Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK7520-100A,127

Part No.:
BUK7520-100A,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK7520-100A,127.pdf
Description:
MOSFET N-CH 100V 63A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,409

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK7520-100A from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for automotive-critical power switching. It delivers 100 V drain-source voltage rating, 63 A continuous drain current at 25 °C mounting base temperature, and 50 mΩ RDS(on) at 175 °C junction temperature-enabling robust 12 V/24 V load control in thermally demanding environments.

For engineers reviewing the BUK7520-100A datasheet, BUK7520-100A pinout, BUK7520-100A application, or BUK7520-100A equivalent, key selection criteria include AEC-Q101 qualification, 175 °C maximum junction temperature, gate compatibility with standard 10 V drive, and avalanche energy rating of 400 mJ for unclamped inductive switching reliability.

Technical Context

This device implements a trench-gate MOSFET structure optimized for low conduction loss and high thermal resilience. Its gate threshold voltage ranges from 1 V at 175 °C to 4.4 V at –55 °C, ensuring stable turn-on behavior across automotive temperature extremes. The integrated source-drain diode supports freewheeling in inductive loads with 0.85 V forward voltage at 25 A and 76 ns reverse recovery time.

Thermal design is enabled by a 0.75 K/W junction-to-mounting-base resistance, allowing direct heatsink mounting via the drain-connected metal tab. Dynamic performance includes 3430 pF input capacitance and 21 ns turn-on delay under 10 V gate drive with 10 Ω external resistor-supporting efficient PWM operation up to several hundred kHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for 12 V/24 V/42 V automotive systems with margin against load dump transients
ID (continuous) 63 A at Tmb = 25 °C - Sustained current capability with heatsink; derates to 44 A at 100 °C mounting base
RDS(on) 17 mΩ typ at 25 °C / 50 mΩ max at 175 °C - Low conduction loss enabling <1 W dissipation at 25 A, critical for thermal management
EAS 400 mJ - Non-repetitive avalanche energy rating supporting reliable operation during inductive switch-off without snubbers
Tj max 175 °C - Extended junction temperature rating enabling operation in engine bay or under-hood environments
VGS(th) 2–4 V - Gate threshold compatible with standard 5 V or 10 V logic-level drivers without level-shifting
Ciss 3430 pF typ - Input capacitance defining gate drive strength requirement; enables use with common 1 A gate drivers

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted metal tab (drain-connected), 3 leads, and one mounting hole. Mounting base serves as thermal path and electrical connection to drain.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; requires ≤20 V gate-source voltage; 2–4 V threshold enables standard logic-level drive
2 D (Drain) Main power output; electrically and thermally connected to mounting base; carries full load current and dissipates heat
3 S (Source) Power return path; referenced for gate drive; internal source inductance of 7.5 nH affects high-speed switching stability

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages
175 °C junction rating Enables direct placement in high-temperature zones (e.g., near engines or inverters) without derating penalties beyond datasheet curves
Low RDS(on) over temperature 50 mΩ max at 175 °C ensures predictable conduction loss and thermal runaway immunity in sustained high-load conditions
Drain-connected mounting base Provides low-thermal-resistance path (0.75 K/W) to heatsink while simplifying PCB layout and mechanical assembly
Unclamped avalanche ruggedness 400 mJ rating allows safe energy absorption during inductive turn-off events-reducing need for external clamping components

Applications

Automotive Engine Control Industrial Motor Drives

Use Scenario: Controlling fuel injectors, ignition coils, and EGR valves in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling pulsed 12 V loads with fast turn-on (<21 ns) and robust avalanche tolerance.

Use Value: AEC-Q101 compliance and 175 °C operation ensure reliability in under-hood environments where ambient exceeds 125 °C.

Use Scenario: Driving 24 V DC brush motors in factory automation actuators and conveyor systems.

IC Role / Device Role / Timing Role: Main power stage switch with 63 A continuous current capacity and 400 mJ avalanche energy absorption during motor commutation.

Use Value: Low 17 mΩ RDS(on) minimizes I²R losses at full load, reducing heatsink size and system power consumption.

Commercial Vehicle Lighting Off-Highway Equipment Solenoids

Use Scenario: Switching LED headlamps and fog lamps in trucks and buses with PWM dimming.

IC Role / Device Role / Timing Role: Low-side switching element with fast fall time (56 ns) enabling precise duty-cycle control and reduced EMI.

Use Value: Gate threshold stability across –40 °C to +175 °C prevents unintended turn-on during cold cranking or hot soak conditions.

Use Scenario: Energizing hydraulic solenoid valves in agricultural and construction machinery.

IC Role / Device Role / Timing Role: High-current inductive load switch requiring robust reverse recovery (76 ns trr) and low forward voltage (0.85 V) for diode freewheeling.

Use Value: Integrated source-drain diode eliminates need for external flyback diode, saving board space and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP110N10F7 100 V, 110 A, 9.5 mΩ @ 25 °C; TO-220FP package; no AEC-Q101 qualification Higher current rating but lacks automotive qualification and has lower thermal robustness (Tj max = 175 °C same, but no avalanche rating specified) Select when higher peak current is needed and automotive qualification is not required; verify thermal design due to different Rth(j-mb)
IRF540NPBF 100 V, 33 A, 44 mΩ @ 25 °C; TO-220AB; no AEC-Q101 or specified avalanche rating Lower current and higher RDS(on); suitable only for non-automotive 12 V loads with moderate thermal constraints Choose for cost-sensitive industrial applications where AEC-Q101 and 175 °C operation are unnecessary

Compared with STP110N10F7 and IRF540NPBF, the BUK7520-100A uniquely combines AEC-Q101 qualification, 400 mJ avalanche ruggedness, and guaranteed 50 mΩ RDS(on) at 175 °C-making it the only option qualified for thermally aggressive automotive power switching where reliability under transient stress is mandatory.

Availability

BUK7520-100A is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, commercial vehicle lighting systems, and off-highway equipment solenoid control requiring stable component supply across extended temperature and lifetime requirements.

Supply support for BUK7520-100A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

This device belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability, high-temperature power switching in safety-critical vehicle subsystems-including those subject to AEC-Q101 stress testing and ISO/TS 16949 manufacturing controls.

FAQ

Is BUK7520-100A suitable for high-frequency PWM motor control?

Yes-it supports PWM operation up to several hundred kHz, with 21 ns turn-on delay, 56 ns fall time, and 3430 pF input capacitance. Gate drive strength must be ≥1 A peak to achieve these timings; its 17 mΩ RDS(on) minimizes conduction loss, while 76 ns reverse recovery time ensures clean freewheeling in brushed DC motor H-bridges.

What is the maximum allowable mounting base temperature for continuous 63 A operation?

The datasheet specifies 63 A continuous drain current only at Tmb = 25 °C. At 100 °C mounting base temperature, the rated current drops to 44 A. Derating follows Figure 1 in the datasheet; operation above 100 °C mounting base requires active cooling or reduced load to maintain junction temperature ≤175 °C.

Does the mounting base require electrical isolation from the heatsink?

Yes-the mounting base is internally connected to the drain terminal. If the heatsink is grounded or at a different potential, electrical isolation (e.g., mica washer + thermal grease or isolated mounting kit) is mandatory to prevent short circuits. Failure to isolate may cause catastrophic failure or system ground loop issues.

Can BUK7520-100A replace older BUZ70 or IRFZ44N devices in existing designs?

It can serve as a functional upgrade: both share TO-220AB package and 100 V rating, but BUK7520-100A offers lower RDS(on) (17 mΩ vs. ~28 mΩ), AEC-Q101 qualification, and 400 mJ avalanche rating-unavailable in BUZ70/IRFZ44N. Layout is pin-compatible, but gate drive and thermal design should be revalidated due to higher current density.

BUK7520-100A,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4373 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK7520-100A,127 FAQ

1.How can I place an order for BUK7520-100A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7520-100A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7520-100A,127 reliable?

The price and inventory of BUK7520-100A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7520-100A,127 is usually 5 days.

3.What payment methods are accepted for BUK7520-100A,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7520-100A,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7520-100A,127?

BUK7520-100A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7520-100A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7520-100A,127?

For technical support, including BUK7520-100A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7520-100A,127 requirements.

6.How does Aetrix verify that BUK7520-100A,127 is sourced from the original manufacturer or authorized distributors?

All BUK7520-100A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7520-100A,127 meets industry standards.

7.What is the process for return or replacement of BUK7520-100A,127?

All BUK7520-100A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7520-100A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7520-100A,127 part is unused and in its original packaging.

Return procedure for BUK7520-100A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK7520-100A,127 Tags

  • BUK7520-100A,127
  • BUK7520-100A,127 PDF
  • BUK7520-100A,127 Datasheet
  • BUK7520-100A,127 Specifications
  • BUK7520-100A,127 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK7520-100A,127
  • Buy BUK7520-100A,127
  • BUK7520-100A,127 Price
  • BUK7520-100A,127 Distributor
  • BUK7520-100A,127 Supplier
  • BUK7520-100A,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER