NXP Semiconductors BUK7524-55A,127

Overview

BUK7524-55A from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT78 (TO-220AB) package, designed for high-current 12 V/24 V automotive and industrial switching. It delivers 47 A DC drain current at 10 V gate drive, 20 mΩ typical R_DS(on) at 25 °C, and 175 °C junction-rated operation with Q101 automotive qualification.

For engineers reviewing the BUK7524-55A datasheet, BUK7524-55A pinout, BUK7524-55A application, or BUK7524-55A equivalent, key selection criteria include its 55 V V_DS, low thermal resistance (1.4 K/W j-to-mb), avalanche ruggedness (76 mJ), and standard-level gate drive compatibility with 4.5 V threshold voltage.

Technical Context

This discrete power MOSFET uses TrenchMOS™ technology to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 188 A pulsed drain current and 106 W total power dissipation at T_mb = 25 °C. Its gate-source threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C.

The device integrates a source-drain diode with 0.85 V forward voltage at 25 A and 49 ns reverse recovery time, enabling efficient freewheeling in inductive loads like motors and solenoids. Thermal design is supported by validated transient impedance curves and 1.4 K/W junction-to-mounting-base resistance.

Key Specifications

Pinout & Package

SOT78 (TO-220AB) plastic single-ended package with isolated mounting base electrically connected to drain; 3-lead through-hole format optimized for vertical heatsink mounting and manual or wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with STP48NF55 and IRFZ44NPBF, the BUK7524-55A provides certified automotive reliability, superior thermal performance via direct drain-to-mounting-base conduction, and tighter R_DS(on) tolerance - making it optimal for production-grade 12 V/24 V power switching where safety and longevity are critical.

Availability

BUK7524-55A is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, LED lighting power stages, and power distribution units requiring stable component supply across extended product lifecycles.

Supply support for BUK7524-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK7524-55A belongs to Nexperia's TrenchMOS™ standard-level power MOSFET family, engineered specifically for robust, high-current switching in 12 V and 24 V automotive and industrial systems where reliability and thermal performance are paramount.

FAQ

What is the maximum continuous drain current for BUK7524-55A at 100 °C mounting base temperature?

The BUK7524-55A supports 33 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints of the SOT78 package and must be applied when heatsink temperature exceeds 25 °C. The BUK7524-55A datasheet Figure 2 provides normalized current curves for precise thermal design.

Is BUK7524-55A pin-compatible with other TO-220AB MOSFETs like IRFZ44N?

Yes, the BUK7524-55A uses standard SOT78 (TO-220AB) pinout: Pin 1 = Gate, Pin 2 = Drain (mounting base), Pin 3 = Source. This matches IRFZ44N and most industry-standard TO-220AB power MOSFETs. However, the BUK7524-55A mounting base is electrically connected to drain, so PCB layout must isolate the heatsink from source ground - unlike isolated-tab variants.

Does BUK7524-55A require a gate driver IC for microcontroller interfacing?

No, the BUK7524-55A is a standard-level MOSFET with V_GS(th) of 2–4 V and full enhancement at 4.5–10 V, making it directly drivable by 5 V microcontrollers (e.g., STM32, PIC, AVR) without external level shifting. For high-frequency PWM (>50 kHz), a low-impedance gate driver is recommended to minimize switching losses, but it is not mandatory for basic ON/OFF control.

What is the avalanche ruggedness rating of BUK7524-55A and how is it tested?

The BUK7524-55A has a non-repetitive avalanche energy rating (W_DSS) of 76 mJ, measured under unclamped inductive load conditions: I_D = 39 A, V_DS ≤ 55 V, V_GS = 10 V, R_GS = 50 Ω, starting at T_mb = 25 °C. This rating confirms robustness against inductive kickback in motor and solenoid applications - a key differentiator versus non-avalanche-rated MOSFETs.

How does the thermal resistance of BUK7524-55A compare between junction-to-ambient and junction-to-mounting-base?

The BUK7524-55A has R_th(j-a) = 60 K/W (vertical still air) and R_th(j-mb) = 1.4 K/W. The 43× lower junction-to-mounting-base resistance highlights its design intent: effective thermal transfer requires direct metal-to-metal contact between the mounting base (drain) and an external heatsink. Relying on ambient convection alone results in severe derating - the BUK7524-55A must be heatsink-mounted for rated current operation.