My Inquiry
My Account
NXP Semiconductors BUK752R7-30B,127
- Part No.:
- BUK752R7-30B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK752R7-30B,127.pdf
- Description:
- MOSFET N-CH 30V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,991
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK752R7-30B from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 2.3 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for automotive 12 V load switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK752R7-30B datasheet, BUK752R7-30B pinout, BUK752R7-30B application, or BUK752R7-30B equivalent, key selection criteria include its low on-resistance, avalanche ruggedness (2.3 J), gate-drive compatibility with standard 10 V logic, and thermal resistance of 0.5 K/W from junction to mounting base.
Technical Context
This device uses TrenchMOS technology to achieve low conduction losses and high thermal robustness. Its gate threshold voltage ranges from 1 V to 4.4 V across -55 °C to 175 °C, enabling stable turn-on behavior in wide-temperature automotive systems.
The MOSFET features an integrated source-drain diode with 0.85 V typical forward voltage at 40 A and 25 °C, and exhibits 88 ns reverse recovery time under defined test conditions. Its dynamic parameters - including 91 nC total gate charge and 29 nC gate-drain charge - support efficient high-frequency switching in motor and solenoid drive circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 12 V automotive systems with margin against load-dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capability, not die. |
| RDS(on) | 2.3 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1.5 W conduction loss at 25 A. |
| EAS | 2.3 J non-repetitive avalanche energy - provides robustness against inductive switching stress without external snubbers. |
| Tj max | 175 °C - allows operation in engine bay or under-hood locations without derating at elevated ambient. |
| Rth(j-mb) | 0.5 K/W - enables high-power dissipation when mounted to heatsink via metal mounting base. |
| QG(tot) | 91 nC - determines gate driver strength requirement for <100 ns switching transitions at 25 A. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal mounting base connected to drain; 3-lead configuration with standardized lead spacing and one mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≥10 V drive for full enhancement; gate leakage <100 nA ensures low standby current. |
| 2 (D) | Drain | Main power output terminal; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits. |
| 3 (S) | Source | Power return path; referenced to gate drive; internal source inductance 7.5 nH affects high-speed switching ringing. |
| Mounting base (mb) | Drain connection | Integral metal surface bonded to drain; primary thermal path - requires thermal interface material and mechanical fastening for optimal Rth(j-mb). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| 175 °C junction rating | Enables direct placement in high-ambient zones (e.g., near exhaust, battery, or alternator) without external cooling augmentation. |
| Low RDS(on) (2.3 mΩ typ) | Reduces conduction losses by >30% vs. comparable 30 V MOSFETs, improving efficiency in 12 V battery-fed loads. |
| Standard-level gate drive | Operates fully enhanced with 10 V logic-compatible drivers - eliminates need for level-shifters or charge pumps in MCU-based designs. |
| Unclamped avalanche rated | Withstands 2.3 J single-pulse inductive energy - protects against flyback voltage spikes in relay, solenoid, and motor commutation. |
Applications
| Automotive Body Control Module | 12 V DC Motor Drive |
|---|---|
Use Scenario: Switching power to door locks, window lifts, and seat adjusters in modern BCMs. IC Role / Device Role / Timing Role: High-current power switch controlling 12 V inductive loads with PWM or on/off duty cycles. Use Value: Low RDS(on) minimizes heat generation during frequent actuation; 175 °C rating ensures reliability in sealed module enclosures. |
Use Scenario: Driving brushed DC motors in HVAC blowers, radiator fans, and power steering assist modules. IC Role / Device Role / Timing Role: Main H-bridge or half-bridge low-side switch handling bidirectional current up to 75 A peak. Use Value: Avalanche ruggedness absorbs back-EMF during rapid deceleration; QG and QGD values enable clean 20 kHz PWM switching. |
| Truck/Commercial Vehicle Lighting | Industrial Solenoid Actuation |
Use Scenario: Controlling high-power LED headlamps and auxiliary lighting in heavy-duty vehicles. IC Role / Device Role / Timing Role: Constant-current or PWM-controlled high-side or low-side switch managing 30–60 A loads. Use Value: Mounting base thermal path sustains continuous operation under prolonged illumination; VGS(th) stability ensures consistent turn-on across temperature extremes. |
Use Scenario: Energizing hydraulic or pneumatic solenoids in agricultural machinery, construction equipment, and factory automation. IC Role / Device Role / Timing Role: Robust power switch delivering pulsed 75 A currents with fast turn-off to prevent coil saturation. Use Value: 967 A peak drain current rating accommodates solenoid inrush; low gate charge enables precise timing control with microsecond resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF30L | 30 V, 75 A, RDS(on) = 3.5 mΩ typ; TO-220FP package (no mounting base); lower avalanche rating (1.8 J). | Lacks integral heatsink-mounting base; higher RDS(on) increases conduction loss by ~50% at 25 A. | Choose only if board-level heatsinking suffices and avalanche margin is secondary. |
| IRF1404ZPBF | 40 V, 202 A, RDS(on) = 3.8 mΩ typ; TO-220AB package; not AEC-Q101 qualified; Tj max = 175 °C. | Higher voltage rating adds cost and capacitance; no automotive qualification limits use in safety-critical systems. | Select only for non-automotive industrial applications requiring >30 V margin or higher peak current. |
Compared with STP75NF30L and IRF1404ZPBF, the BUK752R7-30B delivers superior thermal performance via its dedicated mounting base, tighter RDS(on) tolerance, and certified automotive robustness - making it the preferred choice where reliability, thermal management, and qualification compliance are mandatory.
Availability
BUK752R7-30B is available at Aetrix Electronics and suitable for automotive body electronics, 12 V motor control, and industrial solenoid actuation requiring stable component supply and long-term lifecycle assurance.
Supply support for BUK752R7-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, and consumer markets.
The BUK752R7-30B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for high-reliability 12 V load switching in harsh thermal and electrical environments.
FAQ
What is the maximum continuous drain current rating for BUK752R7-30B?
The BUK752R7-30B has a maximum continuous drain current of 75 A at mounting base temperature (Tmb) = 25 °C, as limited by the TO-220AB package thermal capability. At Tmb = 100 °C, this rating drops to 75 A due to thermal derating curves shown in Figure 1 of the datasheet. The silicon die supports higher current, but package constraints define the usable limit.
Is BUK752R7-30B suitable for automotive applications?
Yes, the BUK752R7-30B is AEC-Q101 qualified and explicitly designed for automotive critical applications. It meets the stress-test requirements for temperature cycling, humidity, and mechanical shock, and is rated for operation from -55 °C to +175 °C junction temperature - making it appropriate for engine control units, body control modules, and ADAS power stages.
What is the gate threshold voltage range of BUK752R7-30B over temperature?
The BUK752R7-30B gate-source threshold voltage (VGS(th)) ranges from 1 V (min) at Tj = 175 °C to 4.4 V (max) at Tj = -55 °C, with a typical value of 3 V at 25 °C. This wide range ensures reliable turn-on across automotive operating temperatures while maintaining noise immunity at cold start.
Does BUK752R7-30B have an integrated body diode, and what are its characteristics?
Yes, the BUK752R7-30B includes an integrated source-drain diode with 0.85 V typical forward voltage at IS = 40 A and Tj = 25 °C. Its reverse recovery time is 88 ns under specified test conditions (IS = 20 A, dI/dt = -100 A/µs), and recovered charge is 132 nC - enabling use in freewheeling and synchronous rectification roles without external diodes in many 12 V designs.
How does the mounting base of BUK752R7-30B connect electrically and thermally?
The mounting base of the BUK752R7-30B is electrically connected to the drain terminal and serves as the primary thermal conduction path from junction to heatsink. With Rth(j-mb) = 0.5 K/W, effective thermal management requires mechanical fastening and thermal interface material. Electrical isolation from the heatsink is mandatory unless the system design intentionally references drain to chassis ground.
BUK752R7-30B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6212 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK752R7-30B,127 FAQ
1.How can I place an order for BUK752R7-30B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK752R7-30B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK752R7-30B,127 reliable?
The price and inventory of BUK752R7-30B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK752R7-30B,127 is usually 5 days.
3.What payment methods are accepted for BUK752R7-30B,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK752R7-30B,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK752R7-30B,127?
BUK752R7-30B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK752R7-30B,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK752R7-30B,127?
For technical support, including BUK752R7-30B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK752R7-30B,127 requirements.
6.How does Aetrix verify that BUK752R7-30B,127 is sourced from the original manufacturer or authorized distributors?
All BUK752R7-30B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK752R7-30B,127 meets industry standards.
7.What is the process for return or replacement of BUK752R7-30B,127?
All BUK752R7-30B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK752R7-30B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK752R7-30B,127 part is unused and in its original packaging.
Return procedure for BUK752R7-30B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK752R7-30B,127 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
