NXP Semiconductors BUK7524-55,127
- Part No.:
- BUK7524-55,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK7524-55,127.pdf
- Description:
- MOSFET N-CH 55V 45A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,085
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Product details
Overview
BUK7524-55 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power transistor in TO220AB package, rated for 55 V drain-source voltage, 45 A DC drain current at 25 °C, and 24 mΩ RDS(ON) at VGS = 10 V. It integrates ESD protection up to 2 kV and is designed for automotive and general-purpose switching applications such as motor control and power supply load switching.
For engineers reviewing the BUK7524-55 datasheet, BUK7524-55 pinout, BUK7524-55 application, or BUK7524-55 equivalent, key selection criteria include its standard-level gate drive compatibility (10 V), low on-resistance with thermal derating, integral body diode performance, and TO220AB mounting-base thermal path for high-power dissipation.
Technical Context
The BUK7524-55 employs trench-gate MOSFET technology to achieve low RDS(ON) and high current capability while maintaining robust avalanche energy rating (80 mJ unclamped). Its gate threshold voltage ranges from 2.0 V to 4.0 V at 25 °C, enabling reliable turn-on with standard logic-level drivers.
Thermal design is enabled by a junction-to-mounting-base thermal resistance of 1.45 K/W (max), supporting heatsink attachment via the drain-connected tab. The device features a built-in body diode with 0.95–1.2 V forward voltage at 25 A and 40 ns reverse recovery time under specified conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - defines maximum blocking voltage in switching circuits without breakdown risk |
| ID (DC) | 45 A at Tmb = 25 °C - usable continuous current with adequate heatsinking |
| RDS(ON) | 24 mΩ max at VGS = 10 V - determines conduction loss and junction temperature rise under load |
| Ptot | 103 W at Tmb = 25 °C - total power dissipation limit before thermal shutdown or damage |
| Tj | 175 °C maximum operating junction temperature - sets upper thermal boundary for reliability |
| ESD Rating | 2 kV HBM - enables handling without external ESD protection in assembly environments |
| Qrr | 0.07 µC typical - quantifies reverse recovery charge affecting switching losses in inductive loads |
Pinout & Package
Package: TO220AB (SOT78), plastic envelope with drain-connected mounting tab; net mass 2 g; UL94 V0 compliant epoxy.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤16 V gate-source voltage; sensitive to ESD |
| 2 | Drain | Main current-carrying terminal connected internally to mounting base for thermal conduction |
| 3 | Source | Reference node for gate drive and current return path; low-inductance source lead (7.5 nH) |
| Tab | Drain | Electrically and thermally tied to pin 2; must be isolated from chassis unless circuit design permits common-drain configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 24 mΩ RDS(ON) at 55 V rating, reducing conduction losses vs planar MOSFETs |
| Integral zener ESD protection | 2 kV Human Body Model rating eliminates need for external gate protection in many layouts |
| Drain-connected mounting base | Provides low-thermal-resistance path (Rth j-mb = 1.45 K/W max) for direct heatsink attachment |
| Robust avalanche capability | 80 mJ non-repetitive unclamped inductive energy rating supports reliable operation in inductive switching |
| Body diode with fast recovery | 40 ns trr and 0.07 µC Qrr reduce switching losses in freewheeling and synchronous rectification |
Applications
| Automotive Door Lock Actuator | Industrial DC Motor Starter |
|---|---|
Use Scenario: 12 V battery-powered solenoid driver controlling mechanical door latch engagement. IC Role / Device Role / Timing Role: High-side or low-side power switch enabling/disabling actuator coil current. Use Value: 45 A DC rating handles inrush current; 24 mΩ RDS(ON) minimizes heat generation during extended hold periods. | Use Scenario: PWM-controlled 24 V brushed DC motor for conveyor belt start/stop sequencing. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-direction drive stage. Use Value: 80 mJ avalanche energy withstands back-EMF spikes during abrupt motor stop; TO220AB tab enables bolt-down heatsinking. |
| Server Power Supply OR-ing FET | LED Streetlight Driver Output Stage |
Use Scenario: Redundant 48 V input rail combining using ideal diode configuration. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and heat. Use Value: 0.95 V VSD at 25 A yields lower conduction loss than discrete diodes; low Qrr prevents cross-conduction in high-frequency OR-ing. | Use Scenario: Constant-current switching stage regulating high-power LED string current in outdoor lighting. IC Role / Device Role / Timing Role: Main switching transistor in buck or boost converter output stage. Use Value: 175 °C Tj rating supports operation in sealed, high-ambient enclosures; 103 W Ptot allows high-duty-cycle dimming without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 14 mΩ RDS(ON), TO-220FP package (isolated tab) | Higher voltage margin but lower thermal resistance to ambient; no integral ESD diode | Preferred where higher VDS margin or isolated tab is required; requires external gate protection |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(ON), TO-220 package (drain tab) | Slightly higher RDS(ON); no specified avalanche energy rating; legacy planar process | Suitable for cost-sensitive, non-automotive designs where 4 mΩ higher on-resistance is acceptable |
Compared with STP55NF06L and IRFZ44NPBF, the BUK7524-55 offers superior ESD robustness and verified avalanche capability-critical for automotive transients-while maintaining competitive RDS(ON) and thermal performance in standard TO220AB mounting.
Availability
BUK7524-55 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and LED lighting systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned reliability.
Supply support for BUK7524-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK7524-55 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for robustness in automotive and industrial switching applications where gate drive simplicity, thermal resilience, and transient immunity are essential.
FAQ
What is the maximum gate-source voltage rating for the BUK7524-55?
The BUK7524-55 has a maximum gate-source voltage rating of ±16 V. Exceeding this value risks permanent gate oxide damage. Designers should ensure gate drive circuits clamp VGS within this range, especially during switching transients or when using bootstrap configurations. The BUK7524-55 gate threshold voltage is 2.0–4.0 V at 25 °C, making it compatible with standard 10 V logic-level drivers.
Can the BUK7524-55 be used in high-temperature environments like under-hood automotive applications?
Yes, the BUK7524-55 supports junction temperatures up to 175 °C and storage temperatures from –55 °C to +175 °C. Its RDS(ON) increases predictably with temperature (normalized to 25 °C), and thermal resistance junction-to-mounting-base is specified at 1.45 K/W max. When mounted on an appropriately sized heatsink, the BUK7524-55 meets requirements for under-hood engine control modules and body electronics.
Does the BUK7524-55 have a built-in body diode, and what are its key characteristics?
Yes, the BUK7524-55 includes an integral body diode with forward voltage of 0.95–1.2 V at 25 A and reverse recovery time of 40 ns under specified test conditions (IF = 40 A, –dIF/dt = 100 A/µs). Its reverse recovery charge is 0.07 µC typical. These parameters make the BUK7524-55 suitable for freewheeling and synchronous rectification where low Qrr reduces switching losses.
What is the avalanche energy rating of the BUK7524-55, and how is it tested?
The BUK7524-55 is rated for 80 mJ of non-repetitive unclamped inductive turn-off energy (WDSS) at Tmb = 25 °C, ID = 40 A, VDD ≤ 25 V, VGS = 10 V, and RGS = 50 Ω. This rating is validated per the test circuit shown in Figure 16 of the datasheet and confirms ruggedness against inductive kickback in motor and solenoid drives. The BUK7524-55 does not specify repetitive avalanche capability.
Is the BUK7524-55 pin-compatible with other TO220AB MOSFETs, and what precautions apply to its mounting tab?
The BUK7524-55 uses standard TO220AB (SOT78) pinout: pin 1 = gate, pin 2 = drain, pin 3 = source, with the metal tab electrically connected to pin 2 (drain). While mechanically compatible with TO220AB footprints, electrical isolation of the tab must be verified per circuit topology-e.g., insulating washers are required if the heatsink is grounded. Unlike TO-220FP variants, the BUK7524-55 tab is not isolated.
BUK7524-55,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 103W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK7524-55,127 FAQ
1.How can I place an order for BUK7524-55,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7524-55,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7524-55,127 reliable?
The price and inventory of BUK7524-55,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7524-55,127 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK7524-55,127?
For technical support, including BUK7524-55,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7524-55,127 requirements.
6.How does Aetrix verify that BUK7524-55,127 is sourced from the original manufacturer or authorized distributors?
All BUK7524-55,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7524-55,127 meets industry standards.
7.What is the process for return or replacement of BUK7524-55,127?
All BUK7524-55,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7524-55,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7524-55,127 part is unused and in its original packaging.
Return procedure for BUK7524-55,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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