NXP Semiconductors BUK752R3-40C,127

Overview

BUK752R3-40C from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in TO-220AB (SOT78A) package, designed for automotive 12V load switching. It delivers 100 A continuous drain current at 25 °C mounting base temperature, features 2.3 mΩ maximum R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 175 °C junction operation, and withstands 40 V drain-source voltage - enabling robust control of motors, lamps, and solenoids in engine compartments.

For engineers reviewing the BUK752R3-40C datasheet, BUK752R3-40C pinout, BUK752R3-40C application, or BUK752R3-40C equivalent, this page provides verified technical context, thermal performance data, avalanche energy rating (1.2 J), gate charge (175 nC), and validated alternatives for high-reliability automotive power design.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness. Its standard-level gate drive (V_GS(th) = 2–4 V) enables direct interface with 5 V/3.3 V microcontrollers without level-shifting, while its 0.45 K/W junction-to-mounting-base thermal resistance ensures efficient heat transfer to external heatsinks.

The MOSFET supports unclamped inductive switching with 1.2 J non-repetitive avalanche energy at 100 A and 40 V supply. Its dynamic characteristics include 67 nC gate-drain charge and 133 ns rise time, making it suitable for high-frequency PWM in motor control and DC-DC conversion stages.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Dimensions: 15.8 × 10.3 × 4.5 mm (L × W × H), 1 mounting hole, 3 leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N4F6 and IRF1404ZLPBF, BUK752R3-40C uniquely combines AEC-Q101 qualification, 0.45 K/W thermal resistance, and 1.2 J avalanche energy in a TO-220AB package - making it the only option among the three validated for under-hood automotive solenoid and motor control with zero layout compromise.

Availability

BUK752R3-40C is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and body electronics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BUK752R3-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on high-volume, high-reliability components for automotive, industrial, and computing markets.

BUK752R3-40C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust 12V load switching in harsh environments - emphasizing AEC-Q101 compliance, thermal resilience, and avalanche ruggedness over generic switching performance.

FAQ

What is the maximum junction temperature rating for BUK752R3-40C?

The BUK752R3-40C has a maximum junction temperature (T_j) rating of 175 °C, confirmed in Table 4 (Limiting Values) of its datasheet. This rating enables operation in high-ambient automotive environments such as engine bays, and is supported by its 175 °C storage temperature limit and thermal characterization up to that temperature. The BUK752R3-40C maintains specified R_DS(on) and avalanche performance within this full range.

Is BUK752R3-40C pin-compatible with other TO-220AB N-channel MOSFETs?

BUK752R3-40C uses standard TO-220AB (SOT78A) pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, with the mounting base electrically connected to the drain. While physical footprint matches industry-standard TO-220AB devices, electrical compatibility depends on R_DS(on), gate charge, and avalanche rating - not just pin count or position. The BUK752R3-40C should not be assumed drop-in without verifying these parameters against the target replacement.

Does BUK752R3-40C require a gate resistor for automotive applications?

Yes - a gate resistor is recommended for BUK752R3-40C to control dV/dt and prevent oscillation during switching. The datasheet specifies test conditions with R_G(ext) = 10 Ω for timing measurements (e.g., t_d(on), t_r). For automotive PWM at 10–50 kHz, a 10–47 Ω series resistor is typical; lower values increase switching speed but risk EMI and shoot-through, especially with fast microcontroller outputs driving the BUK752R3-40C gate.

What is the avalanche energy rating of BUK752R3-40C and how is it tested?

The BUK752R3-40C is rated for 1.2 J non-repetitive drain-source avalanche energy (E_DS(AL)S), measured under conditions of I_D = 100 A, V_sup ≤ 40 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C in unclamped inductive switching. This value is confirmed in Table 1 (Quick reference) and Table 4 (Limiting values). It reflects single-pulse robustness - not repetitive operation - and is validated per AEC-Q101 stress requirements.

Can BUK752R3-40C be used in high-side switching configurations?

BUK752R3-40C is an N-channel MOSFET optimized for low-side switching due to its standard-level gate drive and TO-220AB package where the mounting base connects to drain. High-side use requires a gate voltage ≥ V_DS + V_GS(th), typically needing a charge pump or bootstrap circuit. While possible, it adds complexity - the BUK752R3-40C datasheet does not characterize or recommend high-side operation, and its thermal path assumes drain-to-heatsink mounting, which conflicts with most high-side layouts.