NXP Semiconductors BUK753R4-30B,127
- Part No.:
- BUK753R4-30B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK753R4-30B,127.pdf
- Description:
- MOSFET N-CH 30V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,342
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Product details
Overview
BUK753R4-30B from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 30 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 2.9 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for automotive 12 V power switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK753R4-30B datasheet, BUK753R4-30B pinout, BUK753R4-30B application, or BUK753R4-30B equivalent, this page delivers verified electrical specs, thermal resistance (Rth(j-mb) = 0.59 K/W), avalanche energy rating (1.3 J unclamped), gate charge (QG(tot) = 75 nC), and automotive-grade reliability context - all critical for motor, lamp, and solenoid control design validation.
Technical Context
This device employs TrenchMOS technology to achieve low on-resistance and high current capability in a standard-level gate drive configuration (VGS(th) = 2–4 V, typ. 3 V). Its thermal design centers on direct die-to-mounting-base conduction (Rth(j-mb) = 0.59 K/W), enabling high-power dissipation (Ptot = 255 W at Tmb = 25 °C) when heatsink-mounted.
The BUK753R4-30B integrates an intrinsic body diode with VSD = 0.85–1.2 V at IS = 25 A and trr = 70 ns, supporting freewheeling in inductive loads. Its dynamic characteristics include QGD = 23 nC and Ciss = 3713–4951 pF, defining switching speed and gate driver sizing requirements for automotive PWM applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe operating voltage ceiling for 12 V automotive systems with load dump margin. |
| ID (continuous) | 75 A at Tmb = 25 °C - supports high-current 12 V loads like starter relays or HVAC blowers without derating at board level. |
| RDS(on) | 2.9 mΩ typ. at VGS = 10 V, Tj = 25 °C - enables <1.5 W conduction loss at 25 A, reducing thermal stress in compact layouts. |
| Ptot | 255 W at Tmb = 25 °C - requires mechanical mounting to heatsink; usable only with effective thermal interface and baseplate cooling. |
| Rth(j-mb) | 0.59 K/W - confirms efficient heat transfer from junction to heatsink, critical for sustained operation at 175 °C Tj. |
| EAS | 1.3 J unclamped avalanche energy - provides robustness against inductive kickback in motor/solenoid switching without external snubbers. |
| QG(tot) | 75 nC - determines gate driver current requirement (~7.5 mA avg. for 1 µs turn-on); impacts switching loss and EMI profile. |
Pinout & Package
Package: TO-220AB (SOT78A) - plastic single-ended package with heatsink-mounted mounting base electrically connected to drain; 3-lead configuration with 1 mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts standard 10 V logic-level drive; threshold voltage 2–4 V ensures compatibility with 5 V/3.3 V microcontrollers via level-shifting or buffer. |
| 2 (D) | Drain | Main high-side power path; electrically tied to mounting base - must be isolated from chassis unless system ground reference permits. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configurations; internal source inductance (LS = 7.5 nH) affects high-speed switching stability. |
| Mounting base (mb) | Drain connection | Integral part of drain terminal; provides primary thermal path to heatsink; requires insulated mounting hardware if drain is not at chassis potential. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, braking, and ADAS subsystems per stress test requirements. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments (e.g., near exhaust manifolds or turbochargers) without thermal shutdown or parameter drift. |
| TrenchMOS technology | Delivers lower RDS(on) per die area vs. planar MOSFETs, improving power density and reducing PCB footprint for high-current designs. |
| Unclamped avalanche rating | 1.3 J energy handling allows reliable operation during inductive load interruption without external protection components. |
| Standard-level gate drive | Operates with 10 V gate drive - compatible with common automotive MCU GPIOs and discrete driver ICs without requiring dedicated high-voltage gate drivers. |
Applications
| Automotive Lamp Control | Engine Cooling Fan Drive |
|---|---|
|
Use Scenario: Switching 12 V halogen or LED headlamps, fog lamps, and interior lighting in modern vehicle architectures. IC Role / Device Role / Timing Role: Low-side power switch controlling lamp current; handles PWM dimming up to 2 kHz with minimal conduction loss. Use Value: 2.9 mΩ RDS(on) limits I²R heating at 10–15 A lamp currents, enabling compact heatsink-free designs for space-constrained lamp modules. |
Use Scenario: Driving brushed DC cooling fans in ICE and hybrid powertrains where duty cycle and ambient temperature vary widely. IC Role / Device Role / Timing Role: High-current, thermally robust power switch interfacing between MCU PWM output and fan motor winding. Use Value: 175 °C Tj rating and 75 A current capacity ensure stable operation during prolonged full-load fan runs in hot under-hood conditions. |
| Fuel Injector Driver | Transmission Solenoid Control |
|
Use Scenario: Direct driving of low-impedance fuel injectors (typically 2–5 Ω) in gasoline direct injection (GDI) systems. IC Role / Device Role / Timing Role: Fast-switching low-side switch managing precise injector pulse widths (0.5–4 ms) with minimal delay (<120 ns total switching time). Use Value: 71 ns fall time and 23 nC QGD support accurate fuel metering across engine RPM range while minimizing switching losses. |
Use Scenario: Controlling hydraulic pressure solenoids in automatic transmissions requiring high peak current (up to 75 A) and fast response. IC Role / Device Role / Timing Role: Robust power switch delivering pulsed current to solenoid coils with strict timing accuracy and thermal resilience. Use Value: 1.3 J avalanche energy rating absorbs back-EMF spikes during rapid solenoid deactivation, eliminating need for external flyback diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF30 | 30 V, 75 A, RDS(on) = 4.5 mΩ (typ.), TO-220FP package, non-AEC-Q101 rated | Lacks automotive qualification; higher RDS(on) increases conduction loss by ~55% at 25 A | Acceptable for non-safety-critical industrial 12 V switching where AEC compliance is not required. |
| IRF3205PBF | 55 V, 110 A, RDS(on) = 8.0 mΩ (typ.), TO-220AB, non-AEC-Q101 rated | Higher voltage rating but significantly higher on-resistance and no automotive qualification | Only suitable as a drop-in replacement if system overvoltage margin exceeds 55 V and thermal budget allows +175% conduction loss. |
Compared with STP75NF30 and IRF3205PBF, the BUK753R4-30B offers lower RDS(on), guaranteed AEC-Q101 compliance, and optimized thermal resistance - making it the only choice for production automotive applications requiring validated reliability and thermal performance at 12 V.
Availability
BUK753R4-30B is available at Aetrix Electronics and suitable for automotive lamp control, engine cooling fan drive, and transmission solenoid control requiring stable component supply across extended vehicle lifecycles.
Supply support for BUK753R4-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK753R4-30B belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability 12 V power switching in harsh under-hood environments with emphasis on thermal robustness and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current rating for BUK753R4-30B?
The BUK753R4-30B has a maximum continuous drain current of 75 A at mounting base temperature (Tmb) = 25 °C, as specified in Table 1 and Table 4 of its datasheet. This rating is limited by package thermal constraints - current must be derated linearly as Tmb rises, reaching zero at approximately 100 °C. The BUK753R4-30B maintains safe operation up to 175 °C junction temperature, making it suitable for high-ambient automotive applications.
Is BUK753R4-30B qualified for automotive use?
Yes, the BUK753R4-30B is explicitly AEC-Q101 qualified, as stated in section 1.2 "Features and benefits" of its product data sheet. It was designed and tested to meet the stress test requirements for automotive-grade discrete semiconductors, including temperature cycling, humidity bias, and high-temperature operating life - confirming its suitability for safety-critical vehicle systems such as engine management, lighting, and transmission control.
What is the thermal resistance from junction to mounting base for BUK753R4-30B?
The thermal resistance from junction to mounting base (Rth(j-mb)) for the BUK753R4-30B is 0.59 K/W, per Table 5 in the datasheet. This value reflects the dominant thermal path when the device is mounted to a heatsink via its electrically connected mounting base. It enables calculation of junction temperature rise (ΔTj = Pdiss × 0.59) and is essential for thermal design validation of the BUK753R4-30B in automotive power modules.
Does BUK753R4-30B have avalanche capability?
Yes, the BUK753R4-30B features a specified non-repetitive drain-source avalanche energy rating of 1.3 J under defined test conditions (ID = 75 A, Vsup ≤ 30 V, RGS = 50 Ω, VGS = 10 V, Tj(init) = 25 °C, unclamped). This ruggedness allows the BUK753R4-30B to safely absorb inductive energy spikes during switching of motors, solenoids, and relays without external protection components.
What is the gate-source threshold voltage range for BUK753R4-30B?
The gate-source threshold voltage (VGS(th)) for the BUK753R4-30B ranges from 2 V (min) to 4 V (max) at Tj = 25 °C, with a typical value of 3 V, as shown in Table 6. At extreme temperatures, it varies from 1 V (min) at Tj = 175 °C to 4.4 V (max) at Tj = −55 °C. This standard-level threshold ensures reliable turn-on with 5 V or 10 V gate drive while maintaining noise immunity in automotive electrical environments.
BUK753R4-30B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4951 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 255W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK753R4-30B,127 FAQ
1.How can I place an order for BUK753R4-30B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK753R4-30B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK753R4-30B,127 reliable?
The price and inventory of BUK753R4-30B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK753R4-30B,127 is usually 5 days.
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BUK753R4-30B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
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5.How can I obtain technical support or documentation for BUK753R4-30B,127?
For technical support, including BUK753R4-30B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK753R4-30B,127 requirements.
6.How does Aetrix verify that BUK753R4-30B,127 is sourced from the original manufacturer or authorized distributors?
All BUK753R4-30B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK753R4-30B,127 meets industry standards.
7.What is the process for return or replacement of BUK753R4-30B,127?
All BUK753R4-30B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK753R4-30B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK753R4-30B,127 part is unused and in its original packaging.
Return procedure for BUK753R4-30B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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