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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK753R1-40E,127

Name: BUK753R1-40E,127
Brand: Nexperia USA Inc.
SKU: BUK753R1-40E,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK753R1-40E,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK753R1-40E,127.pdf

Description:: MOSFET N-CH 40V 100A TO220AB

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Product details

Overview

BUK753R1-40E from Nexperia is a standard-level N-channel TrenchMOS power FET in TO-220AB (SOT78A) package, rated for 40 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 2.6 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-current, thermally robust switching element in automotive power distribution and motor control circuits.

For engineers reviewing the BUK753R1-40E datasheet, BUK753R1-40E pinout, BUK753R1-40E application, or BUK753R1-40E equivalent, key selection criteria include its AEC Q101 qualification, 175 °C junction rating, repetitive avalanche capability, and true standard-level gate drive compatibility with 12 V microcontroller outputs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (Q_G(tot) = 79 nC, Q_GD = 22 nC). Its thermal design centers on direct die-to-mounting-base conduction, delivering R_th(j-mb) = 0.64 K/W for efficient heatsink coupling.

The device features a fully rated source-drain diode (V_SD = 0.82 V at I_S = 25 A, T_j = 25 °C) and supports unclamped inductive switching with E_AS = 419 mJ at T_j(init) = 25 °C - critical for solenoid and transmission valve drivers where freewheeling energy must be safely absorbed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe blocking voltage in 12 V automotive systems with load-dump transients up to 40 V.
R_DS(on)	2.6 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink size.
I_D (cont)	100 A @ T_mb = 25 °C - limited by TO-220AB package thermal capacity, not silicon, enabling high-current switching without paralleling.
Q_GD	22 nC - determines Miller plateau duration during switching; enables clean turn-off under high dV/dt conditions in motor drives.
T_j max	175 °C - allows operation in engine bay environments without derating below full current at mounting base temperatures up to 100 °C.
E_AS	419 mJ - specifies single-pulse avalanche energy handling, supporting reliable operation in inductive load switching without external snubbers.
V_GS(th)	≥1 V @ T_j = 175 °C - ensures gate turn-on remains functional across full automotive temperature range using standard 5 V or 12 V logic.

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted metal mounting base electrically connected to the drain terminal. The package features three leads and one mounting hole for mechanical stability and optimal thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level MOSFET gate input; requires ≥1 V threshold margin at 175 °C; compatible with 5 V/12 V MCU GPIOs.
2 (D)	Drain	Main high-side or low-side power path terminal; internally bonded to mounting base for lowest possible R_th(j-mb).
3 (S)	Source	Power return path and reference for gate drive; isolated from mounting base to enable high-side switch configuration.
Mounting Base (mb)	Drain (electrically tied)	Primary thermal interface; must be mounted to heatsink with thermal compound; contributes no additional electrical isolation.

Key Features

Feature	Design Value
AEC Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - required for engine control, transmission, and ADAS power stages.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching events without degradation - eliminates need for external clamping diodes in solenoid drivers.
175 °C junction rating	Enables full 100 A current capability at mounting base temperatures up to 100 °C - suitable for under-hood applications without forced air cooling.
True standard-level gate	V_GS(th) ≥1 V at 175 °C ensures consistent turn-on with 5 V logic and avoids false triggering in noisy automotive environments.
Low R_DS(on) × Q_G figure of merit	2.6 mΩ × 79 nC = 205 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor control stages.

Applications

Engine Start-Stop Control

Transmission Solenoid Driver

Use Scenario: High-current engagement/disengagement of starter motor and belt-driven alternator in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side power switch controlling battery-to-starter path; handles 100 A peak pulses with <10 µs turn-off to prevent back-EMF damage.

Use Value: Repetitive avalanche rating absorbs inductive kickback without snubber components; 175 °C rating sustains operation during extended cranking cycles.

Use Scenario: Precise PWM-controlled current delivery to hydraulic solenoids regulating gear shift timing and pressure in automatic transmissions.

IC Role / Device Role / Timing Role: High-side or low-side switching element in closed-loop current driver; operates at 1–10 kHz with tight duty-cycle control.

Use Value: Low R_DS(on) minimizes resistive heating during sustained 5–15 A solenoid hold current; fast Q_GD-limited switching enables accurate current shaping.

12 V Power Distribution Unit

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Solid-state replacement of mechanical relays in centralized vehicle power routing modules.

IC Role / Device Role / Timing Role: Load switch managing up to 80 A per channel for lighting, HVAC, and infotainment subsystems.

Use Value: AEC Q101 qualification ensures long-term reliability under vibration and thermal cycling; mounting base connection simplifies thermal management in dense PCB layouts.

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters requiring high peak current and low conduction loss.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter topology; commutates up to 75 A peak with minimal switching loss.

Use Value: 2.6 mΩ R_DS(on) reduces I²R loss during high-torque assist; 0.64 K/W R_th(j-mb) enables direct heatsink mounting for compact module integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.7 mΩ @ 10 V, but requires 4.5 V gate drive minimum; not AEC Q101 qualified.	Higher current capability but lacks automotive qualification; suited for industrial motor drives, not safety-critical automotive functions.	Select only for non-automotive applications where higher peak current and lower R_DS(on) outweigh qualification requirements.
IRF1404ZPBF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V; legacy planar MOSFET; no AEC Q101 or avalanche rating.	Larger die area increases gate charge (Q_G = 133 nC); slower switching and higher thermal resistance limit use in high-frequency EPS or start-stop.	Consider only for cost-sensitive, low-frequency (<1 kHz), non-automotive 12 V switching where qualification and efficiency are secondary.

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK753R1-40E uniquely combines AEC Q101 compliance, 175 °C operation, and verified repetitive avalanche performance - making it the only viable choice for production automotive power switching where functional safety and thermal resilience are mandatory.

Availability

BUK753R1-40E is available at Aetrix Electronics and suitable for automotive power distribution, transmission control, and start-stop micro-hybrid systems requiring stable component supply and long-term lifecycle support.

Supply support for BUK753R1-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

The BUK753R1-40E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding 12 V vehicle subsystems requiring AEC Q101 reliability and robust avalanche behavior.

FAQ

Is BUK753R1-40E suitable for high-side switching configurations?

Yes - the TO-220AB package isolates the source lead (Pin 3) from the mounting base, which is tied to drain (Pin 2). This allows implementation as a high-side switch when the source is connected to the load and the drain to the supply rail, provided gate drive voltage exceeds V_DS + V_GS(th). Gate drive circuitry must accommodate floating reference.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is 100 A at T_mb = 25 °C and remains at 100 A up to T_mb = 100 °C due to thermal derating curve flattening - this reflects package-limited current rather than silicon limitation, confirmed by the "capped at 120 A due to package" note.

Does BUK753R1-40E require external gate resistors for automotive EMI compliance?

Yes - while the device supports fast switching (t_f = 32 ns), uncontrolled edge rates can cause radiated emissions. A 5 Ω external gate resistor is used in the datasheet's SOA test condition (Fig. 4), and typical designs employ 4.7–10 Ω to balance EMI suppression against switching loss, especially in EPS and transmission control modules.

Can the source-drain body diode handle reverse recovery in PWM motor control?

Yes - the diode exhibits t_rr = 38.8 ns and Q_r = 44.6 nC at I_S = 20 A, dI/dt = −100 A/µs, making it suitable for synchronous rectification and freewheeling in 12 V motor drives. However, its softness and low V_SD (0.82 V) reduce switching loss compared to discrete Schottky alternatives.

BUK753R1-40E,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK753R1-40E,127 FAQ

1.How can I place an order for BUK753R1-40E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK753R1-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK753R1-40E,127 reliable?

The price and inventory of BUK753R1-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK753R1-40E,127 is usually 5 days.

3.What payment methods are accepted for BUK753R1-40E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK753R1-40E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK753R1-40E,127?

BUK753R1-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK753R1-40E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK753R1-40E,127?

For technical support, including BUK753R1-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK753R1-40E,127 requirements.

6.How does Aetrix verify that BUK753R1-40E,127 is sourced from the original manufacturer or authorized distributors?

All BUK753R1-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK753R1-40E,127 meets industry standards.

7.What is the process for return or replacement of BUK753R1-40E,127?

All BUK753R1-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK753R1-40E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK753R1-40E,127 part is unused and in its original packaging.

Return procedure for BUK753R1-40E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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