-automotive grade, 175 °C rated	No AEC-Q101 qualification; lower thermal robustness; higher R_DS(on) increases conduction loss by ~125% at 80 A.	Acceptable only for non-safety-critical industrial 12 V systems where qualification and long-term reliability are not mandated.

Compared with STL220N4F7AG, BUK751R8-40E offers tighter thermal integration in TO-220AB and lower gate drive demand; versus IRF1404ZPBF, it delivers certified automotive reliability and 56% lower conduction loss at rated current - critical for EPS and transmission control longevity.

Availability

BUK751R8-40E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK751R8-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

This device belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive 12 V vehicle subsystems where AEC-Q101 compliance, avalanche ruggedness, and low R_DS(on) are mandatory.

FAQ

Is BUK751R8-40E suitable for synchronous rectification in 12 V DC-DC converters?

Yes - its 56 ns reverse recovery time, 94 nC recovered charge, and low Q_GD/Q_G ratio enable efficient synchronous rectification at up to 300 kHz. The integrated source-drain diode supports freewheeling paths without external Schottky diodes, reducing component count and board area.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Per Figure 1 in the datasheet, continuous 120 A operation is only permitted at T_mb ≤ 25 °C. At T_mb = 100 °C, the rated continuous current drops to 120 A due to thermal derating - meaning full-rated current is strictly limited to cold-mounting conditions with active heatsinking.

Does the mounting base require electrical isolation from the heatsink in all applications?

Yes - the mounting base is internally connected to the drain terminal. Unless the circuit design explicitly requires drain-to-heatsink connection (e.g., high-side switch with common-drain topology), an electrically insulating thermal pad or mica washer must be used to prevent short circuits to chassis ground or adjacent components.

How does the 175 °C V_GS(th) specification impact gate drive design?

The minimum V_GS(th) of 1 V at 175 °C ensures the MOSFET remains fully enhanced with standard 12 V logic-level gate drivers even under worst-case thermal conditions. This eliminates need for gate boosters or temperature-compensated bias networks in automotive under-hood deployments.

BUK751R8-40E,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 349W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK751R8-40E,127 FAQ

1.How can I place an order for BUK751R8-40E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK751R8-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK751R8-40E,127 reliable?

The price and inventory of BUK751R8-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK751R8-40E,127 is usually 5 days.

3.What payment methods are accepted for BUK751R8-40E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK751R8-40E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK751R8-40E,127?

BUK751R8-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK751R8-40E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK751R8-40E,127?

For technical support, including BUK751R8-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK751R8-40E,127 requirements.

6.How does Aetrix verify that BUK751R8-40E,127 is sourced from the original manufacturer or authorized distributors?

All BUK751R8-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK751R8-40E,127 meets industry standards.

7.What is the process for return or replacement of BUK751R8-40E,127?

All BUK751R8-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK751R8-40E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK751R8-40E,127 part is unused and in its original packaging.

Return procedure for BUK751R8-40E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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